MRF6S19100HR3 vs MRF8S18120HR3 Сравнение
Подробное сравнение бок о бок MRF6S19100HR3 от NXP Semiconductors и MRF8S18120HR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ АктивенNXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ АктивенСравнение характеристик
| Параметр | MRF6S19100HR3 | MRF8S18120HR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $95,00 | $54,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S19100HR3 | MRF8S18120HR3 |
| Device Type | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) | — |
| Technology | N-Channel LDMOS | — |
| Operating Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB, Avg) | 22 W (N-CDMA Average) | — |
| Power Gain | 16.1 dB (typical at 1.99 GHz) | — |
| Drain Voltage (Vds) | 28 V | — |
| Quiescent Drain Current (Idq) | 900 mA (typical) | — |
| Корпус / Типоразмер | NI-780H-2L (Case 465-06, Style 1) | — |
| Тип монтажа | Flanged / Screw-mount with ceramic body | Surface Mount / Screw-down heatsink |
| Lead Style | Dual blade (HR3 suffix) | — |
| Operating Mode | Class AB (linear) | Class AB, Class C |
| Target Applications | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL | — |
| Статус RoHS | Compliant (per NXP product page) | Compliant per NXP product page |
| Тип транзистора | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 1805 to 1880 MHz |
| Output Power (CW) | — | 72 W |
| Power Gain (typ) | — | 18.2 dB at 1.81 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 800 mA |
| Drain Current Rating | — | 10 uA (leakage spec entry per datasheet) |
| Корпус | — | NI-780H (3-pin ceramic, flangeless) |
| Target Application | — | GSM, GSM EDGE base station PA |