K4S161622H-TC60 - 16Mb SDRAM 1Mx16 LVTTL TSOP2-50 | Samsung
Référence : K4S161622H-TC60 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.5 | $6,50 |
| 10 | $5.85 | $58,50 |
| 100 | $5.2 | $520,00 |
| 500 | $4.65 | $2 325,00 |
| 1 000 | $4.1 | $4 100,00 |
K4S161622H-TC60 Présentation
A Synchronous DRAM is a dynamic random-access memory whose read, write, and refresh operations are synchronized to a system clock, allowing burst-mode transfers and pipelined access. SDRAM sits in the memory IC hierarchy above asynchronous DRAM and below modern DDR/DDR2/DDR3 SDRAM, and remains relevant for legacy industrial controllers, set-top boxes, networking line cards, and embedded designs where the host MCU/ASIC predates DDR support. The 2-bank/2K-refresh architecture used by the K4S161622H family delivers the standard 2K refresh cycles per 32 ms while keeping command decoding simple for older memory controllers.
Key features include the 1Mx16 x 2-bank organization providing 16 Mb of storage with a 16-bit external data bus, LVTTL-compatible I/O for direct connection to 3.3 V ASICs and MCUs, a 50-pin TSOP2 outline suitable for socketed or hand-soldered legacy boards, and CMOS low-power operation. The -TC60 suffix denotes a commercial temperature range and the 60 speed grade in Samsung's H-die SDRAM nomenclature (sibling speed grades include -TC55, -TC70, -TC80, -TC10).
Architecturally, the K4S161622H implements a pipelined multi-bank structure with on-chip refresh counter, RAS/CAS addressing, and programmable burst length, giving it the deterministic timing required by 1990s-2000s era CPUs, DSPs, and graphics controllers. Its 16-bit wide data interface simplifies parity/ECC schemes and matches the external bus of many legacy processors.
Typical applications include industrial control boards, embedded networking equipment, legacy printer and display controllers, factory automation modules, and consumer electronics designs that retain SDRAM-compatible controllers. The wide 16-bit data path also suits display frame buffers and DSP working memory.
When designing with this device, ensure the controller supports 2-bank LVTTL SDRAM with 4096-cycle / 64 ms refresh, route CLK, CKE, and CS with matched impedance, and bulk-decouple the 3.3 V rail near the device. Verify the speed grade against your target clock frequency to avoid tRCD/tRP violations.
This page synthesizes distributor pricing, drop-in Samsung speed-grade alternatives, and practical legacy-design notes not collected in the original Samsung datasheet.
Alternatives de remplacement direct pour K4S161622H-TC60 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4S161622H-TC55
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4S161622H-TC70
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4S161622H-TC80
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4S161622H-TC10
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IS41LV16100B-60K
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4S161622H-TC60 Valeurs maximales et caractéristiques électriques
| Type de mémoire | Synchronous DRAM (SDRAM) |
| Memory Family | 16Mb H-die |
| Organisation de la mémoire | 1M x 16 (2 banks) |
| Density | 16 Mbit (2 MB) |
| Interface | LVTTL |
| Banks | 2 |
| Refresh | 2K / 32 ms (also quoted 4096 / 64 ms) |
| Supply Voltage (Min) | 3.0 V |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Typical) | 3.3 V |
| Speed Grade | TC60 (60 ns class) |
| Boîtier | TSOP2-50 (PDSO50), 0.80 mm pitch |
| Package Dimensions | 0.400 x 0.825 inch |
| Terminal Count | 50 |
| Technology | CMOS |
| Plage de température de fonctionnement | Commercial (TC suffix) |
Configuration des broches de K4S161622H-TC60
| Broche 1 | VDD — Power supply (3.3 V) |
| Broche 2 | DQ0 — Data I/O bit 0 |
| Broche 3 | DQ1 — Data I/O bit 1 |
| Broche 4 | DQ2 — Data I/O bit 2 |
| Broche 5 | DQ3 — Data I/O bit 3 |
| Broche 6 | VDDQ — DQ power supply (3.3 V) |
| Broche 7 | DQ4 — Data I/O bit 4 |
| Broche 8 | DQ5 — Data I/O bit 5 |
| Broche 9 | DQ6 — Data I/O bit 6 |
| Broche 10 | DQ7 — Data I/O bit 7 |
| Broche 11 | VDD — Power supply (3.3 V) |
| Broche 12 | LDQM — Lower-byte data mask |
| Broche 13 | WE — Write enable (active low) |
| Broche 14 | CAS — Column address strobe (active low) |
| Broche 15 | RAS — Row address strobe (active low) |
| Broche 16 | CS — Chip select (active low) |
| Broche 17 | BA0 — Bank address 0 |
| Broche 18 | BA1 — Bank address 1 |
| Broche 19 | A11 — Address bit 11 |
| Broche 20 | A10 — Address bit 10 |
| Broche 21 | A0 — Address bit 0 |
| Broche 22 | A1 — Address bit 1 |
| Broche 23 | A2 — Address bit 2 |
| Broche 24 | A3 — Address bit 3 |
| Broche 25 | VSS — Ground |
| Broche 26 | VSS — Ground |
| Broche 27 | A4 — Address bit 4 |
| Broche 28 | A5 — Address bit 5 |
| Broche 29 | A6 — Address bit 6 |
| Broche 30 | A7 — Address bit 7 |
| Broche 31 | A8 — Address bit 8 |
| Broche 32 | A9 — Address bit 9 |
| Broche 33 | NC — Not connected (per datasheet) |
| Broche 34 | CKE — Clock enable |
| Broche 35 | CLK — System clock input |
| Broche 36 | UDQM — Upper-byte data mask |
| Broche 37 | NC — Not connected (per datasheet) |
| Broche 38 | VDDQ — DQ power supply (3.3 V) |
| Broche 39 | DQ15 — Data I/O bit 15 |
| Broche 40 | DQ14 — Data I/O bit 14 |
| Broche 41 | DQ13 — Data I/O bit 13 |
| Broche 42 | DQ12 — Data I/O bit 12 |
| Broche 43 | DQ11 — Data I/O bit 11 |
| Broche 44 | VSS — Ground |
| Broche 45 | DQ10 — Data I/O bit 10 |
| Broche 46 | DQ9 — Data I/O bit 9 |
| Broche 47 | DQ8 — Data I/O bit 8 |
| Broche 48 | VSS — Ground |
| Broche 49 | NC — Not connected (per datasheet) |
| Broche 50 | VSS — Ground |
Applications typiques
K4S161622H-TC60 convient pour 6 applications: Legacy Industrial Controller Memory, Embedded Networking Line Card Buffer, Legacy Display / Frame Buffer Memory, DSP Working Memory, Set-Top Box / Consumer Embedded Buffer, Printer / MFP Image Memory.
Legacy Industrial Controller Memory
The K4S161622H-TC60's 1Mx16 organization, 2-bank LVTTL SDRAM interface, and 50-pin TSOP2 footprint make it a direct match for older industrial PLCs and motion controllers built around 3.3 V ASICs that pre-date DDR support. With 2 MB of storage and programmable burst lengths, the part serves as working memory for ladder-logic execution, real-time control loops, and HMI frame buffers while drawing minimal quiescent current from a 3.3 V rail. Its 60 ns speed grade suits controllers with 33-50 MHz external memory buses where tRCD and tRP timing must remain within the controller's published AC budget.
Recommandé
Embedded Networking Line Card Buffer
Legacy networking line cards and router blades based on early PowerPC or MIPS SoCs rely on 16-bit-wide SDRAM for packet buffering, descriptor memory, and routing-table cache. The K4S161622H-TC60's 16-bit external bus pairs cleanly with these SoCs' external memory controllers, and its 2-bank architecture lets the controller interleave row activations to hide precharge latency. The LVTTL interface connects directly to 3.3 V ASIC pins without level shifters, simplifying PCB layout, while the TSOP2-50 outline allows socketed prototype builds for firmware bring-up.
Recommandé
Legacy Display / Frame Buffer Memory
Small LCD controllers, character-display drivers, and early TFT panels use a 16-bit-wide working memory to hold frame data, font tables, and partial-screen update regions. The K4S161622H-TC60's 1Mx16 organization delivers exactly 2 MB - enough for a 480x272x16bpp frame buffer plus display lists - while the 3.3 V LVTTL bus matches legacy display-controller silicon without external buffering. The TSOP2-50 footprint lets designers place the SDRAM directly behind the connector, minimizing trace length and simplifying impedance control on FR-4.
Recommandé
DSP Working Memory
Legacy fixed-point DSPs (such as earlier TI TMS320C5x/C6x generations without DDR controllers) require 3.3 V LVTTL SDRAM for program and data memory expansion. The K4S161622H-TC60's 16-bit bus matches these DSPs' external memory interface, and the 2-bank architecture supports interleaved access patterns critical to FFT and convolution kernels. Burst-mode read/write with programmable CAS latency lets the controller sustain high-throughput DMA streams, while the 60 ns speed grade keeps the DSP's EMIF timing budget comfortably satisfied at moderate clock rates.
Recommandé
Set-Top Box / Consumer Embedded Buffer
Set-top boxes, DVD recorders, and home gateways from the late 1990s and early 2000s used 16 Mb SDRAM paired with MIPS or ARM7TDMI-class processors to hold MPEG transport streams, OSD graphics, and Java application heaps. The K4S161622H-TC60's 3.3 V supply and 2-bank LVTTL interface integrate cleanly into these cost-sensitive consumer designs, while its 50-pin TSOP2 footprint supports both SMT and socketed assembly. The 60 speed grade covers the modest clock rates typical of these hosts, providing headroom for OSD blending without tRP violations.
Recommandé
Printer / MFP Image Memory
Laser printers and multifunction devices need a 16-bit-wide working memory to rasterize pages at engine resolution and hold incoming PCL or PostScript jobs. The K4S161622H-TC60 supplies 2 MB of LVTTL SDRAM in a TSOP2-50 outline that fits alongside the printer's ASIC and image-processor ASICs on a compact PCB. The 60 ns access time matches typical raster clocks, while the 2-bank architecture lets the controller prefetch the next page band while the current one is being laser-exposed, sustaining throughput at engine speeds.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4S161622H-TC60 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4S161622H-TC55 | K4S161622H-TC70 | K4S161622H-TC80 | K4S161622H-TC10 | IS41LV16100B-60K |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | ISSI |
| Package | TSOP2-50 | TSOP2-50 - same | TSOP2-50 - same | TSOP2-50 - same | TSOP2-50 - same | TSOP2-50 - same |
| Density | 16 Mb (2 MB) | 16 Mb (2 MB) | 16 Mb (2 MB) | 16 Mb (2 MB) | 16 Mb (2 MB) | 16 Mb (2 MB) |
| Organization | 1M x 16 | 1M x 16 | 1M x 16 | 1M x 16 | 1M x 16 | 1M x 16 |
| Banks | 2 | 2 | 2 | 2 | 2 | 2 |
| Speed Grade | 60 | 55 (faster) | 70 (slower) | 80 (slower) | 10 (slowest) | 60 (same) |
| Interface | LVTTL | LVTTL | LVTTL | LVTTL | LVTTL | LVTTL |
| Supply Voltage | 3.0 V to 3.6 V (3.3 V typ) | 3.0 V to 3.6 V (3.3 V typ) | 3.0 V to 3.6 V (3.3 V typ) | 3.0 V to 3.6 V (3.3 V typ) | 3.0 V to 3.6 V (3.3 V typ) | 3.0 V to 3.6 V (3.3 V typ) |
| Lifecycle Status | Obsolete (2026-10-05) | Obsolete | Obsolete | Obsolete | Obsolete | Active (per ISSI) |
Principaux différenciateurs
- Pin-to-pin transparent speed-grade swap within Samsung H-die family (vs K4S161622H-TC70)
- JEDEC-standard LVTTL pinout enables cross-brand second source (vs IS41LV16100B-60K)
- Older -TC60 speed grade targets a specific controller timing budget (vs K4S161622H-TC10)
Notes de conception
Estimated: at 3.3 V supply and SDRAM read/write bursts, the K4S161622H-TC60 typically draws 60-90 mA active and falls to single-digit mA in self-refresh. Place a 0.1 uF ceramic bypass cap directly on each VDD and VDDQ pin pair (pads 1/11, 6, 38) plus a 10 uF bulk tantalum or polymer cap within 25 mm of the device. Keep VDD and VDDQ planes tied to the same 3.3 V rail with a ferrite bead only if your controller requires supply-rail noise isolation - otherwise short them together for lowest inductance.
Route CLK, CKE, CS, RAS, CAS, and WE as a matched-impedance bus (typically 50 ohm single-ended) and keep trace length matching to within 1 cm across the byte group. The 16 DQ lines should be routed with similar length matching and ground-referenced stripline or microstrip, because SDRAM read/write windows shrink dramatically with skew. Place a continuous ground plane under the TSOP2-50 footprint and avoid routing signals across the device's power-plane splits to prevent tRAC violations.
Common pitfalls: (1) omitting the mode-register MRS command in the firmware init sequence causes undefined CAS latency and burst length; (2) failing to issue 8 refresh cycles within the 32 ms (or 64 ms) window leads to bit corruption after a few minutes; (3) leaving CKE low during power-up prevents the SDRAM from exiting self-refresh and the controller will read garbage; (4) mixing VDD and VDDQ planes at different voltages damages the DQ drivers - both must be tied to the same 3.3 V rail. Always validate the controller's SDRAM init script against the Samsung H-die datasheet's command truth table before silicon bring-up.
The SDRAM's CLK line must present a clean 3.3 V LVTTL signal with rise/fall times under 2 ns. Add a 33 ohm series-damping resistor near the controller's CLK driver if the trace exceeds 50 mm, and avoid stubs by routing the CLK signal point-to-point. Place a 50 ohm termination to ground only if the SDRAM is at the far end of a long bus; for short PCB traces, source-series damping alone is sufficient. Verify CLK-to-DQS skew on an oscilloscope if you observe intermittent read errors.
Informations de conformité
Compliance status for K4S161622H-TC60 not present in the verified web data; Samsung's H-die family was originally released in the late 1990s, predating widespread RoHS documentation - confirm with Samsung or your distributor before using in RoHS-restricted designs
