MPXM2010GS vs MPX2010D Comparaison
Comparaison détaillée côte à côte de MPXM2010GS par NXP Semiconductors et MPX2010D par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActifComparaison des spécifications
| Paramètre | MPXM2010GS | MPX2010D |
|---|---|---|
| Marque | NXP Semiconductors | STMicroelectronics |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,62 | $9,10 |
| Pressure Type | Vented Gauge | Differential (Port 1 vs Port 2) |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload pressure] | — |
| Type de sortie | Wheatstone Bridge (analog, differential mV) | Analog Wheatstone Bridge (mV) |
| Output Voltage Span | 0 mV to 25 mV at 10 V excitation | 0 mV to 25 mV at 10V excitation |
| Sensitivity | 2.5 mV/kPa (nominal at 10 V) | 2.5 mV/kPa (nominal, at 10V excitation) |
| Excitation Voltage | 10 V (max 16 V per NXP datasheet) | 10 V (typical), 16 V (maximum) |
| Courant d'alimentation | 6 mA (typical at 10 V excitation) | — |
| Température de fonctionnement | -40 °C to +125 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Linearity | [DATA_NEEDED: linearity %] | 0.1% of full-scale (typical) |
| Temperature Compensation | On-chip (laser-trimmed thin-film) | — |
| Port Configuration | Top port, male 0.12" (2.97 mm) tube | — |
| Boîtier | 5-SMD Module, top port | — |
| Type de montage | Surface Mount | Through-Hole |
| Packing | Reel-Reel 13" Q2 NDP | — |
| Min Package Quantity | 400 | — |
| Min Order Quantity | 400 | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status from ST datasheet] |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Plage de température de fonctionnement | — | 0 C to +85 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Boîtier / Format | — | 4-SIP Module (Case 344-15) |
| Nombre de broches | — | 4 |
| On-Chip Temperature Compensation | — | Yes (laser trimmed) |
| Bridge Configuration | — | 4-arm piezoresistive Wheatstone |
| Sensor Family | — | MPX2010 / MPXV2010G / MPXM2010 |
| Diaphragm Type | — | Single monolithic silicon |