RTAX2000DL-CQ352V vs RTAX2000DL-CQ352B Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000DL-CQ352V sa pamamagitan ng Microchip Technology at RTAX2000DL-CQ352B sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Microchip Technology
RTAX2000DL-CQ352V RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352V ✓ Nakahanda
Microchip Technology
RTAX2000DL-CQ352B RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro RTAX2000DL-CQ352V RTAX2000DL-CQ352B
Brand Microchip Technology Microchip Technology
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Equivalent System Gates 2,000,000 2,000,000
Logic Cells 29,568 [DATA_NEEDED: Logic Cells]
CLBs 19,712 19,712
Technology CMOS, antifuse (nonvolatile, one-time programmable) —
Core Supply Voltage 1.5 V nominal (1.425 V to 1.575 V) —
DSP Mathblocks Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) Up to 120
Embedded Memory Up to 540 kbits SRAM with optional EDAC Up to 540 kbits with optional EDAC protection
Maximum Combinatorial Delay 1.100 ns —
Total Ionizing Dose (TID) 300 krad (functional); 200 krad (per family data) —
Packhaging CQFP-352, hermetically sealed ceramic, metal-sealed cofired 352-terminal ceramic CQFP, metal-sealed
Terminal Pitch 0.500 mm 0.500 mm
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +125C [DATA_NEEDED: Operating Temperature Range]
Configuration Live-at-power-up (antifuse, no external boot device) Live at power-up, no external boot PROM required
Family RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) —
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Programming Technology — Nonvolatile antifuse
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parameter) — 200 krad (Si)
Core Supply Voltage (Nominal) — 1.5 V
Core Supply Voltage Range — 1.425 V to 1.575 V
Application Domain — Space flight systems

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