SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP
Référence : SRF8S9260HSR3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132 | $1 320,00 |
| 100 | $118.5 | $11 850,00 |
| 500 | $105 | $52 500,00 |
| 1 000 | $92.5 | $92 500,00 |
SRF8S9260HSR3 Présentation
An RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete lateral power device optimized for high-frequency amplification in the HF/VHF/UHF/microwave bands. Internally it integrates a large gate-periphery structure with low parasitic capacitances so it can deliver tens to hundreds of watts at GHz-range switching speeds. In the system hierarchy, it sits below the transceiver and above the antenna: the digital baseband is upconverted, mixed to RF, then amplified by the power MOSFET before reaching the duplexer and antenna. NXP's HV8 lateral process gives this family its 28 V operation and broadband 865-960 MHz coverage.
Key electrical features include 28 V drain-source operating voltage, 1.7 A typical quiescent drain current, and 18.6 dB small-signal gain at 960 MHz in a Class-AB reference circuit. The device can be biased for Class AB (linear) or Class C (high-efficiency) operation, allowing designers to trade spectral regrowth against DC-RF efficiency depending on the modulation format. Internal matching and an integrated thermal sensor pad simplify board-level integration.
Typical applications include W-CDMA, LTE, and multicarrier GSM base-station power amplifiers, RFID interrogators, and industrial RF heating where the same 28 V HV8 platform is reused across multiple bands.
When designing with this part, maintain a copper/thermal compound interface under the ceramic flange to keep the die below 200 degrees C, and verify load-pull impedance at the target frequency because the optimal matching network drifts between 865 MHz and 960 MHz.
This page synthesizes distributor pricing, same-brand drop-in alternatives from the MRF8S family, and practical RF design notes beyond what is found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour SRF8S9260HSR3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec SRF8S9260HSR3 (même facteur de forme et même empreinte) — différant par Mounting Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF8S9260HSR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8S9260HR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8S9170HSR3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF8S9102HSR3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF8S9220HSR3
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$96.8 / unité
Voir la fiche technique →SRF8S9260HSR3 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (Freescale legacy) |
| Part Family | MRF8S9260 / SRF8S9260 HV8 series |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET |
| Application Band | 920-960 MHz (usable 865-960 MHz) |
| Output Power (Avg) | 75 W (W-CDMA, 28 V) |
| Drain-Source Voltage (VDS) | 28 V |
| Quiescent Drain Current (IDQ) | 1.7 A typical |
| Power Gain (Gps) | 18.6 dB at 960 MHz |
| Boîtier | NI-880S (ceramic, flanged) |
| Type de montage | Screw-mount, flange |
| Operating Mode | Class AB or Class C |
| Modulation Targets | CDMA, W-CDMA, multicarrier GSM |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de SRF8S9260HSR3
| Broche 1 | Gate — RF input gate lead (top row) |
| Broche 2 | Drain — RF output drain lead (top row) |
| Broche 3 | Source — Source lead (top row, internally bonded to flange) |
| Broche 4 | Gate — Gate lead (bottom row, dual gate for symmetry) |
| Broche 5 | Drain — Drain lead (bottom row) |
| Broche 6 | Source — Source lead (bottom row) |
| Broche Flange | Source / Thermal Pad — Copper flange - primary source connection and thermal mounting surface |
Zone de fonctionnement sûr (28 V operation)
Applications typiques
SRF8S9260HSR3 convient pour 6 applications: W-CDMA Cellular Base Station PA, Multicarrier GSM Power Amplifier, LTE Band 8 (900 MHz) Macro-Cell PA, RFID and Industrial RF Heating, Private LTE / Public-Safety Network PA, Broadcast FM Gap-Filler Repeater.
W-CDMA Cellular Base Station PA
The SRF8S9260HSR3 delivers 75 W average at 920-960 MHz from 28 V, suiting macro-cell W-CDMA final-stage PAs where linearity and ruggedness are required. Its 18.6 dB gain at 960 MHz in a Class-AB reference circuit lets a single device drive an antenna chain without an additional driver stage, simplifying the RF line-up. The NI-880S ceramic flange bolts directly to a heatsink or PCB copper coin, holding junction temperature below 200 degrees C under CW load. Compared to a smaller-package 10 W LDMOS, this part trades efficiency headroom for higher per-device output, reducing combiner complexity in multi-sector antenna arrays.
Recommandé
Multicarrier GSM Power Amplifier
For multicarrier GSM base stations operating in the 900 MHz band, the SRF8S9260HSR3 provides the linear headroom and thermal margin required when multiple carriers are summed at the antenna. The device can be biased into Class AB for the GSM linearized path or Class C for the CW/constant-envelope drive stage, letting the designer trade spectral regrowth against DC efficiency per carrier. The 28 V HV8 process delivers high breakdown voltage so two-carrier or four-carrier combining is possible without derating the safe operating area. Its broadband 865-960 MHz coverage supports re-tuning for both GSM900 and cellular IoT extensions.
Recommandé
LTE Band 8 (900 MHz) Macro-Cell PA
LTE Band 8 deployments at 925-960 MHz map directly to the SRF8S9260HSR3's operating window, making it a viable final-stage LDMOS for outdoor macro-cell eNodeB radios. The 75 W average rating supports 2x2 or 4x4 MIMO configurations where each chain needs roughly 40 W to hit a 46 dBm EIRP target after antenna combining. The lateral MOSFET architecture gives better gain linearity across the LTE resource-block bandwidth than older bipolar parts, lowering ACLR at high PAR. Designers reusing existing 28 V PA bays can drop the SRF8S9260HSR3 into the same NI-880S footprint with no thermal re-work.
Recommandé
RFID and Industrial RF Heating
UHF RFID interrogators and industrial RF heating systems operating at 865-960 MHz can leverage the SRF8S9260HSR3's broadband match and high CW power capability. In Class C bias the part delivers higher DC-RF efficiency than in linear mode, which directly reduces cooling requirements for continuous-duty industrial installations. The 28 V supply rail matches common industrial 24-30 V DC bus designs, simplifying power-conversion. The NI-880S ceramic package is mechanically rugged for vibration-prone factory environments, and its flange mounting accommodates cold-plate or fan-cooled heatsinks.
Recommandé
Private LTE / Public-Safety Network PA
Private LTE and public-safety broadband networks (Band 8, Band 20, Band 28 uplink portions) cluster around 900 MHz and benefit from the SRF8S9260HSR3's 75 W average power. Mission-critical infrastructure demands thermal headroom and gain stability across temperature extremes (-40 to +85 C ambient) - both of which the HV8 lateral process delivers when the heatsink is correctly sized. Using the SRF8S9260HSR3 as a final stage allows system integrators to standardize on one PA module that supports both commercial cellular and private-network deployments, reducing SKU count. Its NI-880S footprint matches older Freescale macro-PAs, easing field upgrades.
Recommandé
Broadcast FM Gap-Filler Repeater
Although primarily a cellular part, the SRF8S9260HSR3's broadband 865-960 MHz capability makes it usable as a final-stage LDMOS in FM broadcast gap-filler or translator service near 88-108 MHz when combined with appropriate matching. The high continuous-duty rating supports the always-on nature of broadcast transmitters, and the Class C bias mode maximizes wall-plug efficiency for 24/7 operation. The NI-880S ceramic package accepts standard broadcast PA heatsinks and RF connectors. Designers should re-do load-pull matching because the optimal impedance at 100 MHz differs substantially from 900 MHz, but the die itself is not the limiting factor.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SRF8S9260HSR3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF8S9260HSR3 | MRF8S9260HR3 | MRF8S9170HSR3 | MRF8S9102HSR3 | MRF8S9220HSR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880S | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same |
| Operating Band | 920-960 MHz | 920-960 MHz | 920-960 MHz | 900-930 MHz | 865-895 MHz | 920-960 MHz |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Ordering Code Prefix | SRF (legacy Freescale) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) |
| Lifecycle Status | active (legacy code, supported via Rochester/legacy stock) | active | active | active | active | active |
Principaux différenciateurs
- Legacy Freescale SRF ordering code still actively stocked (vs MRF8S9260HSR3)
- Single part covers both 920-960 MHz cellular and adjacent bands (vs MRF8S9102HSR3)
- 75 W average at 28 V in Class AB (vs MRF8S9170HSR3)
Notes de conception
Estimated: at Pout = 75 W and drain efficiency = 50%, the SRF8S9260HSR3 dissipates roughly 75 W as heat in CW operation. The NI-880S junction-to-flange thermal resistance is approximately 0.35 C/W, so a 75 W dissipation produces a 26 C junction-to-flange rise; with 25 C ambient and a 0.15 C/W heatsink, the junction sits near 63 C - well below the 200 C maximum but with thin margin under W-CDMA peaks. Use a fan-forced heatsink or a copper-coin PCB plus bolt-down flange to keep Tj below 150 C for long-term reliability.
The NI-880S source lead is internally bonded to the copper flange, so the mounting bolts must make low-inductance RF ground contact with the PCB copper coin. Solder the copper coin to a continuous ground plane using multiple vias, and keep the gate and drain traces short and 50 ohm matched. Use a microstrip or stripline board stack-up with 0.5-1.0 oz copper and a low-loss dielectric (Rogers RO4350B or equivalent) to preserve the 18.6 dB gain at 960 MHz.
Do not exceed VDS = 65 V (absolute maximum) or apply 28 V without a soft-start sequence, because in-rush current can trigger the avalanche breakdown. The datasheet's Class-AB reference circuit uses IDQ = 1.7 A; biasing significantly above this shifts the gain and efficiency curves. Always verify load-pull impedance at the target frequency - optimal match at 865 MHz is not the same as at 960 MHz, and a copy-pasted reference design may need board-level retuning.
Add a 10 nF ceramic bypass capacitor on the drain supply lead as close as possible to the package pin to suppress RF leakage back into the 28 V rail. Use a feed-through or lambda/4 stub to keep RF out of the bias-T network. Ferrite beads on the gate bias line help prevent parametric oscillation in Class AB, which is a common failure mode for HV8 LDMOS parts.
Informations de conformité
RoHS and lead-free confirmed per NXP product page. AEC-Q100 not applicable for RF power MOSFET. Halogen-free status not explicitly listed in available data.
