MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP
Référence : MRF5S9101MR1 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $72.1 | $721,00 |
| 100 | $64.85 | $6 485,00 |
| 500 | $57.2 | $28 600,00 |
| 1 000 | $49.95 | $49 950,00 |
MRF5S9101MR1 Présentation
A Radio Frequency power transistor is a specialized discrete semiconductor designed to amplify high-frequency signals with substantial output power while maintaining acceptable efficiency and linearity. These devices sit at the final stage of a transmitter chain, immediately before the antenna or filter network, and belong to the broader category of power amplifiers. Within that taxonomy, LDMOS is the dominant silicon technology for sub-3 GHz base-station transmitters because it offers higher gain, better ruggedness, and lower cost-per-watt than competing GaAs or SiGe solutions.
Key specifications of the MRF5S9101MR1 include 17.5 dB power gain measured at 960 MHz / 26 V / 700 mA, a 68 V maximum drain-source voltage rating, 100 W POUT, and 700 mA quiescent test current. The device is rated for 26 V operation and is characterized for both pulsed and CW waveforms in single-carrier and multi-carrier amplifier (MCPA) topologies. The TO-270 WB-4 flange package provides a low thermal-resistance path to the heatsink, enabling continuous operation at full rated output with a conventional extruded aluminum fin.
The MRF5S9101MR1 uses NXP's fifth-generation high-voltage LDMOS process, which integrates an anti-static gate protection network and a thermally matched lead frame. This architecture offers improved thermal conductivity versus earlier MRF5-series packages and supports the high peak-to-average ratios of EDGE and multi-carrier waveforms. The device is also internally matched for input impedance at 900 MHz, simplifying board-level integration with standard microstrip or stripline balun networks.
Typical applications include GSM 900, GSM EDGE 900, and N-CDMA base-station power amplifiers operating in the 869-960 MHz cellular band, as well as multi-carrier amplifier (MCPA) modules, repeaters, and industrial RF heating sub-assemblies. Designers pair the transistor with an NXP or third-driver LDMOS stage (for example MRF5S2100 or similar drivers) to assemble the full RF chain.
When designing with the MRF5S9101MR1, ensure the heatsink compound interface has a thermal resistance below 0.3 C/W and the supply rail includes sufficient bulk capacitance to support peak pulsed current without voltage collapse. The lead-free MRF5S9101NR1/NBR1 variant is form, fit, and function equivalent and replaces the MR1 part where Pb-free assembly is required.
This page consolidates distributor pricing, parameter comparison, drop-in alternatives, and practical RF design guidance not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MRF5S9101MR1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF5S9101MR1 (même facteur de forme et même empreinte) — différant par Mounting Type, Package / Case, Transistor Type, Application, Power Gain.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF5S9101NR1
✅ Remplacement direct✓ En stock
$61.4 / unité
Voir la fiche technique →MRF5S9101NBR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S9101MBR1
✅ Remplacement direct✓ En stock
$45 / unité
Voir la fiche technique →MRF5S9101MR1 Valeurs maximales et caractéristiques électriques
| Type de transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | RF Power Field Effect Transistor |
| Frequency Range | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz |
| Test Voltage | 26 V |
| Test Current (Quiescent) | 700 mA |
| Power Output (POUT) | 100 W (CW) |
| Power Gain | 17.5 dB at 960 MHz |
| Drain-Source Voltage (Rated) | 68 V |
| Boîtier / Format | TO-270 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-270 WB-4 |
| Type de montage | Chassis / Flange Mount (through-hole flange) |
| Lead Free Status | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) |
| Statut RoHS | Compliant (lead-free N-suffix variants) |
| Application | GSM / GSM EDGE / N-CDMA base station final-stage PA |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
Guide de configuration des broches du MRF5S9101MR1 to-270 wb-4
Configuration des broches du MRF5S9101MR1 (boîtier to-270 wb-4). Ce composant de puissance comporte des bornes de grille, de drain et de source. Pour les boîtiers non polarisés, consultez la fiche technique du fabricant pour l'orientation exacte de la broche 1 et les détails de l'empreinte. Les applications courantes incluent la conception d'alimentations, la commande de moteurs et la commutation de charges.
Aucune donnée de brochage détaillée disponible pour MRF5S9101MR1.
Consultez la fiche technique pour la configuration complète des broches.
Estimated DC Zone de fonctionnement sûr (MRF5S9101MR1)
Applications typiques
MRF5S9101MR1 convient pour 6 applications: GSM 900 Base Station Final Stage, GSM EDGE Multi-Carrier Amplifier (MCPA), N-CDMA Base Station Power Amplifier, Cellular Repeater and Booster PA, Industrial RF Heating Generator, Public-Safety / Land-Mobile Radio Repeater.
GSM 900 Base Station Final Stage
The MRF5S9101MR1's 100 W CW output capability at 26 V and 17.5 dB gain make it a natural choice for the final power amplifier stage of a 900 MHz GSM base-station transmitter. Its TO-270 WB-4 flange package mounts directly to a chassis-spreader heatsink for sustained CW operation. Placed downstream of a balanced driver pair and inter-stage matching network, it produces the high-purity, high-linearity RF envelope required at the antenna feed. Designers benefit from the device's internal matching around 900 MHz, which simplifies the output combiners and reduces PCB iteration. The 68 V drain rating also provides 2.6:1 derating versus the 26 V operating rail, an engineering factor that improves long-term reliability against transient load-pulling from antenna mismatch events.
Recommandé
GSM EDGE Multi-Carrier Amplifier (MCPA)
Multi-carrier amplifier modules feeding two or more GSM EDGE carriers through a common final stage benefit from the MRF5S9101MR1's high gain and good linearity at 900 MHz. With 26 V bias and 700 mA quiescent current, the LDMOS part can swing 100 W of composite output power while keeping intermodulation spurs low enough for the EDGE modulation mask. Internally matched input impedance at 960 MHz reduces the need for lossy inter-stage networks, and the wide frequency coverage from 869 to 960 MHz accommodates all cellular bands worldwide. Compared with older silicon bipolar finals, the LDMOS part delivers cleaner error-vector-magnitude (EVM) at the high peak-to-average ratios of EDGE bursts, making it easier to meet spectral-emissions masks with moderate output filtering.
Recommandé
N-CDMA Base Station Power Amplifier
Originally specified for N-CDMA final stages by NXP/Freescale, the MRF5S9101MR1 remains a popular drop-in or new-build part for legacy N-CDMA base station transmitters operating in the 869-960 MHz band. Its 100 W continuous output rating, low memory-effect characteristics, and TO-270 flange-mount packaging align with the high-linearity requirements of direct-sequence spread signals. Designers integrate the part into a Doherty configuration for efficiency enhancement, where its 17.5 dB gain provides sufficient loop margin for the peaking amplifier. The transistor's high ruggedness against 10:1 VSWR allows it to ride out antenna disconnect events during transmitter commissioning, an important operational consideration in dense cellular deployments.
Recommandé
Cellular Repeater and Booster PA
Off-air repeaters and indoor cellular boosters operating in the 900 MHz band often need a 50-100 W final stage to extend coverage, and the MRF5S9101MR1 fits exactly that requirement. Its 17.5 dB gain lets the FPGA-based DSP correction loop converge with low residual error after digital predistortion, while the 26 V supply rail simplifies AGC implementation. Used at the head-end of an optical-fiber-distributed DAS system, this NXP LDMOS part delivers the linear power required to feed multiple remote antenna units. The internally-matched input network reduces the booster's BOM count, and the TO-270 package mates with standard outdoor repeater heatsink assemblies.
Recommandé
Industrial RF Heating Generator
Beyond telecom, the MRF5S9101MR1 is well suited to industrial-class RF generators operating at 869-960 MHz for dielectric heating, food processing, and plasma excitation applications. At 100 W continuous output with proper cooling, it sustains the load long enough for commercial process throughput. Engineers appreciate its 68 V drain rating, which provides extra margin against load mismatch in unfamiliar material loads, and its enhancement-mode gate allows simple +5 V class-C biasing. Compared to vacuum tubes at this power level, the LDMOS part delivers comparable RF output with significantly lower operating cost, easier bias control, and immediate turn-on/turn-off.
Recommandé
Public-Safety / Land-Mobile Radio Repeater
Public-safety repeaters operating near 900 MHz can leverage the MRF5S9101MR1 for the final PA stage, taking advantage of its 100 W output and ruggedness against antenna mismatch. Its broadband gain response across 869-960 MHz covers trunked radio, P25, TETRA-style, and adjacent public-safety bands without retuning. The TO-270 flange package installs directly into the repeater's chassis as a conduction-cooled stage, supporting 24/7 duty cycles demanded by emergency-service communications. Designers add an isolator at the output to protect the LDMOS part from antenna faults during field deployment and vehicular-mobile install environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF5S9101MR1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF5S9101NR1 | MRF5S9101NBR1 | MRF5S9101MBR1 |
|---|---|---|---|---|
| Package | TO-270 WB-4 (Case 1486-03) | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Frequency Range | 869-960 MHz | 869-960 MHz | 869-960 MHz | 869-960 MHz |
| Output Power (POUT) | 100 W CW | 100 W CW | 100 W CW | 100 W CW |
| Power Gain | 17.5 dB at 960 MHz | 17.5 dB at 960 MHz | 17.5 dB at 960 MHz | 17.5 dB at 960 MHz |
| Test Voltage | 26 V | 26 V | 26 V | 26 V |
| Drain-Source Voltage (Rated) | 68 V | 68 V | 68 V | 68 V |
| Lead Finish | Tin-Lead (SnPb) - legacy | Lead-free (Pb-free) RoHS | Lead-free (Pb-free) RoHS | Tin-Lead (SnPb) - leaded equivalent |
| Packaging Format | Tape & Reel (MR1 suffix) | Tape & Reel (NR1 suffix) | Bulk / Tube (NBR1 suffix) | Tape & Reel (MBR1 suffix) |
| RoHS Compliance | Not RoHS (SnPb finish) | RoHS compliant | RoHS compliant | Not RoHS (SnPb finish) |
Principaux différenciateurs
- Mature form/fit/function replacement path with explicit NXP endorsement (vs MRF5S9101NR1)
- Bulk packaging option for low-volume assembly (vs MRF5S9101NBR1)
- Highest cross-brand parts availability on Rochester Electronics (vs MRF5S9101MBR1)
Notes de conception
Estimated: at 100 W CW output and ~55% efficiency, the MRF5S9101MR1 dissipates approximately 80 W of heat. Use a high-grade silicone thermal interface material (TIM) and an extruded aluminum heatsink with thermal resistance below 0.2 C/W, plus forced-air cooling if the chassis temperature rises above 50 C. Mount the flange with the recommended torque to avoid warping the case-to-flange joint, which would increase RθJC.
The TO-270 WB-4 flange is meant for chassis-mount through-hole fastening. The RF input and output leads are formed and soldered into a microstrip or stripline on the PCB adjacent to the heatsink. Keep the gate-bias trace as short and guard-traced as possible; long bias traces can introduce low-frequency memory effects that degrade digital predistortion performance in MCPA designs.
When replacing MRF5S9101MR1 with the NR1 or NBR1 lead-free variant, verify the assembly oven profile accommodates lead-free reflow (peak 245-260 C). The N-suffix parts use NiPdAu or matte-tin finish that requires higher peak temperature than the SnPb-finished MR1 part. Per NXP, no electrical or mechanical re-tuning is required between the variants.
Place a 47-100 uF bulk aluminum-polymer or aluminum-electrolytic capacitor directly at the 26 V drain feed to handle the 700 mA pulsed current. According to the datasheet typical application, a quarter-wave microstrip stub on the gate and drain provides stability margin and prevents parametric oscillation above 1 GHz. Avoid routing sensitive control lines across the output matching network to prevent unintended feedback.
Informations de conformité
MRF5S9101MR1 (MR-suffix) is SnPb-leaded and not RoHS compliant. The lead-free N-suffix variants (MRF5S9101NR1 and MRF5S9101NBR1) are RoHS compliant and replace the MR1 part without re-engineering. Halogen-free status was not stated in the verified data and is recorded as 'unknown'. REACH compliance inferred from NXP corporate compliance statements.
