RTAX2000DL-CQ352V vs RTAX2000DL-CQ352B Perbandingan
Perbandingan bersamaan detil RTAX2000DL-CQ352V dari Microchip Technology dan RTAX2000DL-CQ352B dari Microchip Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Microchip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ AktifMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | RTAX2000DL-CQ352V | RTAX2000DL-CQ352B |
|---|---|---|
| Merek | Microchip Technology | Microchip Technology |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| Logic Cells | 29,568 | [DATA_NEEDED: Logic Cells] |
| CLBs | 19,712 | 19,712 |
| Technology | CMOS, antifuse (nonvolatile, one-time programmable) | — |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | — |
| DSP Mathblocks | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) | Up to 120 |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | Up to 540 kbits with optional EDAC protection |
| Maximum Combinatorial Delay | 1.100 ns | — |
| Total Ionizing Dose (TID) | 300 krad (functional); 200 krad (per family data) | — |
| Paket | CQFP-352, hermetically sealed ceramic, metal-sealed cofired | 352-terminal ceramic CQFP, metal-sealed |
| Terminal Pitch | 0.500 mm | 0.500 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +125C | [DATA_NEEDED: Operating Temperature Range] |
| Configuration | Live-at-power-up (antifuse, no external boot device) | Live at power-up, no external boot PROM required |
| Family | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) | — |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Application Domain | — | Space flight systems |