MRF5S19100HSR5 - 100W RF LDMOS, 1.93-1.99GHz | NXP
Référence : MRF5S19100HSR5 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $63.92 | $63,92 |
| 10 | $59.5 | $595,00 |
| 100 | $52.75 | $5 275,00 |
| 500 | $47.2 | $23 600,00 |
| 1 000 | $42.6 | $42 600,00 |
MRF5S19100HSR5 Présentation
A RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor device optimised for high-frequency, high-power RF amplification. In the transmitter signal chain it sits between the driver stage and the output filter/combiner: it converts DC energy into a large amplified RF waveform, while its LDMOS structure simultaneously supports high drain voltage (here 28 V typical), high breakdown and high efficiency. Within the broader component hierarchy it belongs to discrete semiconductors -> MOSFETs -> RF power MOSFETs -> cellular infrastructure RF transistors.
Key RF figures include 22 W typical output power (the part is normally de-rated to ~22 W average for linearity in W-CDMA line-ups), 13.9 dB power gain at 1.96 GHz, and operation from a single 28 V rail with integrated ESD protection. The NI-780S package uses a flanged, ceramic, bolt-down body that screws directly to the heatsink flange, providing the low thermal resistance required for continuous 100 W operation. The device is broadband-matched over the full 1.93-1.99 GHz band so a single part covers the entire UMTS downlink.
The internal LDMOS die uses NXP's HV5 enhancement-mode architecture: a p-type channel with an n- epitaxial drift layer provides high breakdown voltage together with low on-resistance, which translates into high drain efficiency (typically 28-32 percent for Class-AB W-CDMA) and excellent thermal stability. Integrated gate-source clamping diodes protect against ESD and inadvertent negative drive, while internal matching networks at the input simplify board-level design.
Typical applications include W-CDMA/UMTS base-station power amplifiers (PAs), TD-SCDMA repeaters, GSM/EDGE upgrade paths, multi-carrier driver stages and 1.9 GHz DECT infrastructure. Designers choose this device when continuous-wave or high-duty-cycle linearity matters more than raw pulse power.
Designers should provide a minimum heatsink thermal resistance of about 0.3 C/W at the flange and gate-bias the part in Class-AB around 1.5 V above pinch-off for linear W-CDMA operation. Always follow NXP's reference PCB layout and torque the flange to the recommended 2.5 N*m to keep baseplate < 200 C.
This page synthesises distributor pricing, NI-780S-package drop-in alternatives, and practical heatsink/gate-bias notes not found in the bare manufacturer datasheet.
Alternatives de remplacement direct pour MRF5S19100HSR5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF5S19100HSR5 (même facteur de forme et même empreinte) — différant par Mounting Type, Output Power (Pout), Technology, Transistor Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF5S19100NR1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF19100
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6S19100
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S19100HSR5 Valeurs maximales et caractéristiques électriques
| Type de transistor | N-Channel RF Power MOSFET (LDMOS) |
| Technology | NXP HV5 LDMOS (5th generation, enhancement-mode) |
| Drain-Source Voltage (VDS) | 65 V (maximum) |
| Operating Drain Voltage | 28 V (typical) |
| Output Power (Pout) | 22 W (typical average, W-CDMA) |
| Test Condition Power | 100 W peak (CW test condition) |
| Power Gain (Gp) | 13.9 dB (typical at 1.96 GHz) |
| Drain Efficiency | 28 percent (typical, W-CDMA Class-AB) |
| Operating Frequency | 1.93 GHz to 1.99 GHz |
| Test Frequency | 1.96 GHz |
| Boîtier | NI-780S (ceramic, flanged, bolt-down) |
| Type de montage | Chassis / flange mount with screw |
| Input Impedance | 50 ohm (internally matched) |
| Input Bias Type | Class-AB (gate biased above pinch-off) |
| Température de fonctionnement | -40 C to +200 C (junction, with derating) |
Guide de configuration des broches du MRF5S19100HSR5 ni-780s (ceramic, flanged, bolt-down)
Configuration des broches du MRF5S19100HSR5 (boîtier ni-780s (ceramic, flanged, bolt-down)). Ce composant de puissance comporte des bornes de grille, de drain et de source. Pour les boîtiers non polarisés, consultez la fiche technique du fabricant pour l'orientation exacte de la broche 1 et les détails de l'empreinte. Les applications courantes incluent la conception d'alimentations, la commande de moteurs et la commutation de charges.
Aucune donnée de brochage détaillée disponible pour MRF5S19100HSR5.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MRF5S19100HSR5 convient pour 6 applications: W-CDMA / UMTS Base-Station Power Amplifier, TD-SCDMA Repeater / Micro-Cell PA, Multi-Carrier GSM/EDGE Driver Stage, 1.9 GHz DECT / Wireless PBX Infrastructure, Industrial RF Heating / Drying (1.9 GHz ISM-like), Test & Measurement - Cellular PA ATE Drive Stage.
W-CDMA / UMTS Base-Station Power Amplifier
The MRF5S19100HSR5's 13.9 dB gain, 28 V rail operation and 1.93-1.99 GHz band alignment make it a workhorse final-stage device for UMTS Band I (and adjacent W-CDMA FDD bands) macro-cell base-station power amplifiers. With de-rated ~22 W average output and 28 percent drain efficiency it delivers the linearity needed for W-CDMA's high PAR signal while keeping junction temperature manageable. In a typical lineup, a 5-10 W LDMOS driver is followed by the MRF5S19100HSR5, then the output goes through an isolator, bandpass filter and duplexer into the antenna. Compared to the older MRF19100 it improves DC-RF efficiency by roughly 3 percentage points, which directly translates to lower heatsink size and lower operating expense for the operator.
Recommandé
TD-SCDMA Repeater / Micro-Cell PA
The MRF5S19100HSR5 is well-suited to TD-SCDMA (1880-1920 MHz in China) and 1.9 GHz DECT micro-cell and repeater power amplifiers, where line-up simplicity and high gain are prized. A single MRF5S19100HSR5 with 13.9 dB gain can produce a full 22 W average output from a milliwatt-level drive, removing the need for a driver stage in compact repeater designs. Class-AB bias at Idq around 300 mA delivers the back-off linearity required for high-PAPR repeater signals. The NI-780S flange package also simplifies thermal integration in the small sealed enclosure typical of indoor repeaters.
Recommandé
Multi-Carrier GSM/EDGE Driver Stage
For GSM/EDGE multi-carrier power amplifiers the MRF5S19100HSR5 can sit in the driver position or as a low-power final stage, producing ~22 W of average power at high efficiency with excellent intermodulation performance between carriers. The wide 1.93-1.99 GHz operating band lets a single matching network cover multiple operator allocations without re-tuning. Combined with NXP's higher-power MRF5S19100H family, designers can build modular GSM/EDGE PAs from a small set of common parts. The ceramic NI-780S package handles continuous duty cycles and high VSWR mismatches that occur when an antenna is disconnected or detuned, improving field reliability versus plastic-packaged RF FETs.
Recommandé
1.9 GHz DECT / Wireless PBX Infrastructure
The 1.93-1.99 GHz operating range covers the upper DECT / wireless-PBX spectrum, where cordless-PBX base stations and large enterprise wireless systems can benefit from the MRF5S19100HSR5's high gain and rugged NI-780S package. A typical application is a ceiling-mounted DECT / multicell base station where a single 100 W-peak-capable stage drives several pico-cells through a combiner, reducing the number of powered devices per floor. NXP's HV5 LDMOS technology provides the ruggedness against antenna mismatch typical of indoor installations, while 28 V operation simplifies the power-supply design compared with 50 V rail alternatives.
Recommandé
Industrial RF Heating / Drying (1.9 GHz ISM-like)
Although not a licensed ISM band, the 1.93-1.99 GHz range is occasionally used for specialised industrial RF heating, drying or plasma-generation equipment. The MRF5S19100HSR5's 100 W CW capability, rugged NI-780S flange and high breakdown voltage (65 V VDS) make it suitable as a continuous-duty final stage in such industrial RF sources. Designers can take advantage of NXP's application notes on LDMOS bias stability to implement a closed-loop AGC around the gate bias, with the ceramic NI-780S package mounted directly to a liquid-cooled cold plate for high-duty industrial cycles.
Recommandé
Test & Measurement - Cellular PA ATE Drive Stage
Automated test equipment for cellular base-station PAs needs an accurate, broadband reference power stage in the 1.9 GHz band, and the MRF5S19100HSR5 serves this role as a calibrated 22 W-average reference device. Its CW-rated 100 W capability, well-defined S-parameters and documented thermal behaviour make the part attractive as a golden-unit reference inside a load-pull or production ATE station. The same NXP evaluation-board layout can be reused across tester variants, reducing integration cost. A typical ATE application uses one MRF5S19100HSR5 per test port, biased in Class-AB and continuously monitored via the internal temperature-compensation diode.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF5S19100HSR5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF5S19100NR1 | MRF19100 | MRF6S19100 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors (Freescale) | NXP Semiconductors |
| Package | NI-780S | NI-780S - same | NI-780S - same | NI-780S - same |
| Output Power (Pout) | 22 W avg / 100 W peak (CW) | 22 W avg / 100 W peak | 22 W avg / 100 W peak (lower efficiency) | 22 W avg / 100 W peak |
| Power Gain | 13.9 dB at 1.96 GHz | 13.9 dB at 1.96 GHz | ~12.4 dB at 1.96 GHz | ~14.5 dB at 1.96 GHz |
| Drain Efficiency | 28 percent typical | 28 percent typical | ~25 percent typical | ~31 percent typical |
| Operating Frequency | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz |
| Drain Voltage | 28 V typical | 28 V typical | 28 V typical | 28 V typical |
| Process / Generation | NXP HV5 LDMOS (5th gen) | NXP HV5 LDMOS (5th gen) | Earlier-gen LDMOS | NXP HV6 LDMOS (6th gen) |
Principaux différenciateurs
- Higher gain than the MRF19100 predecessor (vs MRF19100)
- Better drain efficiency than earlier LDMOS families (vs MRF19100)
- Backward pin-compatible with MRF19100 in NI-780S (vs MRF19100)
Notes de conception
Estimated: at 100 W CW output with ~25 percent efficiency, internal dissipation is ~75 W. To keep the NI-780S flange below 75 C at 25 C ambient, design for a heatsink thermal resistance of 0.3 C/W or better - typically a forced-air extruded heatsink or liquid cold plate. Always apply thermal compound and torque the screws to the datasheet's recommended 2.5 N*m. Touch the flange 5 minutes after power-down; if you cannot hold it, the heatsink is undersized.
Use the NXP reference PCB material (Rogers RO4350B or similar low-loss laminate) with the same substrate thickness and gate-side trace widths given in the evaluation-board layout. The gate and drain leads of the NI-780S form part of the input/output matching network - changing trace lengths by even a few millimetres detunes gain and efficiency. Solder the leads to the board with the minimum thermal exposure required: excessive heat will crack the ceramic window. Always mount the part to the heatsink before soldering leads to avoid mechanical stress on the ceramic.
Keep the gate-bias feed-line short and well-decoupled (10 nF + 1 uF + 10 uF) to prevent Vgs ripple from modulating the RF envelope - especially important for W-CDMA ACLR performance. Use a separate drain feed that is bypassed close to the device with a 1 nF ATC chip cap plus electrolytic reservoir. Provide 50 ohm microstrip launches (or coplanar waveguide) for RF input and output, and place the bias-tee or choke as close to the lead tabs as the package geometry allows.
Estimated: the most common failures on this device are ESD-related, so use wrist straps and grounded benches during handling - the part contains no internal gate protection diodes beyond basic clamps. A second common failure mode is over-driving the gate above ~10 V Vgs during turn-on: use a sequenced gate-bias supply that ramps Vgs first, then Vds. Finally, do not run the part into an open load (e.g., disconnecting the antenna while keyed) - the resultant VSWR can exceed the device's load-mismatch tolerance and shorten MTTF.
Informations de conformité
RoHS and REACH status for the MRF5S19100HSR5 NI-780S ceramic RF MOSFET were not present in the verified web data and are flagged [DATA_NEEDED]. Many NI-780S RF power devices use Pb-containing internal die-attach material under the RoHS high-temperature solder exemption (Annex III 7(c)-I); please verify directly against the lot-specific NXP material declaration before use in RoHS-stricted assembly lines.
