MRF5S9101MBR1 - 100W 869-960MHz LDMOS RF MOSFET | NXP
Référence : MRF5S9101MBR1 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $75 | $75,00 |
| 10 | $67.5 | $675,00 |
| 100 | $60 | $6 000,00 |
| 500 | $52.5 | $26 250,00 |
| 1 000 | $45 | $45 000,00 |
MRF5S9101MBR1 Présentation
What is an LDMOS RF MOSFET? An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized power MOSFET optimized for high-frequency RF amplification. Within the hierarchy of discrete semiconductors, LDMOS belongs to MOSFETs > transistors > discrete semiconductors. Unlike silicon bipolar junction transistors, LDMOS devices offer higher gain, better thermal stability, and superior ruggedness under mismatch conditions, making them the dominant technology for cellular base station power amplifiers from 700 MHz through 2.7 GHz.
Key features include a minimum power gain of 17.5 dB at 960 MHz, a maximum drain-source voltage rating of 68 V with a 26 V typical operating test condition, and a single-ended common-source configuration optimized for class AB operation. The lateral structure ensures excellent thermal coupling to the source leads, which serve as the primary heat-dissipation path to the PCB ground plane.
Technically, the MRF5S9101MBR1 employs NXP's industry-proven LDMOS VII process family, providing high breakdown voltage, low output capacitance, and integrated ESD protection. The device's high gain reduces the number of driver stages required in multi-stage PA lineups, lowering overall BOM cost and PCB footprint. The 100 W CW rating makes it equally suitable for pulsed radar and continuous-wave commercial wireless infrastructure.
Typical applications include GSM and GSM EDGE base station power amplifiers, 900 MHz multicarrier amplifier modules, RFID reader transmitters, industrial RF heating sources, and pulsed RF generators. The 869-960 MHz band matches global cellular uplink allocations including GSM900, LTE Band 8 uplink, and certain ISM-band applications.
When designing with this device, ensure the PCB ground plane provides a low-inductance thermal path to the source leads, and use a sufficiently rated drain bias supply with proper sequencing to prevent in-rush damage. Always operate within the SOA envelope at the published test bias of 26 V / 700 mA.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including cross-brand equivalents and PCB thermal guidance verified against NXP application notes.
Alternatives de remplacement direct pour MRF5S9101MBR1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF5S9101MBR1 (même facteur de forme et même empreinte) — différant par Mounting Type, Package / Case, Supplier Device Package, Technology, Transistor Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF5S9101MBR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF5S9101MR1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$49.95 / unité
Voir la fiche technique →MRF5S9101NBR1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF5S9101MBR1 Valeurs maximales et caractéristiques électriques
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz |
| Output Power (Pout) | 100 W |
| Power Gain (Gps) | 17.5 dB (min, at 960 MHz, 26 V) |
| Test Drain Voltage (Vdd) | 26 V |
| Test Drain Current (Idq) | 700 mA |
| Drain-Source Voltage Rating (Vdss) | 68 V |
| Configuration | Single, Common Source |
| Boîtier / Format | TO-272 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-272 WB-4 |
| Type de montage | Surface Mount |
| Maximum Power Dissipation | 427 W |
| Température de fonctionnement | -40C to +150C (TJ) |
| Lead-Free / Terminal Finish | Tin-Lead (per Partstack listing) |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Application Target | GSM / GSM EDGE Base Station Power Amplifiers |
Configuration des broches de MRF5S9101MBR1
| Broche 1 | DRAIN — RF output / drain bias connection |
| Broche 2 | SOURCE — Source / thermal ground (large copper area) |
| Broche 3 | GATE — RF input / gate bias connection |
| Broche 4 | SOURCE — Source / thermal ground (large copper area) |
DC Zone de fonctionnement sûr (estimated envelope, 26 V test bias)
Applications typiques
MRF5S9101MBR1 convient pour 6 applications: GSM / GSM EDGE Base Station Power Amplifier, Multicarrier Power Amplifier Module, RFID Reader Transmitter (UHF Band), Industrial RF Heating and Drying, Pulsed Radar Transmitter (L-Band Uplink), Repeater and Signal Booster Infrastructure.
GSM / GSM EDGE Base Station Power Amplifier
The MRF5S9101MBR1 is the canonical final-stage RF power transistor for 900 MHz GSM and GSM EDGE base station transceivers. Its 100 W CW output capability with 17.5 dB gain at 960 MHz comfortably drives a sector antenna from a single device, eliminating the need for parallel-combined PA pairs in standard macro-cell deployments. The 26 V test bias matches typical 48 V telecom rail-derived drain supplies after a DC-DC down-conversion stage, simplifying power architecture. Designers favor this LDMOS part for its broadband linearity across the 869-960 MHz uplink band, which allows multicarrier amplifier operation without per-carrier tuning. Combined with NXP's reference Doherty circuits, it enables high-efficiency EDGE modulation while meeting spectral emission masks.
Recommandé
Multicarrier Power Amplifier Module
Multicarrier amplifier (MCPA) designs in the 900 MHz cellular band leverage the MRF5S9101MBR1's 100 W rating to combine multiple GSM, EDGE, and UMTS carriers into a single amplification chain. The 17.5 dB gain reduces driver stage count, allowing compact PCB layouts with single-driver-plus-final topologies. According to the NXP application literature, the LDMOS technology provides excellent intermodulation distortion (IMD) performance critical for MCPA linearity budgets. Its 68 V Vdss rating gives generous headroom above the 26 V operating point, ensuring robust operation under VSWR mismatches typical of combined multi-carrier loads. Thermal management via direct PCB copper is essential at full 100 W continuous duty.
Recommandé
RFID Reader Transmitter (UHF Band)
In UHF RFID reader applications operating in the 902-928 MHz ISM sub-band, the MRF5S9101MBR1's 869-960 MHz frequency coverage and 100 W output power enable long-read-range interrogators for logistics, toll collection, and asset tracking. The 17.5 dB gain reduces the transmitter line-up complexity, while the TO-272 WB-4 surface-mount package supports automated high-volume assembly. Designers must implement circulator protection or careful antenna matching to absorb backscatter energy without exceeding the device's ruggedness envelope. The LDMOS technology's high breakdown voltage (68 V Vdss) provides margin against load-mismatch transients common in dense RFID tag populations.
Recommandé
Industrial RF Heating and Drying
Industrial 900 MHz RF heating systems for drying textiles, paper, food, and wood composites benefit from the MRF5S9101MBR1's 100 W continuous power delivery and high gain. The lateral MOSFET structure provides excellent thermal cycling endurance under intermittent duty cycles typical of conveyor-fed heating applications. Operating at 26 V with proper impedance-matching cavities allows efficient coupling into lossy dielectric loads. Designers should pair the device with NXP's reference oscillator circuits and implement reflected-power interlocks to protect the transistor from load-mismatch damage during material density variations.
Recommandé
Pulsed Radar Transmitter (L-Band Uplink)
Although optimized for CW operation, the MRF5S9101MBR1 can be deployed in pulsed radar and avionics transmitter chains operating in the 960 MHz region, where its 100 W capability and fast switching suit short-range surveillance radar. The LDMOS technology's high breakdown voltage and ruggedness tolerate high peak-to-average power ratios encountered in pulsed service. Designers must verify pulse thermal performance and consider duty-cycle derating versus the CW 427 W dissipation rating. The TO-272 WB-4 package's source-down configuration aids in direct heatsink mounting for airborne applications where PCB ground-plane cooling is insufficient.
Recommandé
Repeater and Signal Booster Infrastructure
Cellular repeaters and signal boosters for indoor coverage extension in the 900 MHz band use the MRF5S9101MBR1 as the final downlink amplification stage. Its 17.5 dB gain minimizes the cascaded noise figure impact of the booster chain, while 100 W output capability supports large-venue coverage. The LDMOS technology's broadband response accommodates simultaneous multi-operator amplification without retuning. According to NXP reference designs, the device pairs well with digital predistortion (DPD) linearization circuits to meet modern spectral emission requirements. Surface-mount packaging enables compact, repeatable manufacturing for high-volume repeater OEM deployments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF5S9101MBR1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF5S9101MBR5 | MRF5S9101MR1 | MRF5S9101NBR1 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-4 (Case 1486-03) | TO-272 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-04) - different footprint | TO-272 WB-4 (Case 1486-03) - same |
| Output Power | 100 W | 100 W | 100 W | 100 W |
| Frequency Range | 869 - 960 MHz | 869 - 960 MHz | 869 - 960 MHz | 869 - 960 MHz |
| Power Gain | 17.5 dB (min) | 17.5 dB (min) | 17.5 dB (min) | 17.5 dB (min) |
| Test Drain Voltage | 26 V | 26 V | 26 V | 26 V |
| Vdss Rating | 68 V | 68 V | 68 V | 68 V |
| Lifecycle Status | Obsolete (as of 2026-10) | Obsolete (same family) | Obsolete | Obsolete (legacy variant) |
Principaux différenciateurs
- Same-package drop-in replacement within same family (vs MRF5S9101MBR5)
- Higher gain than typical 900 MHz LDMOS predecessors (vs Older MRF5S9100 series)
- Established 100 W CW baseline for GSM base stations (vs Lower-power NXP MRF8S9120N (50 W))
Notes de conception
The MRF5S9101MBR1 dissipates up to 427 W maximum, and the TO-272 WB-4 package relies on the source leads as the primary thermal path. Solder the source pads directly to a substantial PCB copper spreader (at least 1 oz copper, ideally 2 oz, covering the full package footprint). Add an array of thermal vias (0.3 mm diameter, 1 mm pitch) connecting the top copper to an inner ground plane or back-side heatsink. Estimated: with 2 oz copper on a 4-layer board and 25 C ambient, theta_JA is approximately 0.4 C/W, enabling 100 W CW operation with junction temperature below 150 C when combined with forced-air cooling.
Maintain 50-ohm microstrip or stripline transmission lines from the gate and drain pads to the SMA connectors, with characteristic impedance verified by field-solver. Use Rogers RO4350B or Arlon AD1000 substrate for the matching network area to minimize dielectric loss at 960 MHz; FR-4 is acceptable for bias routing only. Keep gate and drain traces on opposite sides of the package (source isolation in between) to maximize gain and stability. Place bypass capacitors (100 pF, 10 nF, 1 uF) directly at the drain bias feed to suppress low-frequency oscillation.
Do not exceed the 68 V Vdss rating during bias transients; add a 56 V TVS diode or active voltage clamp at the drain supply. Always sequence gate bias before drain bias (typical: -1 V to +2 V gate walk-up) to prevent in-rush current spikes that can thermally stress the die. The part is lead-tin finished per the Partstack listing, so reflow profile must remain below 240 C peak for SnPb process compatibility. Avoid operating below 700 mA quiescent current, as class-AB gain compression and linearity degrade rapidly at low bias.
Place the input matching network (gate side) and output matching network (drain side) on opposite ends of the package to maximize isolation (typically >30 dB). Use bond-wire equivalent inductances modeled as 0.5-1 nH for source leads in simulation. Add a quarter-wave stub or radial stub at the drain bias feed for RF choking (50 ohm line, electrical length ~30 degrees at 960 MHz). For multistage PAs, isolate stages with 20 dB attenuator pads or buffer amplifiers if oscillation is observed under high VSWR.
The 17.5 dB gain at 960 MHz combined with package parasitics can produce out-of-band oscillation in the 2-4 GHz range if the matching network Q is too high. According to NXP LDMOS design guidelines, add a small series gate resistor (1-5 ohm) and parallel RC network (10 ohm + 10 pF) between gate and source to suppress parametric oscillation. Verify stability with a Vector Network Analyzer across 100 MHz to 6 GHz before final tuning. Monitor for odd-mode instability by sweeping input power from -10 dBm to +10 dBm and checking for anomalous gain peaks.
Informations de conformité
RoHS compliance status not confirmed in the verified web data; Partstack listing indicates tin-lead terminal finish which is generally non-RoHS compliant. This part is an RF power transistor designed for base station infrastructure and is not subject to AEC-Q100 automotive qualification. Engineers deploying in RoHS-restricted regions should request a RoHS-compliant variant or substitute with a current-generation NXP/Ampleon LDMOS that meets Directive 2011/65/EU.
