MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
Référence : MRF6S19140HSR5 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $32.1 | $3 210,00 |
| 500 | $28.75 | $14 375,00 |
| 1 000 | $25.4 | $25 400,00 |
MRF6S19140HSR5 Présentation
An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor power device optimized for high-frequency amplification in the hundreds-of-MHz to multi-GHz range. It sits within the broader taxonomy: RF power transistor -> discrete semiconductor -> RF power amplifier (PA) building block -> wireless infrastructure front-end. Unlike small-signal RF FETs, LDMOS parts handle tens of watts of continuous and peak power, making them the dominant technology for cellular base-station PAs since the early 2000s.
Key features of the MRF6S19140HSR5 include a 28 V typical operating drain voltage, 29 W pulsed output power under W-CDMA conditions, 16 dB linear gain, integrated electrostatic discharge (ESD) protection, and a broadband-input 50-ohm match-friendly package geometry. The NI-880S ceramic package provides low thermal resistance suitable for fan-cooled base-station thermal envelopes and screw-down or clamp heat-sink attachment.
Architecturally, the MRF6S19140HSR5 uses NXP's sixth-generation HV6 LDMOS process, which improves power density and thermal performance over earlier MRF6 generations. The high gain (16 dB) reduces the driver-stage complexity in multi-carrier PA lineups and is compatible with standard Doherty amplifier configurations.
Typical applications include W-CDMA, TD-SCDMA, and LTE base-station power amplifiers operating in the 1.93-1.99 GHz UMTS band, as well as repeaters, microcells, and driver stages for higher-power macro base stations. The device suits single-ended or push-pull final-stage PA designs.
When designing with this device, note that the quiescent bias point, gate-bias sequencing, and output-harmonic termination network all materially affect linearity and ACPR. Use a DC-blanked gate bias supply to prevent thermal runaway during high VSWR events.
This page synthesizes distributor pricing, same-family drop-in references, and design considerations not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MRF6S19140HSR5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF6S19140HSR5 (même facteur de forme et même empreinte) — différant par Drain-Source Voltage (Vdss), Manufacturer, Mounting Type, Output Power (Pout), Package / Case.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF6S19140HSR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6S19140HR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$82.4 / unité
Voir la fiche technique →MRF6S19140NR3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF8S19140NR3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF6S19060NR3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF6S19140HSR5 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors |
| Original Manufacturer | Freescale Semiconductor |
| Part Status | Active |
| Type de transistor | RF Power LDMOS (N-Channel) |
| Drain-Source Voltage (Vdss) | 68 V |
| Operating Drain Voltage (typical) | 28 V |
| Drain Current (Id) | 1.15 A |
| Frequency Range | 1.93 GHz to 1.99 GHz |
| Output Power (Pout) | 29 W |
| Power Gain (Gps) | 16 dB |
| Test Condition | Two-tone W-CDMA, 1.96 GHz |
| Boîtier / Format | NI-880S |
| Type de montage | Chassis Mount / Screw Clamp |
| Température de fonctionnement | -40 C to +150 C (junction) |
| ESD Protection | Yes (integrated) |
| Technology | HV6 LDMOS (later branded NXP HV6) |
Configuration des broches de MRF6S19140HSR5
| Broche 1 | DRAIN — RF output drain terminal (top flange body) |
| Broche 2 | GATE — RF input gate terminal (one side lead) |
| Broche 3 | SOURCE — Source terminal (chassis/flange body) |
Applications typiques
MRF6S19140HSR5 convient pour 6 applications: UMTS Band W-CDMA Base-Station Power Amplifier, LTE Small-Cell Power Amplifier Stage, RF Repeater and Booster Final Stage, Doherty Amplifier Carrier or Peaking Stage, Industrial RF Heating and Plasma Drive Source, Public-Safety and Private LTE Base Station PA.
UMTS Band W-CDMA Base-Station Power Amplifier
The MRF6S19140HSR5's 29 W output at 28 V and 16 dB gain at 1.96 GHz directly satisfy the final-stage PA requirements of single-carrier W-CDMA macro base-station lineups in the 1.93-1.99 GHz UMTS band. Its HV6 LDMOS process delivers ACPR-compliant linearity at the output back-off points typical of UMTS deployments, and the 16 dB gain eases the driver-stage gain budget by comparison with older 13-14 dB parts. Placed as the final LDMOS device after the driver stage, it sits behind a quarter-wave output combiner and harmonic trap network; unlike GaN PAs of similar power it does not require a negative supply rail but does require tight gate-bias regulation for thermal stability.
Recommandé
LTE Small-Cell Power Amplifier Stage
LTE small-cell radios operating at 1.96 GHz benefit from the 29 W peak power of the MRF6S19140HSR5 while keeping the die count low in tightly size-constrained enclosures. The 16 dB gain reduces the LNA/PA chain footprint compared to lower-gain parts and the NI-880S chassis-mount package allows the small-cell heatsink to double as an RF shielding surface. Used as the final PA in microcell or picocell LTE designs, it must be paired with a DPD-based digital pre-distortion loop to meet the stricter LTE ACLR masks; the device's HV6 process supports the wider signal-bandwidth linearity LTE requires where older W-CDMA-only parts fall short.
Recommandé
RF Repeater and Booster Final Stage
In W-CDMA/LTE repeater deployments, the MRF6S19140HSR5 serves as the final-stage power driver delivering 29 W at 1.93-1.99 GHz to compensate for path loss in donor antenna-to-mobile link scenarios. The 28 V supply is compatible with standard 48 V-to-28 V DC-DC converter rails found in outdoor repeater enclosures, and the 16 dB gain helps engineers meet the linearity target without cascading additional pre-amplifier stages. Positioned between the IF-to-RF upconversion mixer chain and the duplexer output, it requires careful input matching to avoid re-modulating the in-band signal; the device's high gain lowers the overall repeater noise figure contribution compared to discrete BJT alternatives.
Recommandé
Doherty Amplifier Carrier or Peaking Stage
The MRF6S19140HSR5 is widely deployed as the peaking or carrier half of a Doherty amplifier for high-efficiency W-CDMA and LTE base-station PAs at 1.96 GHz. NXP's HV6 LDMOS process supports the high back-off efficiency Doherty topology requires, with 16 dB gain keeping the peaking branch driver budget modest when two devices are impedance-combined. Used at the Doherty combiner's output, the device's gain and phase linearity must be matched between carrier and peaking halves; engineers typically bin devices for matched gain. Proper drain bias sequencing and a properly designed output offset-line guarantee the +5-7 percentage-point efficiency improvement Doherty provides over Class-AB at 6-8 dB back-off.
Recommandé
Industrial RF Heating and Plasma Drive Source
Industrial RF heating installations and plasma-generation drivers operating in the UHF 1.93-1.99 GHz range can deploy the MRF6S19140HSR5 as the final power stage due to its 29 W continuous-wave capability and 16 dB gain. The 28 V supply voltage simplifies the DC bus architecture compared to legacy 50 V part designs, and the integrated ESD protection enhances manufacturing yield on high-volume industrial lines. Its bandwidth allows easy re-tuning for adjacent UHF-band applications by component value swaps in the matching network; unlike vacuum-tube PA alternatives it requires no warm-up time and has an order-of-magnitude better mean time between failure (MTBF) in continuous industrial operation.
Recommandé
Public-Safety and Private LTE Base Station PA
Public-safety LTE networks operating in 1.93-1.99 GHz FirstNet-style bands leverage the MRF6S19140HSR5's 29 W output to drive cell-edge coverage from a single PA device, simplifying BDA (bi-directional amplifier) building layouts. The 16 dB gain headroom simplifies the margin calculations for the rough coverage modeling typical of in-building public-safety deployments. Mounted in a BDA enclosure, it must dissipate its 35-40 W thermal output through a generous heat-sink fin area and forced-air cooling; thermal management is the single biggest determinant of public-safety PA uptime because mandated 99.999% availability targets leave no margin for thermal-induced performance drift.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF6S19140HSR5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF6S19140HSR3 | MRF6S19140HR5 | MRF6S19140NR3 | MRF8S19140NR3 | MRF6S19060NR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880S | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same |
| Frequency Range | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz |
| Output Power | 29 W | 29 W | 29 W | 29 W | 29 W (HV8 process) | 60 W |
| Operating Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Power Gain | 16 dB | 16 dB | 16 dB | 16 dB | 17 dB | 15 dB |
| LDMOS Process Generation | HV6 | HV6 | HV6 | HV6 | HV8 | HV6 |
| Reel Packaging | R5 (500-piece reel) | R3 (3,000-piece reel) | R5 (500-piece reel) | R3 (3,000-piece reel) | R3 (3,000-piece reel) | R3 (3,000-piece reel) |
Principaux différenciateurs
- Higher gain reduces driver-stage complexity by 2-4 dB (vs MRF6S18140 series (lower-gain predecessor))
- HV6 process reaches higher operating efficiency in UMTS band than MRF7S family (vs MRF7S19140 series alternative)
- R5 reel packaging supports low-quantity prototyping without 3,000-piece MOQ (vs MRF6S19140HSR3)
Notes de conception
Estimated: at 29 W output and ~45% PAE, internal dissipation is approximately 33-37 W. With NI-880S Rth around 0.5 C/W and a chassis-mount heat sink at +60 C, junction can approach 175 C - close to the silicon limit. Use a forced-air-cooled heat sink sized to keep case temperature below +85 C, apply thermal interface material at the flange, and follow NXP torque specs in the datasheet application note.
Apply gate bias before applying drain voltage to prevent in-rush current damage. Use a regulated negative bias supply for bias shutdown so a high VSWR event cannot cause destructive thermal runaway. Designers commonly forget that LDMOS requires sequencing not only at power-up but also at fast shut-down; an abrupt gate discharge without proper sequencing can forward-bias the source-body junction and degrade linearity.
Use a low-loss substrate like Rogers RO4350B for the matching networks and ensure the RF traces are 50-ohm controlled-impedance with consistent ground stitching vias along the drain and gate leads. The NI-880S package has 0.040-inch lead pitch compatible with standard thick-film ceramic substrates; do not use FR-4 for the RF-matching section since its loss tangent materially degrades efficiency. Place gate-bias decoupling within 5 mm of the gate lead to prevent low-frequency gain modulation.
Informations de conformité
RoHS, REACH, lead-free, and halogen-free values for MRF6S19140HSR5 not present in the verified web data provided; set to unknown per data-authenticity rules. AEC-Q100 not applicable for RF power transistors. Conflict-minerals compliance assumed compliant per NXP general policy.
