MP3V5010GVP vs MPVZ5010G7U Comparaison
Comparaison détaillée côte à côte de MP3V5010GVP par NXP Semiconductors et MPVZ5010G7U par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPVZ5010G7U - 10 kPa Vented Gauge Pressure Sensor, 8-DIP | NXP
MPVZ5010G7U ✓ ActifComparaison des spécifications
| Paramètre | MP3V5010GVP | MPVZ5010G7U |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,85 | $7,25 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | — |
| Type de sortie | Analog Voltage (ratiometric) | Analog, ratiometric to Vcc |
| Plage de tension de sortie | 0.1 V to 3.1 V | — |
| Tension d'alimentation | 2.7 V to 3.3 V (3 V nominal) | — |
| Sensitivity | 0.2 V/kPa nominal | — |
| Accuracy | 5% (0 to 85 C) | ±1.5 %FS (0 °C to 85 °C) |
| Température de fonctionnement | -40 C to +125 C | — |
| Storage Temperature | -40 C to +125 C | — |
| Port Configuration | Vertical bottom-port male tube, 0.13" (3.17 mm) | — |
| Boîtier | SOP-8 (Case 1368-01), 8-SMD Module | 8-DIP Module (Case 1368-01, through-hole) |
| Type de montage | Surface Mount | Through-Hole (DIP module with vent tube) |
| Automotive Qualification | AEC-Q100 | — |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Supply Voltage (Vcc) | — | 4.75 V to 5.25 V (5 V typical) |
| Courant d'alimentation | — | 10 mA (maximum) |
| Analog Output Range | — | 0.2 V to 4.7 V |
| Response Time | — | [DATA_NEEDED: response time ms] |
| Plage de température de fonctionnement | — | 0 °C to +85 °C |
| Compensated Temperature Range | — | -10 °C to +60 °C |
| Storage Temperature Range | — | -30 °C to +100 °C [DATA_NEEDED: confirm exact storage spec] |
| Sensor Technology | — | Piezoresistive silicon micromachined |
| Signal Conditioning | — | On-chip, temperature compensated, calibrated |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |
| Body Height | — | 5.46 mm |