MPX10DP vs MPXC2011DT1 비교

다음의 상세 나란히 비교: MPX10DP 제조: STMicroelectronics 및 MPXC2011DT1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MPXC2011DT1 MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 ✓ 활성

사양 비교

파라미터 MPX10DP MPXC2011DT1
브랜드 STMicroelectronics NXP Semiconductors
카테고리 Pressure Sensors Pressure Sensors
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $6.09 $14.95
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 PSI to 1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
출력 유형 Analog Wheatstone bridge (uncompensated) Analog Wheatstone bridge (ratiometric)
Output Voltage Span 0 mV to 35 mV at 3 V excitation —
Supply Voltage (Excitation) 3 V DC typical —
Port Configuration Dual male 0.19 in (4.93 mm) tube, axial —
패키지 / 케이스 4-SIP Module —
실장 유형 Through-Hole Through-hole (PCB mount with side-port tubing)
동작 온도 [DATA_NEEDED: operating temperature range] 0 °C to +85 °C
Bridge Impedance [DATA_NEEDED: input/output bridge resistance] —
Linearity [DATA_NEEDED: linearity %FS] —
Temperature Compensation None (uncompensated) —
RoHS 상태 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status not in web data]
Media Compatibility Dry gases (non-corrosive) —
Full-Scale Output — 25 mV typical at 10 V excitation
Sensitivity — 2.5 mV/kPa typical
Excitation Voltage — 3 V DC to 10 V DC (10 V nominal)
패키지 — 4-SSIP Chip Pak module, side port
Port Style — Female, 3.25 mm (0.128 in) barbed side port
Termination Style — Through-hole PCB, 4 leads
Compensation — On-chip temperature compensated and calibrated
Technology — Piezoresistive silicon strain gauge
Module Dimensions — 7.6 mm x 12.8 mm nominal

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