K6X1008C2D-TF55 vs K6X1008C2D-BF55 Comparaison
Comparaison détaillée côte à côte de K6X1008C2D-TF55 par Samsung Electronics et K6X1008C2D-BF55 par Samsung Electro-Mechanics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Fin de vieSamsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 ObsoleteComparaison des spécifications
| Paramètre | K6X1008C2D-TF55 | K6X1008C2D-BF55 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electro-Mechanics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Fin de vie | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,35 | $1,18 |
| Type de mémoire | SRAM - Asynchronous | Asynchronous CMOS Static RAM (SRAM) |
| Taille de mémoire | 1 Mbit | — |
| Organisation de la mémoire | 128K x 8 | — |
| Access Time (tAA) | 55 ns | — |
| Interface | Parallel | Parallel, asynchronous |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | — |
| Technology | Low Power Full CMOS | — |
| Boîtier | 32-TSOP REVERSE | 32-SOP-525 (SOP-32) |
| Type de montage | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature grade] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | Volatile (SRAM) | — |
| Clock Frequency | N/A (asynchronous) | — |
| Statut RoHS | RoHS: Yes (per distributor listing) | Compliant |
| Memory Organization | — | 128K x 8 bit (1 Mbit) |
| Density | — | 1 Mbit |
| Access Time | — | 55 ns |
| Supply Voltage (VCC) | — | 5 V (single supply) |
| Operating Current (ICC) | — | 30 mA typical |
| Standby Current (ICC2) | — | [DATA_NEEDED: standby current value] |
| Largeur du bus de données | — | 8 bit |
| Address Bus Width | — | 17 bit |
| Data Retention Voltage | — | Low data retention voltage supported |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes (Lead-Free variant) |
| Cell Technology | — | 6T CMOS memory cell |