IMZ120R080M1H - 1200V 80mOhm CoolSiC MOSFET | Infineon
Référence : IMZ120R080M1H ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $16.2 | $162,00 |
| 100 | $14.05 | $1 405,00 |
| 500 | $12.4 | $6 200,00 |
| 1 000 | $10.95 | $10 950,00 |
IMZ120R080M1H Présentation
Silicon Carbide MOSFETs are wide-bandgap power switches that exceed the voltage, frequency, and temperature limits of conventional silicon MOSFETs and IGBTs. In the broader taxonomy, SiC MOSFETs sit alongside GaN HEMTs in the wide-bandgap (WBG) semiconductor category, which itself falls under discrete power semiconductors. Compared with silicon IGBTs of the same voltage class, a 1200V SiC MOSFET delivers markedly lower switching loss, higher switching frequency capability, and no body-diode reverse-recovery tail, enabling smaller magnetics and higher power density.
Key features of the IMZ120R080M1H include a 1200V drain-to-source voltage rating, an RDS(on) of 80 mOhm at 25 degrees C, a benchmark gate threshold voltage of VGS(th) = 4.5V, and 0V turn-off gate drive that simplifies gate-driver design. The robust body diode supports hard commutation, and the trench structure provides a threshold-free on-state characteristic. This part is a CoolSiC 1200V SiC trench MOSFET in TO-247-4 packaging, leveraging a state-of-the-art silicon-carbide process to combine performance with long-term reliability.
Typical applications include industrial SMPS, solar inverters, EV charging infrastructure, UPS systems, and auxiliary power supplies for traction and industrial drives. The 1200V rating is well-matched to rectified 480VAC three-phase buses, while the fast switching enables higher converter power density.
When designing with this device, follow Infineon's recommendation to operate within 80% of maximum ratings for optimum lifetime. Gate-source voltage selection (positive and negative levels) significantly impacts long-term behavior; review the datasheet's gate-drive section carefully.
This page synthesizes distributor pricing, parametric context for the CoolSiC 1200V family, and design guidance not found in the manufacturer datasheet alone, helping engineers select and qualify a SiC switch for high-voltage designs.
Alternatives de remplacement direct pour IMZ120R080M1H — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IMZ120R080M1H (même facteur de forme et même empreinte) — différant par Manufacturer, Package, Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IMZ120R060M1H
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IMZ120R090M1H
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IMZ120R120M1H
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IMZC120R012M2H
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AIMZH120R080M1T
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
C3M0080120D
✅ Remplacement direct✓ En stock
$17.95 / unité
Voir la fiche technique →IMZ120R080M1H Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC 1200V SiC Trench MOSFET |
| Technology | Silicon Carbide (SiC) trench MOSFET |
| Drain-to-Source Voltage (VDS) | 1200 V |
| On-State Resistance RDS(on) | 80 mOhm at Tj = 25 C |
| Gate Threshold Voltage VGS(th) | 4.5 V (benchmark) |
| Turn-Off Gate Voltage | 0 V |
| Transistor Polarity | N-Channel |
| Style de montage | Through Hole |
| Boîtier | PG-TO247-4 |
| Robust Body Diode | Yes, supports hard commutation |
| Threshold-free On-state | Yes |
| Switching Losses | Very low (per datasheet) |
| Recommended Operating Margin | <= 80% of maximum ratings |
| RoHS | Compliant (per Mouser listing) |
Configuration des broches de IMZ120R080M1H
| Broche 1 | Gate — Gate drive input |
| Broche 2 | Drain — Drain (high-voltage, also connected to tab) |
| Broche 3 | Source — Power source return |
| Broche 4 | Kelvin Source — Kelvin source for gate-drive return, isolates power source from gate-loop inductance |
Zone de fonctionnement sûr
Applications typiques
IMZ120R080M1H convient pour 7 applications: Solar String Inverter, EV DC Fast Charger, Industrial SMPS and Welding, Uninterruptible Power Supply (UPS), Traction Auxiliary Power Supply, Photovoltaic Boost Converter, Server and Datacenter Power.
Solar String Inverter
The IMZ120R080M1H's 1200V rating and low switching loss suit it to DC-AC stages in residential and commercial solar string inverters operating from 600V to 1000V DC bus rails. The 80 mOhm RDS(on) balances conduction loss and switching loss at 20 kHz to 50 kHz PWM frequencies, while the robust body diode handles hard commutation during dead-time transitions. Compared with 1200V silicon IGBTs, this SiC trench part shrinks magnetics and improves CEC-weighted efficiency by 1 to 2 percentage points. Designers should implement +18V/-3V gate drive and verify dv/dt against the datasheet. Companion parts include gate drivers such as Infineon 1EDI20N12AF and current-sense ICs like the AMC1301.
Recommandé
EV DC Fast Charger
In 50 kW to 350 kW EV DC fast chargers, the IMZ120R080M1H serves the primary-side PFC and DC-DC bridge switching at high frequency, where its CoolSiC trench technology delivers 30 to 50% lower switching loss than equivalently-rated silicon IGBTs. The 1200V breakdown supports 800V EV battery architectures with comfortable margin. The 4-pin PG-TO247-4 package with Kelvin source enables clean gate drive at 100 kHz to 200 kHz, raising power density beyond what is achievable with TO-247-3 SiC parts. The benchmark VGS(th) = 4.5V and 0V turn-off simplify gate-driver selection. AEC-Q100 qualified CoolSiC variants (AIMZH120R080M1T) are recommended for automotive-grade production. Companion parts: TI UCC21750 gate driver, Infineon X3 digital PFC controller.
Recommandé
Industrial SMPS and Welding
Hard-switched industrial SMPS designs up to 10 kW benefit from the IMZ120R080M1H's 1200V rating on rectified 480V three-phase buses, and its low switching loss enables 100 kHz PWM for substantial magnetics shrinkage. Welding inverter front-ends with high di/dt and dv/dt demand the part's robust body diode for hard commutation and the benchmark VGS(th) = 4.5V for predictable turn-on across temperature. The PG-TO247-4 mechanical form provides reliable through-hole mounting in industrial environments. Operating margin should stay within 80% of maximum ratings per Infineon's reliability note. Companion parts: Infineon EiceCool gate drivers, TDK VTM transformers.
Recommandé
Uninterruptible Power Supply (UPS)
Online UPS systems in the 5 kW to 50 kW range use the IMZ120R080M1H in the inverter and PFC stages where efficiency directly translates to lower cooling cost and longer battery runtime. The CoolSiC trench MOSFET's zero reverse-recovery tail eliminates dead-time losses that plague IGBT-based UPS designs, raising light-load efficiency by 1 to 2 points. The 80 mOhm RDS(on) supports continuous conduction at the part's thermal limit with adequate heatsinking, and the 0V turn-off capability simplifies the gate-drive supply. PG-TO247-4 with Kelvin source keeps gate-loop inductance low for stable high-frequency switching. Companion parts: TI TMS320F28x DSP controller, Infineon EicePFC controller.
Recommandé
Traction Auxiliary Power Supply
Rail and industrial traction auxiliary converters - powering fans, lighting, and control electronics from 600V to 1000V DC bus - use the IMZ120R080M1H in compact, high-frequency isolated DC-DC stages. The 1200V SiC trench technology replaces 1200V IGBTs at 2x to 3x the switching frequency, halving transformer size. The robust body diode tolerates the hard commutation seen during bus transients and short-circuit events. PG-TO247-4 provides the mechanical robustness required for traction environments. For traction-qualified designs, the automotive AIMZH120R080M1T variant is recommended. Companion parts: planar transformers, Infineon EiceSwitch controllers.
Recommandé
Photovoltaic Boost Converter
In photovoltaic boost stages stepping 600V to 1000V DC link voltages, the IMZ120R080M1H enables high-frequency operation that shrinks the boost inductor and improves transient response to changing solar irradiance. The CoolSiC trench part's 80 mOhm RDS(on) and 1200V rating are well-matched to 1500V DC system architectures now common in utility-scale solar. Its low switching loss improves CEC and EU efficiency ratings by measurable amounts. The PG-TO247-4 footprint with Kelvin source minimizes gate-loop inductance for stable operation at 100 kHz+. Companion parts: TI UCC28C42 PWM controller, Wolfspeed gate-driver boards for evaluation.
Recommandé
Server and Datacenter Power
Three-phase PFC and high-voltage bus converters in 3 kW to 30 kW server and datacenter power shelves can use the IMZ120R080M1H for its high switching frequency and efficiency. At 100 kHz to 200 kHz, the CoolSiC trench MOSFET shrinks magnetics enough to fit power-dense 1U and 2U shelves. Its 80 mOhm RDS(on) balances conduction loss at full power while the 1200V rating covers 480VAC rectified inputs comfortably. The PG-TO247-4 package with Kelvin source enables clean gate drive - critical at high dv/dt - and the benchmark VGS(th) ensures predictable turn-on across the operating temperature range. Companion parts: TI UCC28180 PFC controller, planar magnetics.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IMZ120R080M1H — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IMZ120R060M1H | IMZ120R090M1H | IMZ120R120M1H | IMZC120R012M2H | C3M0080120D |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Wolfspeed |
| Package | PG-TO247-4 | PG-TO247-4 - same | PG-TO247-4 - same | PG-TO247-4 - same | PG-TO247-4-17 - same family | TO-247-3 - 3-pin variant |
| Drain-to-Source Voltage | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| RDS(on) at Tj=25C | 80 mOhm | 60 mOhm | 90 mOhm | 120 mOhm | 12 mOhm (M2 die) | 80 mOhm |
| Technology | CoolSiC 1200V SiC Trench (M1) | CoolSiC 1200V SiC Trench (M1) | CoolSiC 1200V SiC Trench (M1) | CoolSiC 1200V SiC Trench (M1) | CoolSiC 1200V SiC Trench (M2) | Wolfspeed Gen 3 SiC |
| Gate Threshold VGS(th) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 2.5 V to 3.5 V typical |
| 0V Turn-off Capable | Yes | Yes | Yes | Yes | Yes | Yes (with -4V recommended) |
| Automotive Qualified | No (industrial) | No | No | No | No | No |
| Body Diode Robustness | Hard-commutation rated | Hard-commutation rated | Hard-commutation rated | Hard-commutation rated | Hard-commutation rated | Hard-commutation rated |
| Typical Unit Price (qty 1) | $18.50 | Higher (~22 USD) | Lower (~16 USD) | Lower (~10 USD) | Much higher (~80 USD) | Similar (~22 USD) |
Principaux différenciateurs
- Mid-range RDS(on) within the CoolSiC 1200V family (vs IMZ120R060M1H)
- Pin-compatible 80 mOhm drop-in for IMZ120R090M1H designs (vs IMZ120R090M1H)
- M1 trench die with proven reliability (vs IMZC120R012M2H (M2 die))
- Industrial CoolSiC technology at competitive pricing (vs C3M0080120D (Wolfspeed))
- Benchmark VGS(th) = 4.5V with 0V turn-off (vs C3M0080120D (Wolfspeed))
Notes de conception
Keep the gate-drive return path (Kelvin source pin 4) physically separate from the power-source return (pin 3) trace. Tie pin 4 directly to the gate-driver output ground rather than the power-source PCB trace; this reduces gate-loop inductance by 5 nH to 10 nH and prevents gate-oscillation at 100 kHz+ switching. The 4-pin PG-TO247-4 package exists specifically for this reason - use it as designed.
Estimated: at 50 kHz, 600V bus, and 15A continuous drain current, total power dissipation is roughly 25 W (conduction: I^2 x R x D = ~14W; switching: ~11W). The PG-TO247-4 has typical theta_JC of 0.45 C/W, so junction temperature rises ~11 C above case. Add a heatsink sized to keep Tj below 150 C under worst-case ambient. Per Infineon reliability guidance, stay within 80% of maximum ratings for optimum lifetime.
Do not operate continuously at the absolute maximum VDS of 1200V; the recommended DC bus ceiling is 1000V with transient margin to 1200V. Use Infineon-recommended +18V turn-on and -3V turn-off gate voltages - lower positive drive increases RDS(on) and conduction loss, while insufficient negative drive risks parasitic turn-on. Verify gate-drive voltages with an oscilloscope at startup.
Minimize the high-di/dt power-loop area between the DC-link capacitor, the MOSFET drain-source, and the return capacitor. Use a low-inductance bus-bar or wide copper pours on top and bottom layers with multiple vias. The TO-247-4 drain tab is also a heatsink mounting surface - apply thermal compound and use an insulating washer if the case is electrically live.
The fast edges of SiC MOSFETs (50 V/ns to 100 V/ns) generate significant common-mode EMI. Install a CM choke on the DC bus, use a gate-driver with adjustable dv/dt, and consider a small RC snubber (10 ohm + 1 nF) across the device to slow edges if EMI compliance fails. The PG-TO247-4 Kelvin-source pin is essential for clean switching at high dv/dt.
Informations de conformité
RoHS compliant per Mouser product listing. Industrial grade, not AEC-Q100 qualified - choose AIMZH120R080M1T for automotive. Halogen-free and conflict-minerals status not stated in the verified web data.
