MRF6S19100HR3 vs MRF8S18120HR3 对比

详细并排对比 MRF6S19100HR3 出自 NXP Semiconductors 和 MRF8S18120HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S19100HR3 MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 ✓ 量产中
NXP Semiconductors
MRF8S18120HR3 MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP

MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP

MRF8S18120HR3 ✓ 量产中

规格对比

参数 MRF6S19100HR3 MRF8S18120HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $95.00 $54.20
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRF6S19100HR3 MRF8S18120HR3
Device Type RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) —
Technology N-Channel LDMOS —
Operating Frequency Range 1930 MHz to 1990 MHz —
Output Power (P1dB, Avg) 22 W (N-CDMA Average) —
Power Gain 16.1 dB (typical at 1.99 GHz) —
Drain Voltage (Vds) 28 V —
Quiescent Drain Current (Idq) 900 mA (typical) —
封装 / 外壳 NI-780H-2L (Case 465-06, Style 1) —
安装类型 Flanged / Screw-mount with ceramic body Surface Mount / Screw-down heatsink
Lead Style Dual blade (HR3 suffix) —
Operating Mode Class AB (linear) Class AB, Class C
Target Applications N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL —
RoHS 状态 Compliant (per NXP product page) Compliant per NXP product page
晶体管类型 — LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Frequency Range — 1805 to 1880 MHz
Output Power (CW) — 72 W
Power Gain (typ) — 18.2 dB at 1.81 GHz
Drain-Source Voltage (Rated) — 65 V
Test Drain Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 800 mA
Drain Current Rating — 10 uA (leakage spec entry per datasheet)
封装 — NI-780H (3-pin ceramic, flangeless)
Target Application — GSM, GSM EDGE base station PA

数据手册与资源

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