MPX10DP vs MPXC2011DT1 Comparaison

Comparaison détaillée côte à côte de MPX10DP par STMicroelectronics et MPXC2011DT1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

NXP Semiconductors
MPXC2011DT1 MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 ✓ Actif

Comparaison des spécifications

Paramètre MPX10DP MPXC2011DT1
Marque STMicroelectronics NXP Semiconductors
Catégorie Pressure Sensors Pressure Sensors
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $6,09 $14,95
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 PSI to 1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
Type de sortie Analog Wheatstone bridge (uncompensated) Analog Wheatstone bridge (ratiometric)
Output Voltage Span 0 mV to 35 mV at 3 V excitation —
Supply Voltage (Excitation) 3 V DC typical —
Port Configuration Dual male 0.19 in (4.93 mm) tube, axial —
Boîtier / Format 4-SIP Module —
Type de montage Through-Hole Through-hole (PCB mount with side-port tubing)
Température de fonctionnement [DATA_NEEDED: operating temperature range] 0 °C to +85 °C
Bridge Impedance [DATA_NEEDED: input/output bridge resistance] —
Linearity [DATA_NEEDED: linearity %FS] —
Temperature Compensation None (uncompensated) —
Statut RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status not in web data]
Media Compatibility Dry gases (non-corrosive) —
Full-Scale Output — 25 mV typical at 10 V excitation
Sensitivity — 2.5 mV/kPa typical
Excitation Voltage — 3 V DC to 10 V DC (10 V nominal)
Boîtier — 4-SSIP Chip Pak module, side port
Port Style — Female, 3.25 mm (0.128 in) barbed side port
Termination Style — Through-hole PCB, 4 leads
Compensation — On-chip temperature compensated and calibrated
Technology — Piezoresistive silicon strain gauge
Module Dimensions — 7.6 mm x 12.8 mm nominal

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