MRF5S19100HSR5 - 100W RF LDMOS, 1.93-1.99GHz | NXP
Teilenummer: MRF5S19100HSR5 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $63.92 | $63,92 |
| 10 | $59.5 | $595,00 |
| 100 | $52.75 | $5.275,00 |
| 500 | $47.2 | $23.600,00 |
| 1.000 | $42.6 | $42.600,00 |
MRF5S19100HSR5 Übersicht
A RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor device optimised for high-frequency, high-power RF amplification. In the transmitter signal chain it sits between the driver stage and the output filter/combiner: it converts DC energy into a large amplified RF waveform, while its LDMOS structure simultaneously supports high drain voltage (here 28 V typical), high breakdown and high efficiency. Within the broader component hierarchy it belongs to discrete semiconductors -> MOSFETs -> RF power MOSFETs -> cellular infrastructure RF transistors.
Key RF figures include 22 W typical output power (the part is normally de-rated to ~22 W average for linearity in W-CDMA line-ups), 13.9 dB power gain at 1.96 GHz, and operation from a single 28 V rail with integrated ESD protection. The NI-780S package uses a flanged, ceramic, bolt-down body that screws directly to the heatsink flange, providing the low thermal resistance required for continuous 100 W operation. The device is broadband-matched over the full 1.93-1.99 GHz band so a single part covers the entire UMTS downlink.
The internal LDMOS die uses NXP's HV5 enhancement-mode architecture: a p-type channel with an n- epitaxial drift layer provides high breakdown voltage together with low on-resistance, which translates into high drain efficiency (typically 28-32 percent for Class-AB W-CDMA) and excellent thermal stability. Integrated gate-source clamping diodes protect against ESD and inadvertent negative drive, while internal matching networks at the input simplify board-level design.
Typical applications include W-CDMA/UMTS base-station power amplifiers (PAs), TD-SCDMA repeaters, GSM/EDGE upgrade paths, multi-carrier driver stages and 1.9 GHz DECT infrastructure. Designers choose this device when continuous-wave or high-duty-cycle linearity matters more than raw pulse power.
Designers should provide a minimum heatsink thermal resistance of about 0.3 C/W at the flange and gate-bias the part in Class-AB around 1.5 V above pinch-off for linear W-CDMA operation. Always follow NXP's reference PCB layout and torque the flange to the recommended 2.5 N*m to keep baseplate < 200 C.
This page synthesises distributor pricing, NI-780S-package drop-in alternatives, and practical heatsink/gate-bias notes not found in the bare manufacturer datasheet.
Drop-in-Alternativen für MRF5S19100HSR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF5S19100NR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF19100
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S19100
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF5S19100HSR5 Grenzwerte & elektrische Eigenschaften
| Transistortyp | N-Channel RF Power MOSFET (LDMOS) |
| Technology | NXP HV5 LDMOS (5th generation, enhancement-mode) |
| Drain-Source Voltage (VDS) | 65 V (maximum) |
| Operating Drain Voltage | 28 V (typical) |
| Output Power (Pout) | 22 W (typical average, W-CDMA) |
| Test Condition Power | 100 W peak (CW test condition) |
| Power Gain (Gp) | 13.9 dB (typical at 1.96 GHz) |
| Drain Efficiency | 28 percent (typical, W-CDMA Class-AB) |
| Operating Frequency | 1.93 GHz to 1.99 GHz |
| Test Frequency | 1.96 GHz |
| Gehäuse | NI-780S (ceramic, flanged, bolt-down) |
| Montageart | Chassis / flange mount with screw |
| Input Impedance | 50 ohm (internally matched) |
| Input Bias Type | Class-AB (gate biased above pinch-off) |
| Betriebstemperatur | -40 C to +200 C (junction, with derating) |
MRF5S19100HSR5 ni-780s (ceramic, flanged, bolt-down) Pinbelegungsleitfaden
Pinbelegung für MRF5S19100HSR5 (ni-780s (ceramic, flanged, bolt-down)-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für MRF5S19100HSR5.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MRF5S19100HSR5 ist geeignet für 6 Anwendungs: W-CDMA / UMTS Base-Station Power Amplifier, TD-SCDMA Repeater / Micro-Cell PA, Multi-Carrier GSM/EDGE Driver Stage, 1.9 GHz DECT / Wireless PBX Infrastructure, Industrial RF Heating / Drying (1.9 GHz ISM-like), Test & Measurement - Cellular PA ATE Drive Stage.
W-CDMA / UMTS Base-Station Power Amplifier
The MRF5S19100HSR5's 13.9 dB gain, 28 V rail operation and 1.93-1.99 GHz band alignment make it a workhorse final-stage device for UMTS Band I (and adjacent W-CDMA FDD bands) macro-cell base-station power amplifiers. With de-rated ~22 W average output and 28 percent drain efficiency it delivers the linearity needed for W-CDMA's high PAR signal while keeping junction temperature manageable. In a typical lineup, a 5-10 W LDMOS driver is followed by the MRF5S19100HSR5, then the output goes through an isolator, bandpass filter and duplexer into the antenna. Compared to the older MRF19100 it improves DC-RF efficiency by roughly 3 percentage points, which directly translates to lower heatsink size and lower operating expense for the operator.
Empfohlen
TD-SCDMA Repeater / Micro-Cell PA
The MRF5S19100HSR5 is well-suited to TD-SCDMA (1880-1920 MHz in China) and 1.9 GHz DECT micro-cell and repeater power amplifiers, where line-up simplicity and high gain are prized. A single MRF5S19100HSR5 with 13.9 dB gain can produce a full 22 W average output from a milliwatt-level drive, removing the need for a driver stage in compact repeater designs. Class-AB bias at Idq around 300 mA delivers the back-off linearity required for high-PAPR repeater signals. The NI-780S flange package also simplifies thermal integration in the small sealed enclosure typical of indoor repeaters.
Empfohlen
Multi-Carrier GSM/EDGE Driver Stage
For GSM/EDGE multi-carrier power amplifiers the MRF5S19100HSR5 can sit in the driver position or as a low-power final stage, producing ~22 W of average power at high efficiency with excellent intermodulation performance between carriers. The wide 1.93-1.99 GHz operating band lets a single matching network cover multiple operator allocations without re-tuning. Combined with NXP's higher-power MRF5S19100H family, designers can build modular GSM/EDGE PAs from a small set of common parts. The ceramic NI-780S package handles continuous duty cycles and high VSWR mismatches that occur when an antenna is disconnected or detuned, improving field reliability versus plastic-packaged RF FETs.
Empfohlen
1.9 GHz DECT / Wireless PBX Infrastructure
The 1.93-1.99 GHz operating range covers the upper DECT / wireless-PBX spectrum, where cordless-PBX base stations and large enterprise wireless systems can benefit from the MRF5S19100HSR5's high gain and rugged NI-780S package. A typical application is a ceiling-mounted DECT / multicell base station where a single 100 W-peak-capable stage drives several pico-cells through a combiner, reducing the number of powered devices per floor. NXP's HV5 LDMOS technology provides the ruggedness against antenna mismatch typical of indoor installations, while 28 V operation simplifies the power-supply design compared with 50 V rail alternatives.
Empfohlen
Industrial RF Heating / Drying (1.9 GHz ISM-like)
Although not a licensed ISM band, the 1.93-1.99 GHz range is occasionally used for specialised industrial RF heating, drying or plasma-generation equipment. The MRF5S19100HSR5's 100 W CW capability, rugged NI-780S flange and high breakdown voltage (65 V VDS) make it suitable as a continuous-duty final stage in such industrial RF sources. Designers can take advantage of NXP's application notes on LDMOS bias stability to implement a closed-loop AGC around the gate bias, with the ceramic NI-780S package mounted directly to a liquid-cooled cold plate for high-duty industrial cycles.
Empfohlen
Test & Measurement - Cellular PA ATE Drive Stage
Automated test equipment for cellular base-station PAs needs an accurate, broadband reference power stage in the 1.9 GHz band, and the MRF5S19100HSR5 serves this role as a calibrated 22 W-average reference device. Its CW-rated 100 W capability, well-defined S-parameters and documented thermal behaviour make the part attractive as a golden-unit reference inside a load-pull or production ATE station. The same NXP evaluation-board layout can be reused across tester variants, reducing integration cost. A typical ATE application uses one MRF5S19100HSR5 per test port, biased in Class-AB and continuously monitored via the internal temperature-compensation diode.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF5S19100HSR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF5S19100NR1 | MRF19100 | MRF6S19100 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors (Freescale) | NXP Semiconductors |
| Package | NI-780S | NI-780S - same | NI-780S - same | NI-780S - same |
| Output Power (Pout) | 22 W avg / 100 W peak (CW) | 22 W avg / 100 W peak | 22 W avg / 100 W peak (lower efficiency) | 22 W avg / 100 W peak |
| Power Gain | 13.9 dB at 1.96 GHz | 13.9 dB at 1.96 GHz | ~12.4 dB at 1.96 GHz | ~14.5 dB at 1.96 GHz |
| Drain Efficiency | 28 percent typical | 28 percent typical | ~25 percent typical | ~31 percent typical |
| Operating Frequency | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz |
| Drain Voltage | 28 V typical | 28 V typical | 28 V typical | 28 V typical |
| Process / Generation | NXP HV5 LDMOS (5th gen) | NXP HV5 LDMOS (5th gen) | Earlier-gen LDMOS | NXP HV6 LDMOS (6th gen) |
Wichtigste Unterscheidungsmerkmale
- Higher gain than the MRF19100 predecessor (vs. MRF19100)
- Better drain efficiency than earlier LDMOS families (vs. MRF19100)
- Backward pin-compatible with MRF19100 in NI-780S (vs. MRF19100)
Designhinweise
Estimated: at 100 W CW output with ~25 percent efficiency, internal dissipation is ~75 W. To keep the NI-780S flange below 75 C at 25 C ambient, design for a heatsink thermal resistance of 0.3 C/W or better - typically a forced-air extruded heatsink or liquid cold plate. Always apply thermal compound and torque the screws to the datasheet's recommended 2.5 N*m. Touch the flange 5 minutes after power-down; if you cannot hold it, the heatsink is undersized.
Use the NXP reference PCB material (Rogers RO4350B or similar low-loss laminate) with the same substrate thickness and gate-side trace widths given in the evaluation-board layout. The gate and drain leads of the NI-780S form part of the input/output matching network - changing trace lengths by even a few millimetres detunes gain and efficiency. Solder the leads to the board with the minimum thermal exposure required: excessive heat will crack the ceramic window. Always mount the part to the heatsink before soldering leads to avoid mechanical stress on the ceramic.
Keep the gate-bias feed-line short and well-decoupled (10 nF + 1 uF + 10 uF) to prevent Vgs ripple from modulating the RF envelope - especially important for W-CDMA ACLR performance. Use a separate drain feed that is bypassed close to the device with a 1 nF ATC chip cap plus electrolytic reservoir. Provide 50 ohm microstrip launches (or coplanar waveguide) for RF input and output, and place the bias-tee or choke as close to the lead tabs as the package geometry allows.
Estimated: the most common failures on this device are ESD-related, so use wrist straps and grounded benches during handling - the part contains no internal gate protection diodes beyond basic clamps. A second common failure mode is over-driving the gate above ~10 V Vgs during turn-on: use a sequenced gate-bias supply that ramps Vgs first, then Vds. Finally, do not run the part into an open load (e.g., disconnecting the antenna while keyed) - the resultant VSWR can exceed the device's load-mismatch tolerance and shorten MTTF.
Compliance-Informationen
RoHS and REACH status for the MRF5S19100HSR5 NI-780S ceramic RF MOSFET were not present in the verified web data and are flagged [DATA_NEEDED]. Many NI-780S RF power devices use Pb-containing internal die-attach material under the RoHS high-temperature solder exemption (Annex III 7(c)-I); please verify directly against the lot-specific NXP material declaration before use in RoHS-stricted assembly lines.
