BSO613SPVGXUMA1 - P-Ch 60V 3.44A MOSFET | Infineon | Load Switch
Référence : BSO613SPVGXUMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.91 | $1,91 |
| 10 | $1.72 | $17,20 |
| 100 | $1.42 | $142,00 |
| 500 | $1.18 | $590,00 |
| 1 000 | $0.98 | $980,00 |
BSO613SPVGXUMA1 Présentation
A P-channel MOSFET is a type of field-effect transistor whose majority carriers are holes (positive charge), making it inherently suitable for high-side switching without a charge pump. Within the broader taxonomy, the BSO613SPVGXUMA1 belongs to the power MOSFET family, which itself is a subset of discrete semiconductors and transistors. P-channel devices simplify gate drive in load-switch topologies because a logic-low signal turns the device on, eliminating the need for a bootstrap or charge-pump circuit required by equivalent N-channel high-side switches.
Key specifications include a maximum drain-source voltage (VDS) of -60 V, continuous drain current of -3.44 A at TA, pulsed drain current (per datasheet pulse curve) of significantly higher amplitude, and gate threshold voltage in the -1 V to -2.5 V range for standard logic-level drive. The PG-DSO-8-6 (Power-SO-8, 6 active pins) package exposes the drain tab for top-side cooling, offering low thermal resistance when mounted on adequate copper pour. The device is fully RoHS compliant and rated for industrial operating temperature.
Architecturally, the BSO613SPVGXUMA1 uses Infineon's trench-cell OptiMOS process which minimizes Rds(on) per unit silicon area, reducing conduction losses in continuous-current paths. The avalanche-rated body diode supports inductive switching, and the part is qualified to MSL3 (Moisture Sensitivity Level 3) per JEDEC J-STD-020, suitable for standard SMT assembly lines.
Typical applications include load switching in industrial 24 V / 48 V bus systems, USB power-distribution switches, battery management systems for portable equipment, motor-direction reversal in H-bridge low-side legs, and general power-ORing. The P-channel polarity also makes it ideal for reverse-polarity protection on DC input rails.
When designing with this device, ensure the gate is pulled to source (or to a positive voltage above VGS(th)) during off-state to prevent accidental turn-on, and provide adequate copper area on the drain tab for thermal dissipation. Logic-level gate drive simplifies direct connection to microcontroller GPIO pins for low-frequency switching.
Alternatives de remplacement direct pour BSO613SPVGXUMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec BSO613SPVGXUMA1 (même facteur de forme et même empreinte) — différant par Package, FET Type, Technology, Operating Temperature Range, MSL Level.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BSO613SPV
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSP135H6327XTSA1
✅ Remplacement direct✓ En stock
$0.43 / unité
Voir la fiche technique →BSP135H6906XTSA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.78 / unité
Voir la fiche technique →BSO150N03MDGXUMA1
✅ Remplacement direct✓ En stock
$0.37 / unité
Voir la fiche technique →BSD214SNH6327XTSA1
✅ Remplacement direct✓ En stock
$0.27 / unité
Voir la fiche technique →BSS127H6327XTSA2
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.032 / unité
Voir la fiche technique →BSO613SPVGXUMA1 Valeurs maximales et caractéristiques électriques
| FET Type | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TA=25C | -3.44 A |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| Boîtier | PG-DSO-8-6 (Power-SO-8) |
| Type de montage | Surface Mount |
| Technology | OptiMOS (Trench) |
| Plage de température de fonctionnement | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| Niveau MSL | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Avalanche Rated | Yes (per Infineon OptiMOS family) |
| Nombre de broches | 8 (6 active, 2 thermal/NC) |
Configuration des broches de BSO613SPVGXUMA1
| Broche 1 | Source — Source connection (pin 1 of 8-pin Power-SO-8) |
| Broche 2 | Source — Source connection |
| Broche 3 | Source — Source connection |
| Broche 4 | Gate — Gate drive input |
| Broche 5 | Drain — Drain / thermal tab |
| Broche 6 | Drain — Drain / thermal tab |
| Broche 7 | Drain — Drain / thermal tab |
| Broche 8 | Drain — Drain / thermal tab |
Applications typiques
BSO613SPVGXUMA1 convient pour 6 applications: 24V Industrial Load Switch, USB VBUS Power Switch, Battery Protection / Reverse Polarity, Motor Direction H-Bridge Low-Side, Hot-Swap Insertion / Inrush Limiter, Power ORing / Redundant Supply.
24V Industrial Load Switch
The BSO613SPVGXUMA1 is ideal for 24 V industrial bus load switching because its -60 V VDS rating provides 2.5x headroom above nominal 24 V, tolerating load-dump transients on factory power rails per IEC 61131-2. The P-channel topology allows direct connection to a 3.3 V or 5 V microcontroller GPIO for enable/disable control without a charge pump. At 1 A continuous load on a typical 24 V system, the part dissipates only a fraction of a watt thanks to its OptiMOS trench technology, eliminating the need for a heatsink in most designs.
Recommandé
USB VBUS Power Switch
The BSO613SPVGXUMA1's P-channel configuration and 3.44 A continuous current rating make it a strong candidate for USB Type-A and Type-C VBUS power-distribution switches in hubs and chargers. A logic-low GPIO signal from the USB controller directly enables the switch, eliminating the bootstrap capacitor required by N-channel high-side alternatives. With its -60 V VDS rating the part also tolerates USB-PD 20 V profiles with generous headroom, and the PG-DSO-8-6 Power-SO-8 footprint handles the thermal load of 3 A continuous current when mounted on 1 oz copper pour.
Recommandé
Battery Protection / Reverse Polarity
In battery packs and DC input rails the BSO613SPVGXUMA1 provides reverse-polarity protection by placing the P-channel device between the battery negative and the load return; if the battery is reversed, the gate-source voltage becomes positive and the MOSFET stays off, blocking current flow. The -60 V rating supports multi-cell battery stacks up to 12S Li-ion (50.4 V nominal) with margin, and the 3.44 A continuous rating covers most e-bike, power-tool, and portable-equipment discharge currents. Low Rds(on) minimizes the voltage drop and self-heating during normal discharge.
Recommandé
Motor Direction H-Bridge Low-Side
For small brushed DC motors up to 3 A, the BSO613SPVGXUMA1 serves as a low-side switch in H-bridge configurations, paired with a complementary high-side device. Its OptiMOS technology minimizes conduction losses during PWM switching at 20-50 kHz, and the avalanche-rated body diode handles back-EMF from inductive loads without external freewheeling diodes in low-current designs. The PG-DSO-8-6 package's exposed thermal tab keeps junction temperature low even at 3 A continuous.
Recommandé
Hot-Swap Insertion / Inrush Limiter
The BSO613SPVGXUMA1 enables controlled hot-swap insertion on 24 V / 48 V backplanes where the P-channel device sits in the return path and is initially biased off by a gate pull-up, then turned on slowly via a gate RC network to limit inrush current into discharged bulk capacitors. The -60 V VDS provides comfortable margin above 48 V nominal rails, and the 3.44 A continuous rating covers most plug-in card power budgets. The avalanche rating handles the inductive kick if the load is suddenly disconnected mid-current.
Recommandé
Power ORing / Redundant Supply
The BSO613SPVGXUMA1 in a back-to-back P-channel configuration (common-drain) provides power ORing between two redundant DC supplies, ensuring the higher-voltage source feeds the load while preventing reverse conduction into the lower source. The -60 V rating covers telecom 48 V rails and industrial 24 V systems, and the low Rds(on) keeps diode-OR losses low (replacing Schottky ORing diodes for higher efficiency). The P-channel topology permits direct ORing control without gate-drive isolation.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BSO613SPVGXUMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BSO613SPV | BSP135H6327XTSA1 | BSP135H6906XTSA1 | BSO150N03MDGXUMA1 | BSD214SNH6327XTSA1 | BSS127H6327XTSA2 |
|---|---|---|---|---|---|---|---|
| Package | PG-DSO-8-6 (Power-SO-8) | PG-DSO-8-6 (Power-SO-8) - same | PG-DSO-8-6 (Power-SO-8) - same | PG-DSO-8-6 (Power-SO-8) - same | PG-DSO-8-6 (Power-SO-8) - same | PG-DSO-8-6 (Power-SO-8) - same | PG-DSO-8-6 (Power-SO-8) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| FET Type (Polarity) | P-Channel | P-Channel | P-Channel (N-ch equivalent part exists separately) | P-Channel | N-Channel | N-Channel | N-Channel (depletion) |
| Drain-Source Voltage (VDS) | -60 V | -60 V | -100 V | -100 V | 30 V (N-ch) | 20 V (N-ch) | 600 V (N-ch depletion) |
Principaux différenciateurs
- P-channel topology eliminates high-side gate drive complexity (vs BSO150N03MDGXUMA1 (N-channel in same package))
- Higher VDS rating for industrial 24V/48V transient tolerance (vs BSD214SNH6327XTSA1 (20V N-channel))
- Higher continuous current for power-load applications (vs BSP135H6327XTSA1 (P-channel -100V))
Notes de conception
The PG-DSO-8-6 Power-SO-8 package relies on the top-side drain tab and PCB copper pour for heat dissipation. Estimated: at 3 A continuous drain current with 100 mOhm Rds(on), conduction loss is approximately 0.9 W. On a standard 1 oz FR4 test board (JEDEC EIA/JESD51), theta_JA is roughly 50 C/W, producing a 45C junction temperature rise above ambient. For sustained operation near 3 A, recommend at least 1 square inch of drain-tab copper pour on top and bottom layers with thermal vias to spread heat.
Route the gate trace as a short, narrow track directly from the GPIO pin to pin 4, with a 100 ohm gate-series resistor placed close to the MOSFET gate to dampen ringing from the gate-source capacitance. Keep the source return path wide and short to minimize parasitic inductance that causes VDS overshoot during turn-off. The drain tab copper area should be maximized with thermal vias (0.3 mm drill, 0.5 mm pitch) tying top, inner, and bottom copper planes together.
Do not exceed the maximum gate-source voltage (typically +/-20 V for Infineon Power-SO-8 MOSFETs) - exceeding VGS(max) will puncture the gate oxide and permanently damage the device. When using a P-channel MOSFET for high-side switching, ensure the gate is actively pulled above source voltage during off-state; a floating gate can pick up noise and partially turn on the device, causing shoot-through in half-bridge configurations.
Estimated: P-channel high-side switching using the BSO613SPVGXUMA1 dissipates approximately VDS * ID during conduction. At 24 V supply switching 1 A continuous load to a 24 V output, conduction loss = I^2 * Rds(on). With Rds(on) of approximately 100 mOhm at VGS=-10 V, loss is 0.1 W - negligible. However, switching loss during PWM operation depends on switching frequency; at 25 kHz with typical gate charge of ~20 nC, gate-drive loss is approximately 0.5 mW per cycle.
Informations de conformité
RoHS and lead-free confirmed per Infineon product page and DigiKey listing. AEC-Q100 automotive qualification not stated in available data - industrial grade. Halogen-free status not explicitly stated in verified web data.
