IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
Référence : IAUC120N04S6L009ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.95 | $2,95 |
| 10 | $2.65 | $26,50 |
| 100 | $2.3 | $230,00 |
| 500 | $2.05 | $1 025,00 |
| 1 000 | $1.85 | $1 850,00 |
| 3 000 | $1.65 | $4 950,00 |
IAUC120N04S6L009ATMA1 Présentation
Background: A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that regulates current flow between drain and source terminals. OptiMOS-6 is Infineon's sixth-generation 40 V trench MOSFET platform optimized for low R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit. Within the broader taxonomy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. In modern 12 V/24 V automotive and industrial systems, low-R<sub>DS(on)</sub> 40 V N-channel MOSFETs sit at the lowest level of the power-conversion hierarchy, immediately driving solenoids, motors, and synchronous-rectifier stages.
Key features of the IAUC120N04S6L009ATMA1 include 0.9 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, logic-level compatible V<sub>GS(th)</sub> suitable for direct GPIO drive from microcontrollers, 150 A pulsed drain current capability, and an operating junction temperature range of -55 °C to +175 °C. The leadless PG-TDSON-8-34 package provides a very low package resistance and inductance contribution and a top-side exposed pad for efficient PCB thermal spreading.
Typical applications span 12 V/24 V automotive high-current switching - including electronic power steering (EPS), brake-by-wire electro-hydraulic actuators, fuel-injection solenoids, and high-current DC/DC converters for 48 V-to-12 V or 24 V-to-12 V rails. The very low R<sub>DS(on)</sub> directly translates into reduced conduction loss, lower junction temperature rise, and therefore higher continuous current capability on the same PCB footprint.
When designing with this part, the V<sub>GS</sub> drive level must be considered - the maximum R<sub>DS(on)</sub> is specified at V<sub>GS</sub>=10 V, and the device remains fully enhanced at logic levels near 4.5 V. Designers should also observe the safe operating area boundary to avoid exceeding avalanche energy during turn-off of inductive loads. This page synthesizes distributor pricing, automotive-grade alternatives, and practical design considerations that are not compiled on a single manufacturer page.
This page synthesizes distributor pricing, automotive-qualified drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone. AEC-Q101 qualification, PG-TDSON-8-34 footprint, and 40 V / 120 A headline ratings are sourced from the manufacturer product page and authorized distributor listings.
Alternatives de remplacement direct pour IAUC120N04S6L009ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUC120N04S6L009ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Automotive Qualification, Operating Junction Temperature, MSL Level.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUC120N04S6L005ATMA1
✅ Remplacement direct✓ En stock
$0.92 / unité
Voir la fiche technique →IAUC120N06S5L032ATMA1
✅ Remplacement direct✓ En stock
$0.82 / unité
Voir la fiche technique →IAUCN04S7L019ATMA1
✅ Remplacement direct✓ En stock
$0.48 / unité
Voir la fiche technique →IAUC60N04S6L039ATMA1
✅ Remplacement direct✓ En stock
$0.72 / unité
Voir la fiche technique →IAUC120N04S6L009ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-6 40V |
| Type de transistor | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 150 A (per datasheet header) |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΩ |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | 150 W |
| Température de jonction en fonctionnement | -55 °C to +175 °C |
| Boîtier | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| Type de montage | Surface Mount |
| Nombre de broches | 8 |
| AEC-Q101 Automotive Qualification | Yes |
| Statut RoHS | Compliant |
Configuration des broches de IAUC120N04S6L009ATMA1
| Broche 1 | Gate — Gate input - drive with 10 V for full enhancement, logic-level compatible |
| Broche 2 | Source — Source connection (low-side return) |
| Broche 3 | Source — Source connection (low-side return) |
| Broche 4 | Drain — Drain connection (load side) |
| Broche 5 | Drain — Drain connection (load side) |
| Broche 6 | Drain (Exposed Pad) — Drain and thermal pad - solder to PCB copper pour for thermal dissipation |
| Broche 7 | Source — Source connection (low-side return) |
| Broche 8 | Source — Source connection (low-side return) |
Zone de fonctionnement sûr - DC
Applications typiques
IAUC120N04S6L009ATMA1 convient pour 6 applications: Automotive Electronic Power Steering (EPS), 12 V/24 V Automotive Solenoid and Relay Drive, High-Current 24 V to 12 V DC-DC Buck Converter, Automotive Braking System Actuator Drive, Industrial 24 V Brushless DC Motor Drive, Automotive LED Headlight Driver Output Stage.
Automotive Electronic Power Steering (EPS)
The IAUC120N04S6L009ATMA1 fits EPS motor-drive stages because it delivers 120 A continuous drain current with 0.9 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, directly reducing I²R conduction loss in the high-side and low-side FETs of the H-bridge. With 40 V V<sub>DS</sub> the part provides comfortable margin above the 35 V worst-case 12 V load-dump transient, and AEC-Q101 qualification is mandatory for safety-relevant steering. Compared with discrete 30 mΩ FETs, the IAUC120N04S6L009ATMA1 cuts conduction loss ~30x at 100 A PWM duty, allowing smaller heatsinking or higher continuous torque. Recommended companion parts: gate-driver ICs and TVS suppression for inductive clamp.
Recommandé
12 V/24 V Automotive Solenoid and Relay Drive
Solenoid drivers for transmission shift solenoids, fuel injectors, and active suspension valves benefit from the IAUC120N04S6L009ATMA1's low 0.9 mΩ R<sub>DS(on)</sub> and 150 A pulsed drain current rating. The 40 V V<sub>DS</sub> rating tolerates 24 V bus load-dump transients up to 35 V with proper TVS clamping, and the PG-TDSON-8-34 5x6 mm footprint enables compact PCB designs. Logic-level V<sub>GS(th)</sub> permits direct drive from 3.3 V or 5 V microcontrollers through a small gate-driver stage, eliminating the need for charge pumps. Use a flyback diode or active clamp across the solenoid to dissipate inductive turn-off energy within the FET's SOA.
Recommandé
High-Current 24 V to 12 V DC-DC Buck Converter
In 24 V-input buck converters targeting 12 V/20 A output rails, the IAUC120N04S6L009ATMA1 is suitable as the high-side control FET because its 40 V V<sub>DS</sub> provides margin above 24 V nominal plus switching spikes, and 0.9 mΩ R<sub>DS(on)</sub> keeps conduction loss below 1% of total power at full load. The PG-TDSON-8-34 5x6 mm package with exposed thermal pad allows direct PCB heat spreading without external heatsinks at moderate duty cycles. Compared with conventional 40 V MOSFETs at 3 mΩ, this part reduces full-load losses by ~70%, simplifying thermal design. Pair with a dedicated 40 V synchronous rectifier for the low-side position.
Recommandé
Automotive Braking System Actuator Drive
Brake-by-wire electro-hydraulic actuators and ABS pump motors require MOSFETs that combine high continuous current, low conduction loss, and AEC-Q101 qualification - all met by the IAUC120N04S6L009ATMA1. Its 0.9 mΩ R<sub>DS(on)</sub> minimises I²R loss at 60-80 A continuous ABS pump currents, while the 150 A pulsed rating handles motor inrush and stall currents without tripping SOA. The -55 °C to +175 °C junction temperature range covers underhood environments, and the 5x6 mm TDSON package keeps the PCB footprint compact for ECU integration. Always add a TVS clamp across the motor terminal to clamp recirculation energy during PWM switching.
Recommandé
Industrial 24 V Brushless DC Motor Drive
Outside automotive, the IAUC120N04S6L009ATMA1 also fits industrial 24 V BLDC motor drives such as robotics actuators and small AGV wheel motors. With 120 A continuous current and 0.9 mΩ R<sub>DS(on)</sub>, three-phase inverters built around this part can deliver 5-10 kW continuous mechanical output on a 24 V bus. The 40 V V<sub>DS</sub> rating tolerates 24 V rectified plus switching transients, while logic-level gate threshold allows direct 3.3 V MCU drive through a gate driver. Designers should add bootstrap capacitors for the high-side FETs and a current-sense amplifier on the low-side return path for closed-loop torque control.
Recommandé
Automotive LED Headlight Driver Output Stage
High-power automotive LED headlight drivers use synchronous buck or boost topologies where the IAUC120N04S6L009ATMA1's 0.9 mΩ R<sub>DS(on)</sub> and 40 V V<sub>DS</sub> are ideal for the main switching FET. With 120 A continuous current and AEC-Q101 qualification, the same part can drive the high-current LED string or the buck-side FET in a 12 V-to-9 V 10 A LED driver. Compared with 5 mΩ FETs, the IAUC120N04S6L009ATMA1 cuts switching loss ~5x at full load, improving overall efficiency and reducing headlight thermal load. Add a temperature sensor and current-sense amplifier for closed-loop brightness control.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUC120N04S6L009ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUC120N04S6L005ATMA1 | IAUC120N06S5L032ATMA1 | IAUCN04S7L019ATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same |
| V_DS (V) | 40 | 40 | 60 | 40 | 40 |
| R_DS(on) max @ 10V (mΩ) | 0.9 | 0.5 | 3.2 | 1.9 | 3.9 |
| Generation | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-7 | OptiMOS-6 |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Lowest R<sub>DS(on)</sub> at 120 A in the Infineon 40 V OptiMOS-6 5x6 mm family (vs IAUC60N04S6L039ATMA1)
- Lower R<sub>DS(on)</sub> than L005 in cost-optimised designs (vs IAUC120N04S6L005ATMA1)
- Automotive-grade OptiMOS-6 technology with proven AEC-Q101 reliability (vs IAUCN04S7L019ATMA1 (OptiMOS-7))
Notes de conception
Estimated: at continuous I<sub>D</sub>=60 A on a 4-layer 1 oz PCB with 4 sq-in copper pour, the IAUC120N04S6L009ATMA1 dissipates P=I²R = 60² × 0.0009 = 3.24 W, giving a junction-to-ambient rise of roughly 35-50 °C depending on PCB layout. To sustain the full 120 A continuous rating the design must add a forced-air cooling or large copper pour (>= 8 sq-in). Never exceed 150 W at T<sub>C</sub>=25 °C - the system thermal design must keep T<sub>C</sub> well below 100 °C for AEC-Q101 reliability margin.
Layout the PG-TDSON-8-34 with the bottom exposed pad (pin 6, drain) soldered to a continuous copper pour on the top and inner PCB layers, stitched with multiple thermal vias (>= 9 vias, 0.3 mm drill) to inner copper planes. Keep the high-current drain trace short and wide (>5 mm) to minimise parasitic inductance that would otherwise cause V<sub>DS</sub> overshoot during turn-off. Place the gate-driver within 5 mm of the gate pin to limit gate-loop inductance, which is critical for clean switching at 100 kHz+ PWM frequencies.
Do not assume 0.9 mΩ R<sub>DS(on)</sub> is achieved at logic-level V<sub>GS</sub>=3.3 V - the datasheet R<sub>DS(on)</sub> spec uses V<sub>GS</sub>=10 V, and at 4.5 V the on-resistance is significantly higher. Always drive the gate to 10 V for full enhancement; use a gate-driver IC rather than direct GPIO drive to ensure fast switching and avoid shoot-through in half-bridge configurations. Add a TVS clamp (e.g., 36 V SMAJCA series) for 24 V load-dump protection - the 40 V V<sub>DS</sub> alone is not enough margin under worst-case transients.
Place a 10 kΩ gate-source pull-down resistor to keep the gate off during MCU power-up or reset - this prevents inadvertent turn-on from floating gate leakage. For half-bridge configurations use a dedicated gate-driver IC with built-in dead-time control to prevent shoot-through between high-side and low-side FETs. For switching frequencies above 50 kHz, add a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source to damp V<sub>DS</sub> ringing caused by package + PCB parasitic inductance.
Informations de conformité
AEC-Q101 (NOT AEC-Q100) qualified per Infineon product page. RoHS and REACH compliant. Halogen-free status not explicitly stated in provided web data - mark unknown per data authenticity rules.
