K4F6E3S4HM-THCL02V - 16Gb LPDDR4 SDRAM FBGA-200 | Samsung
Référence : K4F6E3S4HM-THCL02V ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $40.97 | $40,97 |
| 10 | $38.5 | $385,00 |
| 100 | $35.2 | $3 520,00 |
| 500 | $32 | $16 000,00 |
| 1 000 | $28.5 | $28 500,00 |
K4F6E3S4HM-THCL02V Présentation
An LPDDR4 (Low-Power Double Data Rate 4) SDRAM is a JEDEC-defined volatile memory standard optimized for mobile and embedded applications where bandwidth density and energy per bit matter. LPDDR4 SDRAM sits inside the broader taxonomy of DRAM -> volatile memory -> memory IC -> semiconductor. Compared to LPDDR3, it doubles peak data rates, halves the I/O voltage (1.1V VDDQ), and introduces a 16n-prefetch architecture. LPDDR4X (the closest variant in this family) further lowers I/O voltage to 0.6V for additional power savings.
Key features of the K4F6E3S4HM-THCL02V include 4266 Mbps per-pin data rate, x32 organization (16Gb density), industrial-grade -40C to +105C operating temperature, and an ultra-thin FBGA-200 footprint tuned for sub-1.0mm stacked-package-on-package (PoP) and discrete mobile mainboard routing. The device supports both single-channel and dual-channel SoC interfaces, command-based training via MR (mode register) writes, and per-byte write leveling.
Technically, this LPDDR4 uses a 16n prefetch architecture with eight internal banks per channel, programmable CAS latency, and on-die temperature sensing. The 4266 Mbps speed grade corresponds to a clock rate of 2133 MHz DDR. The wide operating range makes it suitable for automotive infotainment and industrial HMI where thermal margins exceed commercial-grade DRAM envelopes.
Typical applications include flagship Android smartphones, AR/VR headsets, AI edge inference modules, automotive infotainment, and ultra-thin notebooks. Its 4266 Mbps bandwidth supports multi-camera ISP pipelines and on-device neural network inference with low DRAM power.
Design tip: route the LPDDR4 channel as a 100-ohm differential matched-length group, place the device within 3 mm of the SoC to control fly-by impedance, and add a 100 nF + 1 uF decoupling set near each VDD1/VDD2/VDDQ ball. Ensure the SoC supports the JEDEC JESD209-4 LPDDR4 base specification for full timing compliance.
This page synthesizes distributor pricing, drop-in alternatives, and practical layout guidance not found in the manufacturer datasheet.
Alternatives de remplacement direct pour K4F6E3S4HM-THCL02V — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4F6E3S4HM-THCL
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4F6E3S4HM-TFCL
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4F6E3S4HM-MGCL
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
HGD4F16S37H
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4F6E304HM-MHCL
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4F6E3S4HM-THCL02V Valeurs maximales et caractéristiques électriques
| Type de mémoire | LPDDR4 SDRAM (mobile) |
| Density | 16 Gbit (16 Gb) |
| Organisation de la mémoire | 512M x 32 |
| Maximum Data Rate | 4266 Mbps per pin |
| Clock Rate | 2133 MHz DDR |
| Supply Voltage VDD1 | 1.1 V |
| Supply Voltage VDD2 | 1.1 V |
| Supply Voltage VDDQ | 1.8 V |
| Température de fonctionnement | -40C to +105C |
| Boîtier | FBGA-200 |
| Type de montage | Surface Mount (BGA) |
| Prefetch | 16n |
| Internal Banks | 8 banks per channel |
| Interface Width | x32 (per channel) |
| Statut RoHS | Compliant |
| JEDEC Standard | JESD209-4 (LPDDR4) |
Guide de configuration des broches du K4F6E3S4HM-THCL02V fbga-200
Configuration des broches du K4F6E3S4HM-THCL02V (boîtier fbga-200). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4F6E3S4HM-THCL02V.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4F6E3S4HM-THCL02V convient pour 6 applications: Flagship Smartphone Main Memory, AR/VR Headset Memory Subsystem, Edge AI Inference Module, Automotive Infotainment Platform, Ultra-Thin Notebook Memory, IoT Edge Gateway with On-Device AI.
Flagship Smartphone Main Memory
The K4F6E3S4HM-THCL02V's 16Gb density and 4266 Mbps per-pin data rate provide enough bandwidth for flagship Android smartphones running multi-camera ISP, 4K HDR capture, and on-device AI workloads. Its 1.1V VDD1/VDD2 and 1.8V VDDQ supplies cut DRAM subsystem power by ~40% versus LPDDR4X peers when measured at the system SoC. Designers should route the channel within 3 mm of the SoC to control fly-by impedance and place 100nF + 1uF decoupling near each VDD ball for stable power delivery during burst refresh.
Recommandé
AR/VR Headset Memory Subsystem
AR/VR headsets require high bandwidth for stereoscopic display rendering, SLAM, and eye-tracking pipelines. The K4F6E3S4HM-THCL02V's 4266 Mbps data rate supplies enough throughput for dual-eye 4K display buffers at 90Hz refresh while staying inside the thermal envelope of a head-mounted device. The -40C to +105C industrial temperature grade handles the elevated temperatures inside a sealed headset when SoCs are under sustained inference load. Its FBGA-200 footprint supports sub-1.0mm stacked PoP designs.
Recommandé
Edge AI Inference Module
Edge AI accelerator cards for industrial machine vision need compact, low-power, high-bandwidth DRAM to hold model weights and activations. The K4F6E3S4HM-THCL02V delivers 17 GB/s peak bandwidth per channel (4266 Mbps x 32 / 8), which is enough for medium-sized CNN inference at 30 FPS. The 1.1V core supply minimizes power per gigabyte transferred, a key metric for fanless edge devices. Designers should route address/command as a 50-ohm single-ended group and DQ as a 100-ohm differential matched-length group.
Recommandé
Automotive Infotainment Platform
Automotive infotainment head units run Android Automotive OS with multi-display rendering, rear-seat entertainment, and ADAS visualization. The K4F6E3S4HM-THCL02V's -40C to +105C industrial temperature grade covers automotive cabin thermal cycles, and its 4266 Mbps data rate supports dual 1080p display buffers plus surround-view camera stitching. The FBGA-200 footprint enables compact PCB layouts that fit behind the dashboard display. AEC-Q100 qualification is at the SoC level; this DRAM follows JEDEC JESD209-4 reliability.
Recommandé
Ultra-Thin Notebook Memory
Ultra-thin notebooks require dense, low-power DRAM in compact form factors. The K4F6E3S4HM-THCL02V's 16Gb density in FBGA-200 enables 8GB or 16GB LPDDR4 configurations with minimal PCB area, ideal for sub-15mm-thick laptops. Its 1.1V/1.1V supply set extends battery life versus DDR4 SODIMM modules. The device can be stacked via Package-on-Package (PoP) directly atop the SoC to minimize board area. Designers should verify SoC support for LPDDR4 (not LPDDR4X) before integration.
Recommandé
IoT Edge Gateway with On-Device AI
Industrial IoT gateways increasingly run on-device anomaly detection and predictive maintenance models. The K4F6E3S4HM-THCL02V supplies enough bandwidth to run small transformer models in parallel with rule-based control loops. Its 1.1V supply keeps gateway power budgets under 10W while providing 17 GB/s per-channel throughput. The -40C to +105C range covers outdoor enclosure temperatures at solar-powered sites. Stack on PoP atop the SoC for compact DIN-rail mountable designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4F6E3S4HM-THCL02V — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4F6E3S4HM-THCL | K4F6E3S4HM-TFCL | K4F6E3S4HM-MGCL | HGD4F16S37H | K4F6E304HM-MHCL |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | HGCHIPS | Samsung Electronics |
| Package | FBGA-200 | FBGA-200 | FBGA-200 | FBGA-200 | FBGA-200 | FBGA-200 |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 512M x 32 | 512M x 32 | 512M x 32 | 512M x 32 | 512M x 32 | 512M x 32 |
| VDDQ Voltage | 1.8 V (LPDDR4) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- 4266 Mbps speed bin at 16Gb density in industrial temp grade (vs K4F6E3S4HM-TFCL)
- Samsung factory-qualified ordering code for OEM channels (vs HGD4F16S37H)
- Industrial -40C to +105C temperature grade for non-consumer applications (vs K4F6E304HM-MHCL)
Notes de conception
Route the LPDDR4 channel as a 100-ohm differential matched-length group with skew under 5 ps between DQ bytes. Place the K4F6E3S4HM-THCL02V within 3 mm of the host SoC to control fly-by impedance on the address/command bus. Use a 4-layer PCB minimum with continuous ground plane under the BGA escape region. Series-staggered vias for break-out reduce stub length and impedance discontinuities.
Provide separate decoupling for each voltage rail: 100 nF + 1 uF ceramic caps within 1 mm of each VDD1, VDD2, and VDDQ ball. Add a 10 uF bulk capacitor near the package. The 1.1V core rails (VDD1/VDD2) should have ferrite-bead isolation from the SoC's internal logic supply to avoid LPDDR4 burst-refresh noise coupling back to the SoC. VDDQ at 1.8V is the I/O supply and is more tolerant of switching noise.
Do not confuse LPDDR4 (1.8V VDDQ) with LPDDR4X (0.6V VDDQ). The K4F6E3S4HM-THCL02V is LPDDR4 with 1.8V VDDQ, not LPDDR4X. Connecting LPDDR4X signal levels to this part will damage it. Verify the host SoC supports JEDEC JESD209-4 LPDDR4 base specification, including MR initialization sequence, write leveling, and gate training, before integration.
The FBGA-200 package's bottom thermal pad is the primary heat dissipation path. Apply thermal vias in the PCB land pattern directly under the BGA, connecting to inner ground planes. At maximum sustained bandwidth (4266 Mbps read/write), DRAM self-heating is non-trivial; in sealed enclosures (AR/VR, edge gateways) verify junction-to-ambient at the SoC stack level. The -40C to +105C operating range refers to ambient; junction may run 10-15C higher under sustained load.
Informations de conformité
RoHS compliant per JLCPCB listing. Not AEC-Q100 qualified at the DRAM level (AEC-Q100 applies to the host SoC in automotive designs). Lead-free and halogen-free per Samsung LPDDR4 family compliance. JEDEC JESD209-4 base standard compliance.
