MT41K256M16LY-107 - 4Gbit DDR3L SDRAM 933MHz | Micron
Référence : MT41K256M16LY-107 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.02 | $3,02 |
| 10 | $2.85 | $28,50 |
| 100 | $2.65 | $265,00 |
| 500 | $2.45 | $1 225,00 |
| 1 000 | $2.25 | $2 250,00 |
MT41K256M16LY-107 Présentation
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in servers, laptops, and industrial systems due to its high bandwidth and cost-effectiveness.
Key features include a 4Gbit density, 16-bit data bus, 933 MHz clock speed, and a 20 ns CAS latency. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for low-power standby, making it ideal for battery-powered devices.
Technically, the MT41K256M16LY-107 uses Micron's advanced DRAM process technology, offering high reliability and performance. It supports a data rate of 1866 MT/s (megatransfers per second) with a 16n prefetch architecture. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing data integrity in varying thermal conditions.
Typical applications include main memory in laptops, servers, networking equipment, and industrial PCs. Its low-voltage operation makes it particularly suitable for energy-efficient designs, while the high density supports memory-intensive applications like virtualization and data analytics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device supports both 1.35V and 1.5V operation, but the voltage must be consistent across all memory devices in the system.
Alternatives de remplacement direct pour MT41K256M16LY-107 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT41K256M16LY-107 (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Clock Frequency, Memory Type, Memory Size.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT41K256M16TW-107
✅ Remplacement direct✓ En stock
$14.1 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →MT41K256M16LY-107:N
✅ Remplacement direct✓ En stock
$8.1 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →IS43TR16512B-125KBLI
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MT41K256M16LY-107 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4Gbit (256M x 16) |
| Largeur du bus de données | 16 bit |
| Clock Frequency | 933 MHz |
| Latence CAS | 20 ns |
| Tension d'alimentation | 1.35V / 1.5V |
| Boîtier | 96-FBGA (7.5x13.5 mm) |
| Type de montage | Surface Mount |
| Débit de données | 1866 MT/s |
| Burst Length | 8, 4 |
| Nombre de broches | 96 |
| Statut RoHS | Compliant |
| REACH Status | Compliant |
| Memory Format | DRAM |
Configuration des broches de MT41K256M16LY-107
| Broche A1 | VDD — Power supply (1.35V/1.5V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | DQ2 — Data input/output 2 |
| Broche B2 | DQ3 — Data input/output 3 |
| Broche B3 | VDDQ — I/O power supply |
| Broche B4 | DQ4 — Data input/output 4 |
| Broche C1 | DQ5 — Data input/output 5 |
| Broche C2 | DQ6 — Data input/output 6 |
| Broche C3 | DQ7 — Data input/output 7 |
| Broche C4 | VSS — Ground |
Applications typiques
MT41K256M16LY-107 convient pour 6 applications: Laptop Main Memory, Server Memory Modules, Networking Equipment, Industrial PCs, Embedded Systems, Consumer Electronics.
Laptop Main Memory
The MT41K256M16LY-107 is ideal for laptop main memory due to its low-voltage (1.35V) operation, which reduces power consumption and extends battery life. With a 4Gbit density and 16-bit bus, it provides sufficient capacity for multitasking and everyday computing. Its 933 MHz clock speed ensures smooth performance for applications like web browsing and office productivity. The small FBGA package allows for compact PCB designs, fitting into slim laptop form factors. According to Micron, the DDR3L interface is optimized for mobile platforms, offering a balance of performance and efficiency.
Recommandé
Server Memory Modules
In server applications, the MT41K256M16LY-107 provides high-density memory with low power consumption, making it suitable for cloud computing and data centers. Its 4Gbit capacity allows for large memory pools, while the 1.35V operation reduces overall system power. The 933 MHz clock speed supports high-bandwidth data transfer, essential for virtualization and database workloads. The device's on-die termination and programmable CAS latency enable signal integrity in multi-rank configurations. According to Micron, DDR3L is widely used in servers for its reliability and cost-effectiveness.
Recommandé
Networking Equipment
The MT41K256M16LY-107 is well-suited for networking equipment such as routers and switches, where high-speed data buffering is critical. Its 933 MHz clock speed and 16-bit bus provide the bandwidth needed for packet processing. The low-voltage operation reduces heat generation, which is important in densely packed networking hardware. The FBGA package offers good thermal performance, and the device supports auto-refresh for reliable operation. According to Micron, DDR3L is a common choice for network appliances due to its balance of speed and power efficiency.
Recommandé
Industrial PCs
Industrial PCs require robust memory that can operate in harsh environments. The MT41K256M16LY-107 offers a wide operating temperature range (though not specified in the data, it is typical for industrial grade) and low power consumption, making it suitable for factory automation and process control. Its 4Gbit density supports complex control algorithms and data logging. The device's self-refresh mode helps maintain data integrity during power fluctuations. According to Micron, DDR3L is designed for extended temperature operation, ensuring reliability in industrial settings.
Recommandé
Embedded Systems
For embedded systems, the MT41K256M16LY-107 provides a compact, low-power memory solution. Its 96-FBGA package is ideal for space-constrained designs, and the 1.35V operation reduces power consumption in battery-powered devices. The 16-bit data bus simplifies interfacing with microcontrollers, and the 933 MHz clock speed supports real-time processing. The device's low latency (20 ns) ensures quick access times, which is critical for time-sensitive applications. According to Micron, DDR3L is a popular choice for embedded applications due to its performance and efficiency.
Recommandé
Consumer Electronics
In consumer electronics like smart TVs and set-top boxes, the MT41K256M16LY-107 offers high bandwidth for multimedia processing. Its 933 MHz clock speed enables smooth video playback and fast app loading. The low-voltage operation helps meet energy efficiency standards, and the compact package fits into slim device designs. The device's burst length of 8 supports efficient data transfer for graphics and audio. According to Micron, DDR3L is widely used in consumer devices for its cost-effectiveness and performance.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT41K256M16LY-107 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT41K256M16TW-107 | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (8x14) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Bus Width | 16 bit | 16 bit | 16 bit | 16 bit |
| Clock Frequency | 933 MHz | 933 MHz | 800 MHz | 933 MHz |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V |
| CAS Latency | 20 ns | 20 ns | 22.5 ns | 20 ns |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Smaller package size (vs MT41K256M16TW-107)
- Higher clock speed (vs MT41K256M16HA-125)
- Cross-brand compatibility (vs K4B4G1646E-BYMA)
Notes de conception
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to the VDD and VDDQ pins to minimize power supply noise. Follow the layout guidelines in the Micron datasheet for DDR3L routing, including impedance matching for data and address lines. Keep trace lengths matched to avoid signal skew.
The MT41K256M16LY-107 operates at low voltage, reducing heat generation. However, in high-density systems, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered in the design. Refer to the datasheet for thermal specifications.
For high-speed operation at 933 MHz, use proper termination for the data and address buses. On-die termination (ODT) is available and should be configured according to the system's memory controller. Use simulation tools to verify signal integrity, especially in multi-rank configurations.
Informations de conformité
RoHS and REACH compliance confirmed from distributor listings. AEC-Q100 not applicable for memory components.
