RMLV0816BGSD-4S2 vs RMLV0816BGSD-4S2#AC0 Comparaison
Comparaison détaillée côte à côte de RMLV0816BGSD-4S2 par Renesas Electronics et RMLV0816BGSD-4S2#AC0 par Renesas Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Renesas Electronics
RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas
RMLV0816BGSD-4S2 ✓ ActifRenesas Electronics
RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52
RMLV0816BGSD-4S2#AC0 ✓ ActifComparaison des spécifications
| Paramètre | RMLV0816BGSD-4S2 | RMLV0816BGSD-4S2#AC0 |
|---|---|---|
| Marque | Renesas Electronics | Renesas Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,50 | $3,78 |
| Type de mémoire | Static RAM (SRAM), Asynchronous | Volatile SRAM (LPSRAM) |
| Memory Subcategory | Low-Power SRAM (LPSRAM) | — |
| Memory Density | 8 Mbit | — |
| Organisation de la mémoire | 524,288-word x 16-bit (512K x 16) | 524,288-word × 16-bit (configurable to 1M × 8) |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.4 V to 3.6 V |
| Access Time | 45 ns | 45 ns |
| Interface | Parallel (asynchronous) | — |
| Plage de température de fonctionnement | -40 C to +85 C (industrial) | -40 °C to +85 °C |
| Boîtier | 52-pin TSOP-II | — |
| Type de montage | Surface Mount | Surface Mount |
| Output Enable (/OE) | Yes | — |
| Write Enable (/WE) | Yes | — |
| Chip Select (/CS) | Yes | — |
| Byte Control | /LB and /UB (lower/upper byte enable) | UB# (upper byte), LB# (lower byte) |
| I/O Compatibility | TTL-compatible | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Active Current | [DATA_NEEDED: operating current] | — |
| Process Technology | Renesas Advanced LPSRAM CMOS | Renesas Advanced LPSRAM CMOS |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 3 (per JEDEC J-STD-020, typical for TSOP-II) | MSL3 (per JEDEC J-STD-020, where stated in the datasheet) |
| Taille de mémoire | — | 8 Mbit |
| Bus Width | — | Parallel, 8-bit or 16-bit |
| Type d'interface | — | Parallel (asynchronous) |
| Package Type | — | 52-TSOP II |
| Configuration de sortie | — | Three-state (with OE# control) |
| Write Control | — | WE# (active-low) |
| Chip Enable | — | CE# (active-low) |
| Data Retention Voltage (typical) | — | 2.0 V [DATA_NEEDED: confirm from datasheet retention section] |