IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
Référence : IAUZ20N08S5L300ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.28 | $128,00 |
| 500 | $1.05 | $525,00 |
| 1 000 | $0.92 | $920,00 |
| 3 000 | $0.81 | $2 430,00 |
IAUZ20N08S5L300ATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or regulate current in power electronics. It belongs to the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs, and is the workhorse of modern switch-mode power supplies (SMPS), motor drives, and load switches. OptiMOS-5 is Infineon's fifth-generation trench MOSFET platform, delivering lower Rds(on) per unit silicon area, faster switching, and lower figure-of-merit (FOM = Rds(on) x Qg) than prior generations.
Key features include an 80 V drain-source breakdown voltage suitable for 12 V and 24 V automotive buses (including 48 V mild-hybrid transients up to 80 V), a 175°C maximum operating junction temperature, and AEC-Q101 qualification for automotive use. The combination of low Rds(on) (30 mΩ) and small S3O8 footprint (3.3 x 3.3 mm) enables high power density designs. Compared to standard MOSFETs, OptiMOS-5 reduces switching losses by roughly 30-50%, which directly translates to higher efficiency and lower thermals in the same board area.
Typical applications include LED lighting drivers, automotive powertrain ECUs, body-electronics modules, battery protection circuits in 12 V/24 V systems, and high-side/low-side buck or half-bridge converters. The combination of low charge and small package is particularly attractive in DC-DC converters where switching losses dominate efficiency at high frequencies.
When designing with this part, keep the gate-drive voltage at 10 V to fully enhance the channel and achieve the rated 30 mΩ Rds(on). At lower gate voltages (e.g., 4.5 V), Rds(on) increases significantly and can cause thermal runaway. Always observe the 175°C junction temperature limit and provide adequate copper cooling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, with all values cross-referenced against distributor listings and the Infineon part page.
Alternatives de remplacement direct pour IAUZ20N08S5L300ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUZ20N08S5L300ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Junction Temperature, MSL Level, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUZ40N08S5N100ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.71 / unité
Voir la fiche technique →IAUC28N08S5L230ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.71 / unité
Voir la fiche technique →IAUC64N08S5L075ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.58 / unité
Voir la fiche technique →BSC052N08NS5ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.52 / unité
Voir la fiche technique →BSC123N08NS3GATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.71 / unité
Voir la fiche technique →IAUZ20N08S5L300ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-5 |
| Polarity | N-Channel |
| Drain-Source Voltage (Vds) | 80 V |
| Continuous Drain Current (Id) | 20 A (Tc) |
| Power Dissipation (Pd) | 30 W (Tc) |
| On-State Resistance (Rds(on)) | 30 mΩ @ 10 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | ±20 V (max Vgs rating) |
| Input Capacitance (Ciss) | 599 pF @ 40 V |
| Total Gate Charge (Qg) | 10.5 nC @ 10 V |
| Température de jonction en fonctionnement | -55°C to +175°C |
| Boîtier | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm |
| Type de montage | Surface Mount |
| Qualification | AEC-Q101 (automotive) |
| Technology | Trench MOSFET (OptiMOS-5) |
| Statut RoHS | Compliant |
Configuration des broches de IAUZ20N08S5L300ATMA1
| Broche 1 | Source — Source connection (internally tied to pins 1-7 and exposed pad region) |
| Broche 2 | Source — Source connection |
| Broche 3 | Source — Source connection |
| Broche 4 | Source — Source connection |
| Broche 5 | Source — Source connection |
| Broche 6 | Source — Source connection |
| Broche 7 | Source — Source connection |
| Broche 8 | Gate — Gate drive input (Vgs ±20 V max) |
Zone de fonctionnement sûr (DC, Tc=25°C)
Applications typiques
IAUZ20N08S5L300ATMA1 convient pour 7 applications: Automotive LED Lighting Drivers, 48V Mild-Hybrid DC-DC Converters, Battery Management & Protection, Body Electronics & Load Switches, Industrial 24V Solenoid & Relay Drivers, USB-PD & High-Current Type-C Power Paths, E-Bike & Light Electric Vehicle Power Stages.
Automotive LED Lighting Drivers
The IAUZ20N08S5L300ATMA1 fits automotive LED headlight and DRL driver stages because its 80 V Vds rating tolerates 24 V bus transients including load-dump events up to 35 V. The 30 mΩ Rds(on) at 10 V Vgs keeps conduction losses below 1.5 W at typical LED-string currents of 5-7 A, while the AEC-Q101 qualification ensures reliability across -40°C to +175°C automotive temperature ranges. The 3.3 x 3.3 mm S3O8 footprint enables compact driver layouts behind headlamp enclosures, and the 10.5 nC Qg supports PWM dimming frequencies above 1 kHz without significant switching losses.
Recommandé
48V Mild-Hybrid DC-DC Converters
For 48 V mild-hybrid buck and boost converters, the IAUZ20N08S5L300ATMA1 provides the headroom needed for transient voltages up to 80 V while maintaining a low 30 mΩ Rds(on). Its 10.5 nC Qg enables efficient switching at 200-500 kHz, allowing smaller magnetics in 48 V-to-12 V DC-DC stages. The PG-TSDSON-8-32 exposed-drain pad provides effective thermal dissipation for 30 W continuous operation, and the AEC-Q101 qualification meets automotive reliability requirements for powertrain modules mounted near the engine bay.
Recommandé
Battery Management & Protection
In 12 V and 24 V battery management systems, the IAUZ20N08S5L300ATMA1 serves as a high-side disconnect switch or load-dump protection element. The 80 V Vds rating handles jump-start and load-dump transients, while 20 A continuous drain current supports most automotive load channels. The 30 mΩ Rds(on) limits steady-state voltage drop to under 60 mV at 2 A, preserving battery capacity. Its OptiMOS-5 trench technology provides fast turn-off in fault conditions, critical for short-circuit protection in BMS architectures.
Recommandé
Body Electronics & Load Switches
The IAUZ20N08S5L300ATMA1 is well suited for body-electronics load switches controlling motors, solenoids, and resistive loads in door modules, seat controllers, and HVAC actuators. Its 80 V rating tolerates inductive flyback transients when switching solenoids or relays, eliminating the need for separate TVS clamp protection in many cases. The 20 A continuous current handles most body-electronics loads directly, and the 30 mΩ Rds(on) reduces I²R losses that would otherwise generate heat in confined modules. AEC-Q101 qualification ensures long-term reliability in underhood and cabin environments.
Recommandé
Industrial 24V Solenoid & Relay Drivers
Industrial 24 V solenoid and relay driver circuits benefit from the IAUZ20N08S5L300ATMA1's 80 V Vds margin, which absorbs inductive kickback without requiring external snubbers. The 20 A continuous drain current supports large solenoids used in hydraulics and process control, while the 30 mΩ Rds(on) keeps dissipation manageable even at sustained high currents. Although not automotive-qualified industrial applications use the same Infineon OptiMOS-5 technology, providing proven reliability. The PG-TSDSON-8-32 package is compatible with reflow soldering and high-density PCB layouts common in industrial controllers.
Recommandé
USB-PD & High-Current Type-C Power Paths
In USB Power Delivery and high-current Type-C power-path designs, the IAUZ20N08S5L300ATMA1 functions as the input protection or hot-swap MOSFET. Its 80 V Vds rating exceeds the 20 V maximum USB-PD voltage with substantial margin, and the 30 mΩ Rds(on) minimizes voltage drop on the VBUS line at 5 A (only 150 mV drop). The 10.5 nC Qg enables fast turn-on/off for OVP and OCP response under microseconds, and the 3.3 x 3.3 mm S3O8 footprint fits tightly on compact Type-C connector daughter boards.
Recommandé
E-Bike & Light Electric Vehicle Power Stages
Light electric vehicles such as e-bikes and e-scooters use 24 V to 48 V battery packs where the IAUZ20N08S5L300ATMA1 fits as a half-bridge switch in motor controllers. The 80 V Vds rating handles the back-EMF of brushless DC motors at full speed, while 20 A continuous current supports 250 W to 500 W motor power levels. The 30 mΩ Rds(on) keeps conduction losses below 3% at rated current, preserving battery range. The OptiMOS-5 fast switching characteristic reduces torque ripple at high PWM frequencies, improving ride smoothness.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUZ20N08S5L300ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUZ40N08S5N100ATMA1 | IAUC28N08S5L230ATMA1 | IAUC64N08S5L075ATMA1 | BSC052N08NS5ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-32 (S3O8) | PG-TSDSON-8-32 (S3O8) - same | PG-TSDSON-8-32 (S3O8) - same | PG-TSDSON-8-32 (S3O8) - same | PG-TSDSON-8-32 (S3O8) - same | PG-TSDSON-8-32 (S3O8) - same |
| Drain-Source Voltage (Vds) | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| On-State Resistance (Rds(on)) | 30 mΩ @ 10 A, 10 V | 100 mΩ | 23 mΩ | 7.5 mΩ | 5.2 mΩ | 12.3 mΩ |
| Technology | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-3 (older) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Principaux différenciateurs
- OptiMOS-5 technology provides best-in-class FOM (Rds(on) × Qg) (vs BSC123N08NS3GATMA1 (OptiMOS-3))
- Lower Rds(on) than higher-Rds(on) family alternatives (vs IAUZ40N08S5N100ATMA1 (100 mΩ))
- Balanced Rds(on)/Qg trade-off for switching applications (vs IAUC64N08S5L075ATMA1 (7.5 mΩ, higher Qg))
Notes de conception
Estimated: At 10 A continuous drain current with 30 mΩ Rds(on), conduction loss is I²R = 100 × 0.030 = 3 W. The PG-TSDSON-8-32 package has a typical RthJA of approximately 50°C/W on a 1 sq-inch copper pour (4-layer FR4). Junction temperature rise is therefore roughly 150°C above ambient, requiring either substantial copper cooling or operation below 10 A in high-temperature environments. For sustained 20 A operation, increase copper area to at least 2 sq inches or use forced airflow.
The exposed drain pad on the bottom of the PG-TSDSON-8-32 package is the primary thermal path and must be soldered to a PCB copper pour of at least 1 square inch on the top layer, with thermal vias connecting to inner and bottom copper planes. Use an array of 0.3 mm thermal vias on a 0.6 mm pitch. Insufficient thermal via density can increase junction-to-ambient thermal resistance by 30-50% and lead to thermal runaway. Source pins 1-7 should be connected to a unified ground copper pour to minimize source-inductance-induced ringing.
A common pitfall with the IAUZ20N08S5L300ATMA1 is driving the gate below the rated 10 V enhancement voltage. At Vgs = 4.5 V, Rds(on) increases by 2-3x, dramatically raising conduction losses. Always use a gate-driver IC capable of sourcing 10 V at the gate charge current required by 10.5 nC Qg within the desired switching time. Add a 10-100 Ω gate resistor to dampen parasitic ringing, and place the gate-driver as close to the MOSFET gate pin as possible (less than 5 mm trace length).
For switching applications, the high-current loop (input capacitor → MOSFET drain-source → output) must be minimized to reduce parasitic inductance. Use wide copper pours or planes, and place the input bypass capacitor within 2-5 mm of the drain pad. The gate-drive loop should be kept small and isolated from the power loop to avoid capacitive coupling of dv/dt into the gate, which can cause spurious turn-on. A ground pour directly under the MOSFET can reduce EMI by providing a low-impedance return path.
Informations de conformité
AEC-Q101 (automotive discrete) qualified per Infineon product page. RoHS and REACH compliant. Halogen-free per Infineon product family policy.
