2EDN7534FXTMA1 - Dual 5A Low-Side Gate Driver DSO-8 | Infineon
Référence : 2EDN7534FXTMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.65 | $1,65 |
| 10 | $1.48 | $14,80 |
| 100 | $1.18 | $118,00 |
| 500 | $0.98 | $490,00 |
| 1 000 | $0.82 | $820,00 |
| 2 500 | $0.71 | $1 775,00 |
2EDN7534FXTMA1 Présentation
What is a gate driver IC? A gate driver is a power amplifier that accepts a low-current logic-level PWM signal from a microcontroller, FPGA, or dedicated controller IC and produces a high-current drive signal capable of rapidly charging and discharging the gate capacitance of a power MOSFET, IGBT, or WBG switch. Gate drivers sit between the control domain (digital logic) and the power domain (switching transistors), enabling clean, fast switching transitions that minimize switching losses and reduce dead time. As a low-side driver, the 2EDN7534F controls the source-referenced switch in a half-bridge or low-side power stage.
Key differentiating features of the 2EDN7534F include independent dual channels for parallel or synchronous drive, an enable input for sequenced startup, LV-TTL compatible logic inputs that tolerate -12 V to +22 V, and an absolute maximum supply of 20 V. Its active output clamping structure prevents gate voltage overshoot, which is critical when driving GaN HEMTs sensitive to Vgs transients. Tight matched-channel timing (typically <1 ns channel-to-channel skew) supports precision synchronous rectification.
Architecturally, the device uses a complementary CMOS output stage with integrated bootstrap-style pull-up/pull-down devices sized for nanosecond-class rise/fall times. The 19 ns typical propagation delay and sub-nanosecond jitter preserve PWM edge fidelity in high-frequency designs up to several MHz. Built-in under-voltage lockout (UVLO) protects against insufficient gate-drive voltage during power-up and brown-out conditions.
Typical applications include telecom 48 V bus converters, server and datacom point-of-load stages, synchronous buck and forward converter low-side switches, Class-D audio amplifier output stages, and motor drive low-side FETs in industrial automation. Designers favor this part where multiple parallel low-side MOSFETs require matched, high-current drive.
When designing with the 2EDN7534F, keep the gate-drive loop (driver output to gate to source back to driver ground) as short and wide as possible to minimize parasitic inductance that can otherwise cause ringing and EMI. Place the VDD bypass capacitor directly at the IC supply pin with a 100 nF ceramic in parallel with a 1 µF bulk capacitor.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour 2EDN7534FXTMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec 2EDN7534FXTMA1 (même facteur de forme et même empreinte) — différant par Package, Driver Type, Number of Channels, Operating Temperature Range, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
2EDN7533FXTMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
2EDN7534FXTMA1-Q
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
2EDN7534GXTMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
1EDN8511BXUSA1
✅ Remplacement direct✓ En stock
$0.54 / unité
Voir la fiche technique →1EDN8511BXUSA1
✅ Remplacement direct✓ En stock
$0.54 / unité
Voir la fiche technique →2EDN7534FXTMA1 Valeurs maximales et caractéristiques électriques
| Driver Type | Low-Side, Dual Channel |
| Number of Drivers | 2 |
| Peak Output Current | 5 A (source/sink) |
| Supply Voltage (VDD) | 4.5 V to 20 V |
| Input Voltage Range (logic pins) | -12 V to +22 V (absolute max) |
| Propagation Delay (typical) | 19 ns |
| Input Logic Compatibility | LV-TTL |
| Output Polarity | Non-Inverting |
| Output Voltage Clamping | Active, to VDD |
| Under-Voltage Lockout | Yes |
| Broche d'activation | Yes |
| Température de fonctionnement | -40C to +125C |
| Boîtier | PG-DSO-8 |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
Configuration des broches de 2EDN7534FXTMA1
| Broche 1 | IN1 — Logic input for channel 1 (LV-TTL) |
| Broche 2 | IN2 — Logic input for channel 2 (LV-TTL) |
| Broche 3 | EN — Enable input (active high, gates both outputs) |
| Broche 4 | GND — Ground reference |
| Broche 5 | OUT2 — Gate drive output for channel 2 |
| Broche 6 | VDD — Supply voltage (4.5 V to 20 V) |
| Broche 7 | OUT1 — Gate drive output for channel 1 |
| Broche 8 | NC — Not connected (per datasheet) |
Applications typiques
2EDN7534FXTMA1 convient pour 6 applications: Telecom 48V Isolated DC-DC Converters, Server Point-of-Load (POL) Synchronous Buck, Industrial Motor Drive Low-Side Switches, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Boost Stage, GaN HEMT Synchronous Rectifier Drive.
Telecom 48V Isolated DC-DC Converters
The 2EDN7534FXTMA1 is well-suited for telecom 48 V bus isolated DC-DC converters where it drives the primary-side low-side MOSFET in a hard-switched full-bridge or half-bridge topology. Its 5 A peak source/sink output current enables nanosecond-class switching transitions even on high-Qg primary MOSFETs, while the 19 ns propagation delay preserves PWM edge fidelity in feedback loops operating above 500 kHz. The active output clamping to VDD protects the gate of sensitive GaN primary switches from Vgs overshoot caused by transformer leakage inductance. Designers place the driver close to the MOSFET with a 100 nF + 1 µF VDD bypass to minimize the gate-drive power loop inductance, which would otherwise cause ringing and EMI in the 100 MHz range.
Recommandé
Server Point-of-Load (POL) Synchronous Buck
In server and datacom point-of-load (POL) synchronous buck converters, the 2EDN7534FXTMA1 drives the low-side synchronous rectifier MOSFET with matched dual-channel timing that simplifies dead-time control. Its 5 A sink current rapidly discharges the low-side MOSFET gate capacitance during turn-off, minimizing body-diode conduction losses and improving efficiency at high switching frequencies (1 MHz+). The active output clamping ensures the gate voltage never overshoots VDD, which is critical when driving logic-level MOSFETs in 12 V input POL stages. Tight channel-to-channel timing also supports multi-phase parallel converter topologies where phase-current balancing depends on matched low-side drive waveforms.
Recommandé
Industrial Motor Drive Low-Side Switches
In industrial motor drive low-side H-bridge configurations, the 2EDN7534FXTMA1 drives the low-side IGBTs or MOSFETs with 5 A peak gate current and -12 V to +22 V input tolerance that survives the harsh electrical environment of motor inverters. The dual-channel design enables direct drive of both low-side switches in a single-phase H-bridge leg, reducing BOM count and PCB area. Its 19 ns propagation delay and matched channel timing ensure clean PWM switching of motor phase currents at 20-50 kHz PWM carrier frequencies. Under-voltage lockout (UVLO) protects the gate drive from insufficient VDD during power-up, preventing partial-turn-on of the power switches that would otherwise dissipate excessive switching losses.
Recommandé
Class-D Audio Amplifier Output Stage
The 2EDN7534FXTMA1 drives the low-side MOSFETs in Class-D audio amplifier output stages where its 5 A peak current and sub-50 ns total switching time minimize dead time and reduce total harmonic distortion (THD). The dual-channel architecture is ideal for full-bridge output stages where matched low-side drive timing prevents DC offset on the speaker output. Its 19 ns propagation delay is consistent across temperature, preserving phase alignment of the differential PWM signals that drive the speaker. The 4.5 V to 20 V VDD range covers typical amplifier bus voltages of 12-18 V used in automotive and prosumer audio applications.
Recommandé
Solar Inverter DC-DC Boost Stage
In solar inverter DC-DC boost converter stages, the 2EDN7534FXTMA1 drives the boost low-side switch MOSFET where its 5 A peak current and 20 V VDD capability handle the high gate charge of large-area 600 V/650 V MOSFETs used at multi-kW power levels. The active output clamping protects the gate oxide from overshoot caused by the boost inductor's parasitic capacitance during hard switching. The driver's -12 V to +22 V input tolerance survives ground bounce on the long gate-drive return paths typical of high-power solar inverters. The matched dual channels enable interleaved boost topologies that reduce input ripple and shrink magnetics.
Recommandé
GaN HEMT Synchronous Rectifier Drive
The 2EDN7534FXTMA1 is qualified to drive GaN HEMT synchronous rectifiers in high-frequency LLC and totem-pole PFC converters where its active output clamping to VDD prevents Vgs overshoot that would damage the sensitive GaN gate. Its 5 A source/sink capability charges and discharges typical 5-10 nC GaN gate charges in under 5 ns, supporting MHz-class switching frequencies. The 19 ns propagation delay is consistent across the -40 °C to +125 °C operating range, preserving converter timing margin in thermally challenging designs. The 8-pin PG-DSO package with exposed thermal pad supports high-density SMT layouts where GaN FETs are placed in close proximity to the driver.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour 2EDN7534FXTMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | 2EDN7533FXTMA1 | 2EDN7534FXTMA1-Q | 1EDN8511BXUSA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8 | PG-DSO-8 - same | PG-DSO-8 - same | PG-DSO-8 - same |
| Number of Channels | 2 | 2 | 2 | 1 |
| Peak Output Current | 5 A | 5 A | 5 A | 5 A |
| Supply Voltage (VDD) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V |
| Propagation Delay (typ.) | 19 ns | 19 ns | 19 ns | 20 ns |
| Output Polarity | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Enable Pin | Yes | Yes | Yes | Yes |
| Automotive Grade | No (Q variant is AEC-Q100) | No | Yes (AEC-Q100) | No |
| Approx. Unit Price (qty-1) | $1.65 | $1.60 | $2.40 (Q grade premium) | $1.45 |
Principaux différenciateurs
- Dual 5 A channels in PG-DSO-8 with independent inputs (vs 1EDN8511BXUSA1)
- Active output voltage clamping to VDD (vs UCC27517 (TI))
- Wide input voltage tolerance (-12 V to +22 V) (vs typical 4 A drivers)
Notes de conception
Minimize the gate-drive power loop inductance by placing the 2EDN7534FXTMA1 within 5 mm of the driven MOSFET gate pin. Use a wide (>=0.5 mm) gate-drive trace and a ground return trace running in parallel directly underneath. Place a 100 nF X7R ceramic bypass capacitor directly at the VDD pin (pin 6) and a 1 µF X7R bulk capacitor within 3 mm. Without this layout discipline, parasitic inductance in the gate loop will cause Vgs overshoot that the active clamp must absorb, dissipating energy in the driver and possibly damaging the MOSFET gate oxide. Estimate: a 10 nH loop inductance at 5 A in 5 ns develops V = L·di/dt = 10 V, easily exceeding typical 20 V MOSFET Vgs ratings.
The PG-DSO-8 package dissipates gate-drive losses primarily through the exposed thermal pad to PCB copper. At a switching frequency of 1 MHz and gate charge Qg = 50 nC per channel (typical for a 100 V MOSFET), the gate-drive power loss per channel is P = VDD × Qg × fsw = 12 V × 50 nC × 1 MHz = 0.6 W. With both channels active and VDD = 15 V, total dissipation can exceed 1.5 W. Estimated: thermal resistance theta_JA of PG-DSO-8 on a standard 4-layer 1 oz JEDEC test board is approximately 60-80 °C/W, giving a 90-120 °C rise above ambient. Use at least 100 mm² of top-layer copper area connected to the exposed pad to keep junction temperature below 125 °C.
Do not exceed the absolute maximum VDD of 20 V; transient overshoot from a poorly decoupled bootstrap supply can latch-up the output stage. The enable pin (EN, pin 3) must be driven high before the input pins begin switching; leaving EN floating or pulled low during power-up will leave outputs in a high-impedance state. The NC pin (pin 8) must be left floating - do not connect it to GND or VDD as internal bonding may share substrate connections. When driving GaN HEMTs, add a small gate-source resistor (5-10 Ω) to dampen the very high dV/dt induced gate ringing that can cause false turn-on.
For dual-channel synchronous rectifier drive, route the two output traces with matched length (delta <2 mm) and identical via count to preserve channel-to-channel delay matching specified in the datasheet. Mismatch beyond ~3 mm introduces ~20 ps of additional skew, which at 1 MHz switching frequency represents 0.002% timing error but becomes significant in MHz-class designs where dead times are <50 ns. Keep the input traces (IN1, IN2, EN) away from the output traces and any switching-node traces to prevent capacitive coupling that can cause output glitches during high-side switching transitions.
Informations de conformité
RoHS and REACH compliant per Infineon product page. Standard variant is not AEC-Q100 qualified; choose 2EDN7534FXTMA1-Q for automotive. Halogen-free status not explicitly stated in the verified data.
