K9T1G08U0M-PIB0 vs MT29F1G08ABAEAWP-IT:E Comparaison
Comparaison détaillée côte à côte de K9T1G08U0M-PIB0 par Samsung Electronics et MT29F1G08ABAEAWP-IT:E par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Micron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ ActifComparaison des spécifications
| Paramètre | K9T1G08U0M-PIB0 | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| Marque | Samsung Electronics | Micron Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | NRND | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,85 | $1,60 |
| Type de mémoire | Non-volatile NAND Flash (SLC) | — |
| Density | 1 Gbit (128 MB) | — |
| Organisation de la mémoire | 128M x 8 bit | 128M x 8 |
| Cell Technology | SLC (Single-Level Cell) | — |
| Interface | Asynchronous NAND, 8-bit I/O bus | Parallel |
| Page Size | 2 Kbytes + 64 bytes spare area | 2048 bytes + 64 bytes spare |
| Block Size | 128 Kbytes (64 pages per block) | 128 KB |
| VCC Supply Voltage | 2.7 V to 3.6 V | — |
| Température de fonctionnement | [DATA_NEEDED: industrial vs commercial grade] | -40C to +85C |
| Boîtier | 48-pin TSOP Type I (WSOP1) | TSOP-48 |
| Pb-Free (Lead-Free) | Yes (PIB0 suffix indicates Pb-free) | — |
| RoHS Compliance | Compliant (Pb-free variant) | — |
| Endurance (P/E Cycles) | [DATA_NEEDED: typical P/E endurance spec] | — |
| Data Retention | [DATA_NEEDED: data retention spec] | 10 years |
| Programming Time per Page | [DATA_NEEDED: typical tPROG] | — |
| Block Erase Time | [DATA_NEEDED: typical tBERS] | — |
| Type de montage | Surface Mount (TSOP) | Surface Mount |
| Command Set | Standard NAND (ONFI-compatible legacy commands) | — |
| Taille de mémoire | — | 1 Gbit (128 MB) |
| Tension d'alimentation | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |
| Statut RoHS | — | Compliant |