K9T1G08U0M-PIB0 vs MT29F1G08ABAEAWP-IT:E 对比
详细并排对比 K9T1G08U0M-PIB0 出自 Samsung Electronics 和 MT29F1G08ABAEAWP-IT:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9T1G08U0M-PIB0 | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 不推荐新设计 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.85 | $1.60 |
| 存储器类型 | Non-volatile NAND Flash (SLC) | — |
| Density | 1 Gbit (128 MB) | — |
| 存储组织 | 128M x 8 bit | 128M x 8 |
| Cell Technology | SLC (Single-Level Cell) | — |
| 接口 | Asynchronous NAND, 8-bit I/O bus | Parallel |
| Page Size | 2 Kbytes + 64 bytes spare area | 2048 bytes + 64 bytes spare |
| Block Size | 128 Kbytes (64 pages per block) | 128 KB |
| VCC Supply Voltage | 2.7 V to 3.6 V | — |
| 工作温度 | [DATA_NEEDED: industrial vs commercial grade] | -40C to +85C |
| 封装 | 48-pin TSOP Type I (WSOP1) | TSOP-48 |
| Pb-Free (Lead-Free) | Yes (PIB0 suffix indicates Pb-free) | — |
| RoHS Compliance | Compliant (Pb-free variant) | — |
| Endurance (P/E Cycles) | [DATA_NEEDED: typical P/E endurance spec] | — |
| Data Retention | [DATA_NEEDED: data retention spec] | 10 years |
| Programming Time per Page | [DATA_NEEDED: typical tPROG] | — |
| Block Erase Time | [DATA_NEEDED: typical tBERS] | — |
| 安装类型 | Surface Mount (TSOP) | Surface Mount |
| Command Set | Standard NAND (ONFI-compatible legacy commands) | — |
| 存储容量 | — | 1 Gbit (128 MB) |
| 电源电压 | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |
| RoHS 状态 | — | Compliant |