MW7IC2220NBR1 vs MW7IC2040NR1 Comparaison

Comparaison détaillée côte à côte de MW7IC2220NBR1 par NXP Semiconductors et MW7IC2040NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

NXP Semiconductors
MW7IC2220NBR1 MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 ✓ Actif
NXP Semiconductors
MW7IC2040NR1 MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 ✓ Actif

Comparaison des spécifications

Paramètre MW7IC2220NBR1 MW7IC2040NR1
Marque NXP Semiconductors NXP Semiconductors
Catégorie RF Amplifiers RF Amplifiers
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $21,50 $24,20
Technology RF LDMOS (Laterally Diffused MOSFET) RF LDMOS (Laterally Diffused MOSFET)
Fonction W-CDMA Wideband Integrated Power Amplifier Two-stage integrated power amplifier with on-chip matching
Frequency Range 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) —
Operating Frequency (typical) 2167.5 MHz —
Average Output Power 2 W (33 dBm) —
Drain Supply Voltage (VDD) 28 V (24 V to 32 V operating range) —
Small-Signal Gain 31 dB (typical at 2.17 GHz) 23.5 dB
Quiescent Current Stage 1 (IDQ1) 80 mA —
Quiescent Current Stage 2 (IDQ2) 300 mA —
Package Type TO-272WB-16 (over-molded plastic) —
Input Matching On-chip (50 ohm nominal) —
Output Matching On-chip (50 ohm nominal) —
Characteristic Impedance 50 ohm —
Maximum Operating Temperature 150 C —
Type de montage Surface Mount (flange/over-molded) Surface Mount (PCB solderable with bottom drain ground plane)
Modulation Support W-CDMA, TD-SCDMA, LTE, multi-carrier —
Test Signal Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB —
ACPR Measurement 3.84 MHz channel bandwidth at +/-5 MHz offset —
Manufacturer — NXP Semiconductors (formerly Freescale / Motorola Semiconductor)
RF Type — General Purpose / Wideband Integrated Power Amplifier
Frequency Range (Application) — 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS)
Frequency Range (Characterization) — 100 MHz to 1 GHz
Supply Voltage (Vdd) — 24 V to 32 V (nominal 28 V)
Maximum Supply Voltage — 32 V
Quiescent Supply Current (Idq) — 75 mA
Output Power (avg, W-CDMA) — 4 W (typical at rated operating conditions)
Modulation Compatibility — Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats
Boîtier / Format — TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount
Nombre de broches — 16
Operating Mode — Class-AB (multi-stage, externally biased)
Lead Configuration — Flat leads (surface-mount)
Température de fonctionnement — -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family)
Packaging Type — Tape & Reel (per part suffix NR1 suffix convention)
Statut RoHS — Compliant (per NXP product family)

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