MRF7S27130HSR5 - 2.7GHz 130W RF Power MOSFET | NXP
Référence : MRF7S27130HSR5 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $88 | $880,00 |
| 100 | $82 | $8 200,00 |
| 500 | $75 | $37 500,00 |
| 1 000 | $68 | $68 000,00 |
MRF7S27130HSR5 Présentation
What is an RF power MOSFET? An RF power MOSFET (radio-frequency metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized to deliver high RF output power at high frequencies with high gain and reasonable efficiency. Within the broader hierarchy, RF MOSFETs sit under discrete semiconductors → transistors → MOSFETs → RF MOSFETs → laterally-diffused (LDMOS) RF devices. LDMOS has become the dominant RF PA technology for sub-3 GHz wireless infrastructure because it combines high gain, high power density, simple gate biasing, and excellent ruggedness into 50 Ω-matched ceramic or plastic packages.
Key specifications of the MRF7S27130HSR5 include a drain-source breakdown of 65 V, a maximum continuous drain current of approximately 1.5 A, an operating frequency up to 2.7 GHz, 16.5 dB typical power gain, and 23 W typical CW output power in the matched reference circuit (the 130 W figure refers to pulsed / Doherty operation modes documented in the NXP datasheet). The ceramic NI-780S package provides low parasitic inductance and a bolt-down flange for direct heatsink mounting, giving it a thermal resistance (junction-to-case) on the order of 0.4–0.5 °C/W that supports the high dissipation of a 100 W-class PA.
Architecturally, the device is an enhancement-mode N-channel LDMOS transistor built on NXP's HV7 RF power platform. Internally it integrates the input prematch, ESD structures, and a single source bond pad that can be grounded either through the package flange or through external leads, simplifying board-level bypass and improving broadband stability. The 28 V nominal VDS balances conduction loss against breakdown margin for typical cellular PA efficiencies of 50–60%.
Typical applications include 2.6 GHz LTE / WiMAX base-station final-stage PAs, S-band industrial-scientific-medical (ISM) band transmitters, and pulsed-radar or DVB-T driver stages where the device's high gain reduces the number of driver stages required. The NI-780S package is also field-proven for Doherty amplifier topologies at 130 W average power.
When designing with the MRF7S27130HSR5, ensure low-inductance source grounding via the package flange and a sufficiently large copper or aluminum heatsink to keep the channel below 200 °C at full CW power. Use NXP's reference design PCB stackup and matching network to preserve the published gain and efficiency numbers.
This page synthesizes distributor pricing, same-NXP family drop-in alternatives, and practical thermal/RF design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour MRF7S27130HSR5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF7S27130HR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF7S21150HSR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF7S18150HSR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF7S21170HSR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF7S26150HSR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF7S27130HSR5 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF7S HV7 RF Power LDMOS |
| Type de transistor | N-Channel RF Power MOSFET (LDMOS) |
| Operating Frequency Range | 2.5 GHz to 2.7 GHz |
| Typical Operating Frequency | 2.7 GHz |
| Drain-Source Voltage (VDS) | 28 V (operating), 65 V (max breakdown) |
| Continuous Drain Current | 1.5 A |
| Output Power (Pout) | 130 W (pulsed/Doherty), 23 W typical CW in reference circuit |
| Power Gain | 16.5 dB typical |
| Configuration | Single-ended, common source |
| Mode of Operation | Class AB (linear), Doherty capable |
| Boîtier | NI-780S (3-pin air-cavity ceramic, bolt-down flange) |
| Nombre de broches | 3 (Gate, Drain, Source) |
| Type de montage | Chassis / heatsink mount (flanged) |
| Statut RoHS | Compliant |
| Température de fonctionnement | -40 °C to +150 °C (junction max 225 °C) |
Configuration des broches de MRF7S27130HSR5
| Broche 1 | Gate — Gate bias input; requires low-noise DC bias with RF decoupling |
| Broche 2 | Drain — RF output / DC supply input (VDS = 28 V) |
| Broche 3 | Source — Source return; also grounded through flange |
| Broche Flange | Source / Thermal — Bolt-down flange - electrically source, thermally heatsink interface (junction-to-case) |
Zone de fonctionnement sûr (DC / pulsed)
Applications typiques
MRF7S27130HSR5 convient pour 6 applications: LTE Band 7 / 2.6 GHz Macro-Cell Base-Station PA, WiMAX 2.6 GHz Customer-Premises Equipment PA, S-Band 2.7 GHz Pulsed-Radar Driver Amplifier, Industrial-Scientific-Medical 2.4-2.5 GHz Transmitters, DVB-T / DVB-H Transmitter Final Stage, Defense / Tactical Radio RF Power Stage.
LTE Band 7 / 2.6 GHz Macro-Cell Base-Station PA
The MRF7S27130HSR5's 2.5-2.7 GHz operating band and 130 W Doherty-class power level make it a textbook final-stage device for LTE Band 7 (2620-2690 MHz) macro-cell base-station power amplifiers. Its 16.5 dB gain and 28 V operation enable a single-stage PA with 50-55% drain efficiency at 8 dB back-off, meeting LTE spectral-emission masks without heavy digital pre-distortion. The 28 V bias and NI-780S bolt-down package integrate directly into industry-standard PA module heatsink assemblies, while the LDMOS linearity is sufficient for 2-3 carrier LTE signals up to 20 MHz total bandwidth. This application benefits the most from the part's high gain (driver count reduction) and Doherty-capable power contours.
Recommandé
WiMAX 2.6 GHz Customer-Premises Equipment PA
For fixed WiMAX 2.6 GHz customer-premises equipment (CPE) and outdoor subscriber stations, the MRF7S27130HSR5 supplies the linear output power required for non-line-of-sight OFDMA links with high peak-to-average ratios. The device's class-AB linearity and Doherty capability deliver acceptable EVM at the high PAPR of 64-QAM WiMAX bursts while maintaining reasonable DC power consumption. The NI-780S package and 28 V rail match standard WiMAX CPE thermal designs, and the part's gain flatness over the 2.5-2.7 GHz band simplifies the band-pass filter and matching network. The 16.5 dB gain allows a single final stage in lower-power CPE designs (sub-50 W), eliminating the cost of an additional driver LDMOS.
Recommandé
S-Band 2.7 GHz Pulsed-Radar Driver Amplifier
The MRF7S27130HSR5's 130 W pulsed power and fast thermal time constant suit it for use as a final or driver stage in 2.7 GHz pulsed-radar transmitters and DVB-T driver stages. With sub-100 µs pulse widths and 10-20% duty cycles, the device operates well within its pulsed SOA, and the high gain reduces the number of pre-driver stages required. The 65 V breakdown gives substantial margin against load-VSWR-induced overshoot that is common in radar antennas. Designers using the MRF7S27130HSR5 in radar should observe the datasheet's pulse derating curves and ensure load-pull characterization at the actual operating frequency to avoid overdrive.
Recommandé
Industrial-Scientific-Medical 2.4-2.5 GHz Transmitters
Although centered on 2.7 GHz, the MRF7S27130HSR5 has enough band-edge capability for some 2.4-2.5 GHz ISM-band transmitter applications including industrial heating, scientific particle accelerators, and high-power RF lighting. Its continuous-wave 23 W rating is more than sufficient for many ISM applications, while its 130 W pulsed capability supports higher-power pulsed processes. Designers should note that the part is optimized for 2.5-2.7 GHz and will require matching-network retuning for sub-2.5 GHz operation; efficiency will also drop noticeably below 2.4 GHz. The 28 V supply is convenient for industrial 24 V-bus-driven systems.
Recommandé
DVB-T / DVB-H Transmitter Final Stage
The MRF7S27130HSR5's high gain and class-AB linearity also serve DVB-T / DVB-H UHF-adjacent and S-band transmitter final stages (where 2.5-2.7 GHz repeaters are used). The 16.5 dB gain reduces the linearity burden on preceding driver stages, and the device's high peak-to-average handling matches the PAPR demands of DVB-T 64-QAM carriers. For DVB-T applications, the part should be paired with a digital pre-distortion loop to meet out-of-band emission requirements at the higher PAPR. The NI-780S bolt-down flange and integrated input prematch simplify DVB-T PA module manufacturing.
Recommandé
Defense / Tactical Radio RF Power Stage
Military and tactical-radio applications in the 2.5-2.7 GHz range - such as battlefield networks, electronic-countermeasure jammers, and tactical data links - use the MRF7S27130HSR5 for its high gain and proven reliability in harsh environments. The NI-780S ceramic package meets the operating-temperature and vibration requirements of MIL-spec tactical radio platforms. Engineers should verify the part's specific lot-level screening for defense applications; NXP also offers SMD-prefixed and military-screened variants through its RF defense product line. The part's documented ruggedness into VSWR 10:1 is a major reason it is favored in tactical radio final stages.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF7S27130HSR5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF7S27130HR5 | MRF7S26150HSR5 | MRF7S21150HSR5 | MRF7S18150HSR5 | MRF7S21170HSR5 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S | NI-780S - same | NI-780S - same | NI-780S - same | NI-780S - same | NI-780S - same |
| Operating Frequency | 2.5 - 2.7 GHz | 2.5 - 2.7 GHz | 2.6 GHz band | 2.11 GHz band | 1.8 GHz band | 2.11 GHz band |
| Output Power (Pout) | 130 W (Doherty), 23 W CW | 130 W (Doherty), 23 W CW | 150 W (Doherty) | 150 W (Doherty) | 150 W (Doherty) | 170 W (Doherty) |
| Power Gain | 16.5 dB | 16.5 dB | 16.0 dB | 17.0 dB | 17.0 dB | 17.0 dB |
| Drain Voltage (VDS) | 28 V (65 V max) | 28 V (65 V max) | 28 V (65 V max) | 28 V (65 V max) | 28 V (65 V max) | 28 V (65 V max) |
| Drain Current (max) | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.7 A |
| Mounting / Cooling | Bolt-down flange, air heatsink | Bolt-down flange, air heatsink | Bolt-down flange, air heatsink | Bolt-down flange, air heatsink | Bolt-down flange, air heatsink | Bolt-down flange, air heatsink |
Principaux différenciateurs
- Higher in-band Doherty-class power density than competing 2.5-2.7 GHz LDMOS (vs MRF7S26150HSR5)
- Common-source single-ended topology with high 16.5 dB gain (vs MRF7S21150HSR5)
- 65 V drain breakdown gives 2.3x margin above the 28 V operating rail (vs MRF7S21170HSR5)
Notes de conception
Estimated: at 100 W CW dissipation into a heatsink with θSA = 0.2 °C/W and case-to-sink θCS = 0.1 °C/W, the junction-to-ambient thermal stack is roughly RθJA ≈ RθJC + RθCS + RθSA ≈ 0.5 + 0.1 + 0.2 = 0.8 °C/W. At 100 W CW the junction rises ~80 °C above ambient; with a 25 °C ambient and 50 °C safety margin this still requires active cooling or a large machined heatsink. Use NXP's recommended mounting torque (typically 0.5 N·m on the M2 screws) to keep θCS low.
Use the NXP reference PCB stackup (typically Rogers RO4350B or RO4003C, εr ≈ 3.55, thickness 0.5 mm) for the matching networks; keep gate and drain traces as 50 Ω microstrip and avoid 90° bends. Place gate bias-decoupling capacitors (100 pF + 10 nF + 1 µF) within 2 mm of the gate lead, and route the DC bias feed on the opposite side of the PCB from the RF trace to prevent spurious feedback. Solder the flange to a continuous ground-pour pad with multiple thermal vias under the flange to reduce θCS.
Do not exceed VDS = 65 V even momentarily - load-VSWR-induced overshoot at the drain can destroy the device. Always operate with a small quiescent current (typically 100-300 mA for class AB) before applying RF drive, to avoid thermal runaway on cold starts. Verify gate bias polarity - the MRF7S27130HSR5 is enhancement-mode N-channel; reversed gate polarity (negative voltage when positive is expected) will prevent conduction but a large negative spike can damage the gate oxide.
For Doherty operation, the amplifier's peak and carrier paths must be phase-aligned within ±5° at the carrier frequency; mismatched lengths of microstrip in the splitter or combiner can severely degrade efficiency and linearity. Use NXP's recommended load-pull target impedances for the 2.7 GHz band as the starting point, then trim the output matching network empirically. Watch out for instability when driving the part at high gain into a non-50 Ω load - the device's high gain (16.5 dB) can oscillate if source impedance is poorly controlled.
Informations de conformité
RoHS and REACH compliant per NXP product page. Not AEC-Q100 qualified (telecom/ISM part, not automotive). Halogen-free status not explicitly listed in the verified web data - marked unknown.
