MW7IC2220NBR1 vs MW7IC2040NR1 Comparación
Comparación detallada lado a lado de MW7IC2220NBR1 por NXP Semiconductors y MW7IC2040NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ ActivoNXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ ActivoComparación de especificaciones
| Parámetro | MW7IC2220NBR1 | MW7IC2040NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,50 | $24,20 |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | RF LDMOS (Laterally Diffused MOSFET) |
| Función | W-CDMA Wideband Integrated Power Amplifier | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) | — |
| Operating Frequency (typical) | 2167.5 MHz | — |
| Average Output Power | 2 W (33 dBm) | — |
| Drain Supply Voltage (VDD) | 28 V (24 V to 32 V operating range) | — |
| Small-Signal Gain | 31 dB (typical at 2.17 GHz) | 23.5 dB |
| Quiescent Current Stage 1 (IDQ1) | 80 mA | — |
| Quiescent Current Stage 2 (IDQ2) | 300 mA | — |
| Package Type | TO-272WB-16 (over-molded plastic) | — |
| Input Matching | On-chip (50 ohm nominal) | — |
| Output Matching | On-chip (50 ohm nominal) | — |
| Characteristic Impedance | 50 ohm | — |
| Maximum Operating Temperature | 150 C | — |
| Tipo de montaje | Surface Mount (flange/over-molded) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Modulation Support | W-CDMA, TD-SCDMA, LTE, multi-carrier | — |
| Test Signal | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB | — |
| ACPR Measurement | 3.84 MHz channel bandwidth at +/-5 MHz offset | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| RF Type | — | General Purpose / Wideband Integrated Power Amplifier |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Encapsulado / Carcasa | — | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Recuento de pines | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Temperatura de funcionamiento | — | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |
| Estado RoHS | — | Compliant (per NXP product family) |