MW7IC2220NBR1 vs MW7IC2040NR1 Comparação

Comparação detalhada lado a lado de MW7IC2220NBR1 por NXP Semiconductors e MW7IC2040NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MW7IC2220NBR1 MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 ✓ Ativo
NXP Semiconductors
MW7IC2040NR1 MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 ✓ Ativo

Comparação de especificações

Parâmetro MW7IC2220NBR1 MW7IC2040NR1
Marca NXP Semiconductors NXP Semiconductors
Categoria RF Amplifiers RF Amplifiers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $21,50 $24,20
Technology RF LDMOS (Laterally Diffused MOSFET) RF LDMOS (Laterally Diffused MOSFET)
Função W-CDMA Wideband Integrated Power Amplifier Two-stage integrated power amplifier with on-chip matching
Frequency Range 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) —
Operating Frequency (typical) 2167.5 MHz —
Average Output Power 2 W (33 dBm) —
Drain Supply Voltage (VDD) 28 V (24 V to 32 V operating range) —
Small-Signal Gain 31 dB (typical at 2.17 GHz) 23.5 dB
Quiescent Current Stage 1 (IDQ1) 80 mA —
Quiescent Current Stage 2 (IDQ2) 300 mA —
Package Type TO-272WB-16 (over-molded plastic) —
Input Matching On-chip (50 ohm nominal) —
Output Matching On-chip (50 ohm nominal) —
Characteristic Impedance 50 ohm —
Maximum Operating Temperature 150 C —
Tipo de montagem Surface Mount (flange/over-molded) Surface Mount (PCB solderable with bottom drain ground plane)
Modulation Support W-CDMA, TD-SCDMA, LTE, multi-carrier —
Test Signal Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB —
ACPR Measurement 3.84 MHz channel bandwidth at +/-5 MHz offset —
Manufacturer — NXP Semiconductors (formerly Freescale / Motorola Semiconductor)
RF Type — General Purpose / Wideband Integrated Power Amplifier
Frequency Range (Application) — 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS)
Frequency Range (Characterization) — 100 MHz to 1 GHz
Supply Voltage (Vdd) — 24 V to 32 V (nominal 28 V)
Maximum Supply Voltage — 32 V
Quiescent Supply Current (Idq) — 75 mA
Output Power (avg, W-CDMA) — 4 W (typical at rated operating conditions)
Modulation Compatibility — Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats
Encapsulamento / Caixa — TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount
Contagem de pinos — 16
Operating Mode — Class-AB (multi-stage, externally biased)
Lead Configuration — Flat leads (surface-mount)
Temperatura de operação — -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family)
Packaging Type — Tape & Reel (per part suffix NR1 suffix convention)
Status RoHS — Compliant (per NXP product family)

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