MRF6S19100HR3 vs MRF8S18120HR3 Comparaison
Comparaison détaillée côte à côte de MRF6S19100HR3 par NXP Semiconductors et MRF8S18120HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ ActifNXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S19100HR3 | MRF8S18120HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $95,00 | $54,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S19100HR3 | MRF8S18120HR3 |
| Device Type | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) | — |
| Technology | N-Channel LDMOS | — |
| Operating Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB, Avg) | 22 W (N-CDMA Average) | — |
| Power Gain | 16.1 dB (typical at 1.99 GHz) | — |
| Drain Voltage (Vds) | 28 V | — |
| Quiescent Drain Current (Idq) | 900 mA (typical) | — |
| Boîtier / Format | NI-780H-2L (Case 465-06, Style 1) | — |
| Type de montage | Flanged / Screw-mount with ceramic body | Surface Mount / Screw-down heatsink |
| Lead Style | Dual blade (HR3 suffix) | — |
| Operating Mode | Class AB (linear) | Class AB, Class C |
| Target Applications | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL | — |
| Statut RoHS | Compliant (per NXP product page) | Compliant per NXP product page |
| Type de transistor | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 1805 to 1880 MHz |
| Output Power (CW) | — | 72 W |
| Power Gain (typ) | — | 18.2 dB at 1.81 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 800 mA |
| Drain Current Rating | — | 10 uA (leakage spec entry per datasheet) |
| Boîtier | — | NI-780H (3-pin ceramic, flangeless) |
| Target Application | — | GSM, GSM EDGE base station PA |