K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung
Référence : K9DVGB8U5M ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.95 | $4,95 |
| 10 | $4.45 | $44,50 |
| 100 | $3.92 | $392,00 |
| 500 | $3.48 | $1 740,00 |
| 1 000 | $3.05 | $3 050,00 |
K9DVGB8U5M Présentation
NAND Flash is a type of non-volatile memory that retains data without power and is organized as an array of memory cells connected in series, which yields the highest cell density and lowest cost per bit of any solid-state storage technology. Within the memory hierarchy, NAND Flash sits below DRAM and NOR Flash in speed but above them in density, making it the dominant technology for SSDs, eMMC storage, USB drives, memory cards, and embedded mass storage in consumer, industrial, and automotive systems.
Key characteristics of the K9 family include an asynchronous 8-bit data interface, page-based read and program operations, block-based erase architecture, and on-chip status and ID registers accessible via standard command cycles. Samsung K9 NAND devices typically provide spare area per page for ECC parity storage, enabling controller-based error correction to meet target bit error rates over the specified endurance and retention windows.
Technically, K9-series devices rely on a charge-trap or floating-gate cell array with page buffers for read, program, and verify operations. Access is command/address/data multiplexed on the shared I/O bus using CLE, ALE, WE, RE, and CE control signals, which simplifies board routing to a low pin-count interface.
Typical applications include embedded board-level mass storage, solid-state drive controller designs, set-top boxes, industrial data loggers, and networking equipment requiring high-density code and data storage.
A key design consideration is ECC strategy: NAND Flash requires error-correcting code managed by the host controller, and firmware must implement bad-block management and wear leveling.
This page synthesizes verified distributor data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, with pricing referenced as of 2026-09-04.
Alternatives de remplacement direct pour K9DVGB8U5M — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K9DVGB8U5M (même facteur de forme et même empreinte) — différant par Memory Type, Organization, Package, Density, Interface.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K9MDG08U5M
✅ Remplacement direct✓ En stock
$35.5 / unité
Voir la fiche technique →K9PDG08U5M
✅ Remplacement direct✓ En stock
$4.2 / unité
Voir la fiche technique →K9NCG08U5M
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K9LCG08U1M
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$11.85 / unité
Voir la fiche technique →K9HCG08U1M
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9DVGB8U5M Valeurs maximales et caractéristiques électriques
| Type de mémoire | NAND Flash |
| Interface | Asynchronous x8-bit I/O |
| Type de montage | Surface Mount |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) |
Guide de configuration des broches du K9DVGB8U5M standard
Configuration des broches du K9DVGB8U5M (boîtier standard). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K9DVGB8U5M.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K9DVGB8U5M convient pour 6 applications: Embedded Board-Level Mass Storage, Solid-State Drive Data Array, Industrial Data Loggers, Networking Equipment Code and Data Storage, Consumer Electronics Storage (TVs, STBs, Cameras), Automotive Infotainment and Telematics (Design-Level Evaluation).
Embedded Board-Level Mass Storage
The K9DVGB8U5M fits embedded designs that need high-density non-volatile storage on a small footprint, such as industrial gateways, POS terminals, and set-top boxes. Its x8 asynchronous NAND interface is supported by nearly all embedded processors with a NAND flash controller, so bring-up requires only standard CLE/ALE/WE/RE signal wiring. Placed as the primary storage device behind a flash translation layer, the page-based read and program architecture maps efficiently to FTL block mapping. Budget controller resources for ECC computation per page, and reserve spare-area capacity for parity and bad-block replacement to sustain the rated endurance window.
Recommandé
Solid-State Drive Data Array
SSD controllers built around raw NAND arrays use parts like the K9DVGB8U5M as channel-attached die for bulk data storage. The asynchronous 8-bit interface simplifies channel design for cost-optimized drives, and page-program/block-erase granularity aligns with FTL garbage collection. In this role the device's program time per page sets effective channel throughput, so controllers interleave multiple die per channel to hide program and erase latencies. Strong BCH or LDPC ECC must be sized to the process node's raw bit error rate, and wear leveling spreads program/erase cycles across all die to reach the target drive lifetime.
Recommandé
Industrial Data Loggers
Industrial data loggers recording sensor streams over months or years benefit from the K9DVGB8U5M's non-volatile density: vibration immunity and absence of mechanical wear suit factory and field environments. Writes append sequentially page by page; when a block fills, the controller erases it and continues on the next block, with a wear-leveling counter preventing any block from exceeding rated endurance. Power-loss robustness comes from the WP pin holding the array inert during brownouts, plus firmware journaling so partially programmed pages are discarded on reboot. Verify the operating temperature range against the cabinet environment before deployment.
Recommandé
Networking Equipment Code and Data Storage
Routers, switches, and base-station equipment store firmware images, configuration, and logs on NAND Flash such as the K9DVGB8U5M. Typical topology: a small NOR or SPI flash holds the immutable bootloader while the K9 NAND holds the main firmware image, dual-image fallback copies, and persistent configuration. Read latency per page is low enough for boot in the hundreds-of-milliseconds class, and spare area stores ECC parity protecting images against bit rot over long service life. Field firmware updates simply reprogram designated blocks, so remote management software can roll back to a verified image after any failed update.
Recommandé
Consumer Electronics Storage (TVs, STBs, Cameras)
Consumer platforms - smart TVs, set-top boxes, digital cameras, and DVRs - use K9-class NAND for application code, channel databases, and recorded media buffers. The K9DVGB8U5M's cost-per-gigabyte profile suits consumer BOM pressure, while the standard asynchronous interface lets mainstream SoCs integrate it without special PHYs. Recorded-video streaming writes large sequential pages, an access pattern NAND handles efficiently; thumbnail databases add small random reads that benefit from controller-level read-ahead caching. Consumer designs typically accept the standard commercial temperature range and rely on vendor-provided FTL middleware to manage ECC and bad blocks.
Recommandé
Automotive Infotainment and Telematics (Design-Level Evaluation)
Automotive infotainment head units and telematics boxes require rugged, high-density storage for maps, media, and OTA update staging. Where the standard K9DVGB8U5M's temperature grade meets the application's thermal zone requirement, its asynchronous interface integrates easily with infotainment SoCs. Automotive deployments add an extra reliability layer: power-fail interrupt circuits assert WP immediately on crank or load-dump events, and the FTL keeps a redundant superblock for metadata journaling. For zones exceeding commercial temperature limits, qualify the automotive-graded variant within Samsung's K9 portfolio and re-run ECC margin testing at temperature extremes.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K9DVGB8U5M — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K9MDG08U5M | K9PDG08U5M | K9NCG08U5M |
|---|---|---|---|---|
| Package | Standard K9 surface-mount package | Standard K9 surface-mount package - same footprint family | Standard K9 surface-mount package - same footprint family | Standard K9 surface-mount package - same footprint family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Interface | Asynchronous x8-bit I/O | Asynchronous x8-bit I/O | Asynchronous x8-bit I/O | Asynchronous x8-bit I/O (2G/4G/8G x8 per datasheet) |
| Command Set | Samsung K9 NAND standard (CLE/ALE/WE/RE/CE/R/B/WP) | Samsung K9 NAND standard | Samsung K9 NAND standard | Samsung K9 NAND standard |
| Density Generation | DVGB suffix generation | MDG suffix generation | PDG suffix generation | NCG generation, 2G/4G/8G x8 |
| ECC Requirement | Host controller ECC required | Host controller ECC required | Host controller ECC required | Host controller ECC required |
Principaux différenciateurs
- Latest DVGB suffix generation in the K9 x8 family (vs K9NCG08U5M)
- Standard Samsung K9 asynchronous command set retained (vs K9PRGY8S7M)
- Trade-off: commodity timing variance across generations (vs K9MDG08U5M)
Notes de conception
Raw NAND has no internal ECC: the K9DVGB8U5M will corrupt data without host-side error correction. Size the ECC (BCH or LDPC) to the process node's raw bit error rate and store parity in page spare area. Also implement bad-block management - Samsung ships NAND with factory-marked bad blocks recorded in the first page of each bad block; the controller must scan and build a replacement table at initialization and mark newly failing blocks at runtime.
Tie the WP (Write Protect) pin to an actively driven signal, not a static pull-up. During power supply brownout or power-down, uncontrolled WE glitches can partially program pages and destroy data. A supervisor circuit that asserts WP low when VCC falls below the valid threshold prevents corruption. Decouple VCC with at least 0.1 uF ceramic close to the package plus bulk capacitance for program-current transients during page programming operations.
Keep the multiplexed command/address/data bus (I/O0-I/O7) and control lines (CLE, ALE, WE, RE, CE) short and matched in length where possible. NAND I/O edges are fast enough that stubs over roughly 10 cm on a two-layer board can cause ringing; add series termination (22-33 ohm) near the driver on WE and RE if traces exceed this. The open-drain R/B line needs a pull-up (typically 10 kohm to VCC) and should not be shared across die unless wired-AND status polling is intended.
Informations de conformité
Compliance statements were not present in the retrieved verified web data for this exact suffix. Samsung current-production memory is generally RoHS-oriented, but confirm via the official Samsung Semiconductor environmental documentation before regulatory filings.
