MPX10DP vs MPXC2011DT1 Comparación

Comparación detallada lado a lado de MPX10DP por STMicroelectronics y MPXC2011DT1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MPXC2011DT1 MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 ✓ Activo

Comparación de especificaciones

Parámetro MPX10DP MPXC2011DT1
Marca STMicroelectronics NXP Semiconductors
Categoría Pressure Sensors Pressure Sensors
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $6,09 $14,95
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 PSI to 1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
Tipo de salida Analog Wheatstone bridge (uncompensated) Analog Wheatstone bridge (ratiometric)
Output Voltage Span 0 mV to 35 mV at 3 V excitation —
Supply Voltage (Excitation) 3 V DC typical —
Port Configuration Dual male 0.19 in (4.93 mm) tube, axial —
Encapsulado / Carcasa 4-SIP Module —
Tipo de montaje Through-Hole Through-hole (PCB mount with side-port tubing)
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] 0 °C to +85 °C
Bridge Impedance [DATA_NEEDED: input/output bridge resistance] —
Linearity [DATA_NEEDED: linearity %FS] —
Temperature Compensation None (uncompensated) —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status not in web data]
Media Compatibility Dry gases (non-corrosive) —
Full-Scale Output — 25 mV typical at 10 V excitation
Sensitivity — 2.5 mV/kPa typical
Excitation Voltage — 3 V DC to 10 V DC (10 V nominal)
Encapsulado — 4-SSIP Chip Pak module, side port
Port Style — Female, 3.25 mm (0.128 in) barbed side port
Termination Style — Through-hole PCB, 4 leads
Compensation — On-chip temperature compensated and calibrated
Technology — Piezoresistive silicon strain gauge
Module Dimensions — 7.6 mm x 12.8 mm nominal

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