MRF6S19100HR3 vs MRF8S18120HR3 Vergleich
Detaillierter Direktvergleich von MRF6S19100HR3 von NXP Semiconductors und MRF8S18120HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ AktivNXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF6S19100HR3 | MRF8S18120HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $95,00 | $54,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S19100HR3 | MRF8S18120HR3 |
| Device Type | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) | — |
| Technology | N-Channel LDMOS | — |
| Operating Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB, Avg) | 22 W (N-CDMA Average) | — |
| Power Gain | 16.1 dB (typical at 1.99 GHz) | — |
| Drain Voltage (Vds) | 28 V | — |
| Quiescent Drain Current (Idq) | 900 mA (typical) | — |
| Gehäuse / Bauform | NI-780H-2L (Case 465-06, Style 1) | — |
| Montageart | Flanged / Screw-mount with ceramic body | Surface Mount / Screw-down heatsink |
| Lead Style | Dual blade (HR3 suffix) | — |
| Operating Mode | Class AB (linear) | Class AB, Class C |
| Target Applications | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL | — |
| RoHS-Status | Compliant (per NXP product page) | Compliant per NXP product page |
| Transistortyp | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 1805 to 1880 MHz |
| Output Power (CW) | — | 72 W |
| Power Gain (typ) | — | 18.2 dB at 1.81 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 800 mA |
| Drain Current Rating | — | 10 uA (leakage spec entry per datasheet) |
| Gehäuse | — | NI-780H (3-pin ceramic, flangeless) |
| Target Application | — | GSM, GSM EDGE base station PA |