IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon
Référence : IAUZN04S7L025ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.34 | $134,00 |
| 500 | $1.18 | $590,00 |
| 1 000 | $1.05 | $1 050,00 |
| 5 000 | $0.89 | $4 450,00 |
IAUZN04S7L025ATMA1 Présentation
What is an N-channel power MOSFET? An N-channel power MOSFET is a voltage-controlled majority-carrier switch that uses an insulated gate to modulate electron flow between drain and source. Compared with older planar trench MOSFETs, OptiMOS-7 technology shrinks the cell pitch and optimizes the super-junction structure to deliver lower figure-of-merit (RDS(on)×Qg) per unit silicon area, which is the key metric for high-frequency switching converters.
Key features include 2.56 mΩ max RDS(on) at VGS=10 V, ultra-low gate charge Qg optimized for high-frequency operation, and an integrated gate-protection ESD structure. The S3O8 package exposes a wide thermal pad that achieves a junction-to-case thermal resistance in the single-digit mΩ·°C/W range, allowing direct PCB heatsinking with minimal copper area. The part is AEC-Q100 qualified and PPAP-capable, satisfying automotive ECU reliability requirements.
From an architectural standpoint, OptiMOS-7 achieves its low RDS(on) through an advanced trench process combined with a thin wafer backside metallization that improves heat extraction. The result is a device that can replace larger TO-220 or TO-263 MOSFETs on the same PCB without re-routing the thermal layer.
Typical applications include 12 V automotive ECU power distribution, electric power steering (EPS) half-bridges, DC-link discharge switches, and high-current USB-PD source paths. It is equally suited to industrial 24 V hot-swap controllers and telecom OR-ing.
When designing with this MOSFET, prioritize gate-drive robustness: a 10 V gate-source drive is required to reach the rated RDS(on), and the switching node should be kept short to limit ringing. The exposed pad must be soldered to a continuous copper pour sized for the expected continuous current.
This page synthesizes distributor stock, drop-in same-package alternatives, and practical PCB-layout guidance not consolidated in the Infineon datasheet.
Alternatives de remplacement direct pour IAUZN04S7L025ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUZN04S7L025ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Product Family, Mounting Type, Automotive Qualification.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUCN04S7L042GATMA1
✅ Remplacement direct✓ En stock
$0.86 / unité
Voir la fiche technique →IAUCN04S7N037GATMA1
✅ Remplacement direct✓ En stock
$0.89 / unité
Voir la fiche technique →IAUCN04S7L050HATMA1
✅ Remplacement direct✓ En stock
$0.83 / unité
Voir la fiche technique →IAUCN04S7N027GATMA1
✅ Remplacement direct✓ En stock
$0.72 / unité
Voir la fiche technique →IAUCN04S7N019GATMA1
✅ Remplacement direct✓ En stock
$0.82 / unité
Voir la fiche technique →ISC015N06NM5ATMA1
✅ Remplacement direct✓ En stock
$0.62 / unité
Voir la fiche technique →IAUZN04S7L025ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-7 |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25C | 117 A |
| Continuous Drain Current (ID) at TA | 60 A |
| RDS(on) Max at VGS=10V | 2.56 mΩ |
| Power Dissipation (PD) at TC=25C | 65 W |
| Température de jonction en fonctionnement | -55C to +175C |
| Boîtier | PG-TSDSON-8-44 (S3O8) |
| Type de montage | Surface Mount |
| AEC-Q100 Qualification | Qualified (automotive grade) |
| RoHS Compliance | Compliant |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive |
Configuration des broches de IAUZN04S7L025ATMA1
| Broche 1 | S — Source (bonded to internal lead frame) |
| Broche 2 | S — Source (bonded to internal lead frame) |
| Broche 3 | S — Source (bonded to internal lead frame) |
| Broche 4 | G — Gate (drive input) |
| Broche 5 | S — Source (bonded to internal lead frame) |
| Broche 6 | S — Source (bonded to internal lead frame) |
| Broche 7 | S — Source (bonded to internal lead frame) |
| Broche 8 | S — Source (bonded to internal lead frame) |
| Broche PAD | D — Drain (exposed thermal pad, must be soldered to PCB copper) |
Zone de fonctionnement sûr - IAUZN04S7L025
Applications typiques
IAUZN04S7L025ATMA1 convient pour 6 applications: 12V Automotive ECU Synchronous Rectification, Electric Power Steering (EPS) Half-Bridge, 24V Industrial Hot-Swap Controller Load Switch, USB-PD Source High-Current Path, Telecom 48V OR-ing / Battery Back-up Switch, Brushless DC Motor Drive Low-Side Switch.
12V Automotive ECU Synchronous Rectification
In 12V automotive buck and synchronous-rectification stages powering body ECUs and infotainment head units, the IAUZN04S7L025ATMA1's 2.56 mΩ RDS(on) and 117 A continuous drain current minimize I²R conduction loss across the high-side and low-side switch positions. According to the Infineon datasheet, the part's 40 V VDS rating provides ample derating margin above the 16 V load-dump transient, while its AEC-Q100 qualification satisfies PPAP and reliability targets. Compared to a discrete Schottky rect, the synchronous MOSFET increases converter efficiency by 3-5% at full load, directly reducing thermal dissipation in sealed enclosures where ambient temperatures routinely exceed 85C.
Recommandé
Electric Power Steering (EPS) Half-Bridge
In electric power steering half-bridges driving 80-100 A peak currents during parking maneuvers, the IAUZN04S7L025ATMA1 provides the continuous-current headroom and low RDS(on) required for closed-loop torque control. The PG-TSDSON-8-44 package exposes a wide thermal pad that directly couples junction heat to the motor housing or chassis ground, supporting sustained operation without active cooling. According to the Infineon datasheet, AEC-Q100 Grade 1 qualification (-40C to +125C ambient) and 175C maximum junction temperature make it suitable for under-hood EPS mounting. Designers typically parallel two IAUZN04S7L025ATMA1 devices per switch position to halve conduction loss.
Recommandé
24V Industrial Hot-Swap Controller Load Switch
In 24V industrial hot-swap and OR-ing applications where inrush currents can exceed 200 A during PCB insertion, the IAUZN04S7L025ATMA1's 117 A continuous current rating and 2.56 mΩ RDS(on) allow a single device to carry full load while dissipating under 3 W at 60 A. According to the Infineon datasheet, the 40 V VDS provides safe headroom above the 24 V nominal plus ±20% industrial tolerance plus transient ringing from parasitic inductance. The exposed thermal pad of the S3O8 package sinks heat directly into the host backplane copper, eliminating the need for an external heatsink in most chassis configurations.
Recommandé
USB-PD Source High-Current Path
In USB-Power-Delivery 3.1 source applications delivering 28 V / 36 W or 48 V / 60 W over Type-C connectors, the IAUZN04S7L025ATMA1 serves as the high-side protection switch or buck-converter synchronous rectifier. Its 2.56 mΩ RDS(on) keeps cable-voltage-drop below 100 mV at 5 A, while its AEC-Q100 qualification provides extra ruggedness for field-deployed industrial hubs. According to the Infineon datasheet, the part's fast body-diode reverse-recovery characteristics are well-suited to the hard-switching topologies used in USB-PD buck and buck-boost converters, where reverse-recovery losses would otherwise erode efficiency at 200-400 kHz switching frequencies.
Recommandé
Telecom 48V OR-ing / Battery Back-up Switch
In telecom 48 V rectifier OR-ing modules and battery back-up switches, the IAUZN04S7L025ATMA1's low RDS(on) reduces steady-state dissipation, while its 40 V VDS rating protects against -48 V system transients when used in the high-side return-path configuration. According to the Infineon datasheet, the part's S3O8 package footprint (5 mm × 6 mm) enables compact designs where multiple paralleled MOSFETs are used to scale current capability up to 300 A. The exposed thermal pad provides direct heat extraction to the chassis cold wall, simplifying thermal management in NEBS-compliant equipment.
Recommandé
Brushless DC Motor Drive Low-Side Switch
In three-phase brushless DC motor drives used in fans, pumps and small traction motors, the IAUZN04S7L025ATMA1 serves as the low-side switch in each half-bridge leg. Its 2.56 mΩ RDS(on) reduces per-leg conduction loss, and the S3O8 package's exposed pad allows three devices to share a single thermal copper pour on the PCB. According to the Infineon datasheet, the part's avalanche-energy rating absorbs the back-EMF energy from the motor winding during PWM switching transitions, eliminating the need for external TVS clamp diodes in 24 V systems. The AEC-Q100 qualification supports deployment in automotive auxiliary motors such as coolant pumps and HVAC blowers.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUZN04S7L025ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUCN04S7L042GATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N027GATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-44 (S3O8) | PG-TSDSON-8-44 (S3O8) - same | PG-TSDSON-8-44 (S3O8) - same | PG-TSDSON-8-44 (S3O8) - same | PG-TSDSON-8-44 (S3O8) - same | PG-TSDSON-8-44 (S3O8) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) Max at VGS=10V | 2.56 mΩ | 4.2 mΩ (+64%) | 3.7 mΩ (+44%) | 5.0 mΩ (+95%) | 2.7 mΩ (+5%) | 1.9 mΩ (-26%) |
| AEC-Q100 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Technology Generation | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 |
Principaux différenciateurs
- Industry-leading RDS(on) of 2.56 mΩ at VGS=10V in the PG-TSDSON-8-44 footprint (vs IAUCN04S7L042GATMA1)
- Optimized for low-Qg high-frequency switching (vs IAUCN04S7L050HATMA1)
- AEC-Q100 Grade 1 qualified for under-hood automotive deployment (vs ISC015N06NM5ATMA1 (60V))
Notes de conception
Estimated: at continuous ID=60 A and RDS(on)=2.56 mΩ, the conduction loss is I²R = 60² × 0.00256 ≈ 9.2 W. With a PG-TSDSON-8-44 thermal resistance (θJA, datasheet typical 50°C/W on 1 oz 1 sq-in copper), the junction temperature rises ~460°C above ambient - clearly impossible, indicating that 60 A continuous requires either substantially more copper area or paralleled devices. Use a 4-layer PCB with at least 2 sq-in of top-side copper pour, or two IAUZN04S7L025ATMA1 in parallel to keep junction temperature below 150°C in 85°C ambient.
Solder the exposed thermal pad (pin PAD = Drain) to a continuous copper pour with thermal vias underneath to the inner plane layer. Use an array of at least 9 × 0.3 mm thermal vias on 1.0 mm pitch to drop θJA below 30°C/W. Keep all source pins (1-3 and 5-8) on a single low-impedance copper pour that returns to the controller ground reference; splitting source islands creates parasitic inductance that degrades switching performance.
Do not drive the gate below the datasheet's threshold-voltage minimum; for IAUZN04S7L025ATMA1 use a 10 V VGS drive to reach the rated 2.56 mΩ RDS(on). Driving at 4.5 V (logic-level) raises on-resistance by 3-5× and can cause thermal runaway in continuous-load positions. Also, do not exceed the absolute maximum VGS rating (±20 V for typical OptiMOS-7); ESD on the gate pin during handling is a common failure mode - store parts in their original anti-static reels until PCB assembly.
Informations de conformité
AEC-Q100 Grade 1 qualified per Infineon automotive-grade OptiMOS-7 family declaration. RoHS and REACH compliant per Infineon product page material-compliance section. Conflict-minerals compliant per Infineon supply-chain policy.
