K4M56163PG-BG75 - 128Mb Mobile SDRAM, 16Mx16, 54-FBGA | Samsung
Référence : K4M56163PG-BG75 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.85 | $3,85 |
| 10 | $3.42 | $34,20 |
| 100 | $2.95 | $295,00 |
| 500 | $2.55 | $1 275,00 |
| 1 000 | $2.18 | $2 180,00 |
K4M56163PG-BG75 Présentation
Mobile SDRAM is a category of synchronous DRAM that was optimized for portable, battery-powered applications in the early 2000s. Operating from a single 1.8 V rail (significantly lower than the 3.3 V required by earlier SDRAM generations), Mobile SDRAM sits in the broader taxonomy of dynamic random-access memory (DRAM) -> volatile memory -> semiconductor memory -> integrated circuit. Its four-bank internal structure allows concurrent activation of one row per bank, which hides precharge latency and improves sustained throughput versus single-bank PSRAM or SRAM alternatives in streaming workloads.
Key features of the K4M56163PG-BG75 include 4M x 16bit x 4 Banks density, 1.8 V VDD/VDDQ supply, LVCMOS-compatible inputs with multiplexed address bus, programmable CAS latency (1, 2, or 3 clocks at 133 MHz), programmable burst length (1, 2, 4, 8, or Full Page), and programmable burst type (Sequential or Interleave). Auto-refresh and self-refresh modes are supported for power-conservation duty cycles, and the device is designed for low standby current, which is essential in handheld applications. The 54-FBGA package is approximately 8 mm x 8 mm with 0.8 mm pitch, suiting compact PCB layouts in mobile devices.
In terms of architecture, the K4M56163PG-BG75 uses a four-bank SDRAM core with a 16-bit data bus, dual-bank interleaving for precharge parallelism, and a single data strobe (DQS) for source-synchronous read/write alignment. The interface follows JEDEC-compliant Mobile SDRAM signaling at 1.8 V. Compared with SRAM of identical capacity, the K4M56163PG-BG75 trades off random-access symmetry and deterministic latency for higher density per mm² and lower quiescent current in self-refresh, while still offering SDR-grade bandwidth for buffered video and frame-buffer roles.
Typical applications include mobile phone baseband working memory, PDA operating-system memory, portable media player frame buffer, handheld GPS navigation RAM, early smartphone application-processor external SDRAM, and digital camera image-processing buffers. The 54-FBGA footprint was widely adopted in mobile handsets of its era, and the 1.8 V supply simplifies PMIC integration.
When laying out a PCB for the K4M56163PG-BG75, route the 16-bit DQ group with matched trace lengths, keep the DQS strobe length-matched to within the data group, and place decoupling capacitors as close as possible to the VDD and VDDQ balls. The 0.8 mm-pitch FBGA requires via-in-pad or microvia fabrication, and an impedance-controlled layer stack is mandatory for stable read/write at 133 MHz.
This page synthesizes distributor pricing from nine sources, four-bank SDRAM drop-in alternatives, and practical layout guidance not found in the original Samsung datasheet.
Alternatives de remplacement direct pour K4M56163PG-BG75 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4M56163PG-BG75T00
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4M56163PG-BG1H
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4M56163PG-BL75
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W9816G6JH-75
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IS61WV12816EDBL-10BLI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AS6C8016-55BIN
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4M56163PG-BG75 Valeurs maximales et caractéristiques électriques
| Type de mémoire | Mobile SDRAM (Synchronous DRAM), volatile |
| Memory Density | 128 Mbit (4M x 16 Bit x 4 Banks) |
| Organisation de la mémoire | 16M words x 16 bits |
| Number of Banks | 4 internal banks |
| Operating Voltage (VDD/VDDQ) | 1.8 V |
| Interface Logic Level | LVCMOS-compatible |
| Address Bus | Multiplexed address |
| Clock Frequency (max, -BG75) | 133 MHz (tCK = 7.5 ns) |
| Latence CAS | Programmable (1 / 2 / 3 clocks via MRS) |
| Burst Length | 1, 2, 4, 8, or Full Page (programmable via MRS) |
| Burst Type | Sequential or Interleave (programmable) |
| Refresh | Auto-Refresh and Self-Refresh supported |
| Boîtier | 54-ball FBGA (Fine-pitch BGA) |
| Package Pitch | 0.8 mm ball pitch |
| Type de montage | Surface Mount (SMT) |
| Process Technology | CMOS |
| Operating Temperature (commercial) | 0C to +70C (per datasheet family) |
| Compliance | JEDEC Mobile SDRAM signaling (per datasheet family) |
| Statut RoHS | Compliant |
Guide de configuration des broches du K4M56163PG-BG75 0.8 mm ball pitch
Configuration des broches du K4M56163PG-BG75 (boîtier 0.8 mm ball pitch). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4M56163PG-BG75.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4M56163PG-BG75 convient pour 6 applications: Mobile Phone Baseband Working Memory, PDA / Handheld OS Working Memory, Portable Media Player Frame Buffer, Handheld GPS Navigation RAM, Digital Camera Image-Processing Buffer, Industrial Handheld Terminal Memory.
Mobile Phone Baseband Working Memory
The K4M56163PG-BG75's 128 Mbit density at 1.8 V was a standard working-memory building block for late-2000s 2G/3G feature-phone and early-smartphone baseband ASICs. Four-bank SDRAM allows row precharge overlap across RF DSP and protocol-stack buffers, hiding precharge latency behind active-bank service; this is exactly the access pattern that baseband subsystems produce. The 133 MHz / 16-bit interface delivers approximately 266 MB/s of burst bandwidth, sufficient for codec buffering, vocoder working sets, and small TCP windows. Self-refresh mode is critical here because the handset spends most of its life in idle, and the K4M56163PG-BG75's self-refresh current fits within the radio-off duty budget. Matched DQ and DQS trace-length pairs remain mandatory to maintain read-capture margin at 133 MHz.
Recommandé
PDA / Handheld OS Working Memory
Pre-iPhone-era PDAs and handhelds running embedded Linux, Windows CE, or Palm OS used Mobile SDRAM as main system memory because 1.8 V operation matched the era's PMIC rails. The K4M56163PG-BG75 supplies 32 MB usable to a 32-bit application processor via a 16-bit data bus, with the upper 16 bits provided by a second K4M56163PG-BG75 stacked on chip-enable 1. Auto-refresh is scheduled by the OS memory controller during idle loops, and the four-bank architecture supports concurrent activation of code, stack, and frame-buffer rows. The 54-FBGA 0.8 mm-pitch footprint fits comfortably above the BGA processor, allowing short stubs that preserve signal integrity at 133 MHz on a 4-layer FR-4 stack.
Recommandé
Portable Media Player Frame Buffer
Portable MP4 media players of the late 2000s used a 1.8 V Mobile SDRAM like the K4M56163PG-BG75 as the frame buffer for their video decoder ASIC. With a 133 MHz / 16-bit interface, the part sustains 266 MB/s of read bandwidth - enough to feed QVGA (320x240) H.264 decode at 30 fps with headroom for audio jitter buffers. Four-bank operation enables simultaneous video-frame read, audio ring-buffer service, and UI rasterization in independent banks, preventing precharge stalls. Self-refresh during pause/play mode drops standby current to microamp levels, extending playback time on a single charge. Layout must keep the DQ group within 50 mil of the DQS trace length to preserve read-capture timing at full clock.
Recommandé
Handheld GPS Navigation RAM
Handheld GPS navigators required non-volatile storage for maps plus working RAM for live route calculation, and the K4M56163PG-BG75 filled that working-memory role. The 16-bit data bus pairs efficiently with the GPS baseband's internal DMA engine, and the four-bank SDRAM architecture supports the bursty read pattern of map tile streaming with low precharge penalty. 1.8 V operation is essential for automotive 12 V-to-USB-charge environments where the PMIC already downshifts to 1.8 V for core logic. The -BG75 speed grade's 7.5 ns tCK comfortably drives map-render cycles for QVGA panels at 30 fps refresh. Designers must sequence VDD before VDDQ during power-up to avoid latch-up.
Recommandé
Digital Camera Image-Processing Buffer
Compact digital cameras of the late 2000s used Mobile SDRAM as a JPEG-compression and preview-frame buffer between the image sensor and the image-signal processor (ISP). The K4M56163PG-BG75's 128 Mbit capacity holds approximately 10 JPEG frames at 8 MP or one full-resolution burst buffer, while the 16-bit / 133 MHz interface keeps up with sensor line rates at 10 fps. Four-bank interleaving enables simultaneous preview capture, JPEG compression, and SD-card write without precharge contention. Self-refresh during idle lowers standby current between shots - critical for AA-powered cameras. Place decoupling within 2 mm of every VDD/VDDQ ball pair to control switching noise during burst writes.
Recommandé
Industrial Handheld Terminal Memory
Industrial barcode-scanner handhelds, point-of-sale terminals, and field-service PDAs of their era adopted the K4M56163PG-BG75 for ruggedized 1.8 V working memory. The 54-FBGA package with underfill improves board-level reliability against vibration and thermal cycling, while four-bank SDRAM allows multitasking between barcode-decode, inventory lookup, and wireless-sync operations. The 133 MHz interface sustains multi-protocol industrial-bus throughput, and self-refresh supports sleep modes that extend shift-life battery endurance. RoHS-compliant construction matches industrial environmental directives. Designers should add a 0.1 uF decoupling cap per VDD/VDDQ ball pair and follow the JEDEC Mobile SDRAM PCB layout guidelines.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4M56163PG-BG75 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4M56163PG-BG75T00 | K4M56163PG-BG1H | K4M56163PG-BL75 | W9816G6JH-75 | IS61WV12816EDBL-10BLI | AS6C8016-55BIN |
|---|---|---|---|---|---|---|---|
| Brand | Samsung | Samsung | Samsung | Samsung | Winbond | ISSI | Alliance Memory |
| Package | 54-FBGA (0.8 mm pitch) | 54-FBGA - same | 54-FBGA - same | 54-FBGA - same | 54-FBGA - same | 54-BGA - same family | 54-BGA - same family |
| Memory Density | 128 Mbit (4M x 16 x 4 banks) | 128 Mbit - same | 128 Mbit - same | 128 Mbit - same | 128 Mbit - same | 2Mb / 4Mb SRAM - different class | 8Mb SRAM - lower density |
| Memory Type | Mobile SDRAM | Mobile SDRAM - same | Mobile SDRAM - same | Mobile SDRAM - same | Mobile SDRAM - same | Async SRAM - different class | Async SRAM - different class |
| Operating Voltage | 1.8 V | 1.8 V - same | 1.8 V - same | 1.8 V - same | 1.8 V - same | 2.2-3.6 V | 2.7-5.5 V |
| Max Clock / Access Time | 133 MHz / 7.5 ns | 133 MHz / 7.5 ns - same | 143 MHz / 7.0 ns (faster) | 133 MHz / 7.5 ns - same | 133 MHz / 7.5 ns - same | 10 ns async | 55 ns async |
| Refresh Mode | Auto-Refresh + Self-Refresh | Auto + Self - same | Auto + Self - same | Auto + Self - same | Auto + Self - same | N/A (SRAM, no refresh) | N/A (SRAM, no refresh) |
| Lifecycle Status | Obsolete (Samsung EOL) | Obsolete | Obsolete | Obsolete | Active (second-source) | Active (SRAM) | Active (SRAM) |
Principaux différenciateurs
- Samsung JEDEC-compliant Mobile SDRAM in 54-FBGA at 1.8 V (vs W9816G6JH-75)
- Synchronous SDRAM with 4-bank architecture vs asynchronous SRAM cross (vs IS61WV12816EDBL-10BLI)
- Tape-and-reel ordering variant available for SMT (vs K4M56163PG-BG75T00)
Notes de conception
The 54-FBGA package at 0.8 mm ball pitch requires microvia or via-in-pad PCB fabrication to escape the inner-row balls. Use 4-layer FR-4 minimum with a continuous ground plane on layer 2 to control the 133 MHz return-current path. Match the DQ0-DQ15 traces within +/- 50 mil and the DQS strobe trace within +/- 25 mil of the data group mean to preserve read-capture margin. Place one 0.1 uF X7R decoupling capacitor within 2 mm of every VDD/VDDQ ball pair and add a single 1 uF bulk capacitor near the device center.
Apply VDD before VDDQ during power-up to avoid latch-up, and ramp both rails monotonically within the JEDEC Mobile SDRAM tVDD specification. VDD and VDDQ must share the same DC voltage (1.8 V +/- 0.15 V) but their decoupling networks should remain separate. For systems that gate VDDQ independently for power saving, observe a minimum 100 us delay before issuing the first SDRAM command after VDDQ returns. Use a PMIC with 1.8 V LDO rather than a switching regulator to avoid injecting switching noise into the SDRAM clock.
The Samsung datasheet requires CAS latency, burst length, and burst type to be programmed via the MRS command before any read/write transaction, and the EMRS command must be issued for I/O configuration. Do not assume default register values match your memory controller - always run an SDRAM initialization routine at boot. Self-refresh current rises with temperature; consult the datasheet IBIS or SPICE model if your design operates above commercial 0C-70C. When migrating from K4M56163PG-BG75 to the W9816G6JH-75 second source, validate the /DQM timing against your controller because some platforms drive /DQM 1 cycle early.
Informations de conformité
RoHS compliance per Samsung product page and distributor listings. AEC-Q100 is not applicable - this is a consumer-mobile DRAM, not an automotive-qualified part. Halogen-free status not explicitly stated in the verified data.
