MT40A1G8WE-083E - 8Gb DDR4 SDRAM 2400 | Micron Technology
Référence : MT40A1G8WE-083E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.48 | $5,48 |
| 10 | $5.15 | $51,50 |
| 100 | $4.72 | $472,00 |
| 500 | $4.35 | $2 175,00 |
| 1 000 | $3.98 | $3 980,00 |
MT40A1G8WE-083E Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR memory, sitting in the system hierarchy as main-memory DRAM beneath the processor cache. It transfers data on both clock edges, doubling effective bandwidth versus SDR memory, and organizes storage into multiple internal banks that can be activated, read, and precharged in interleaved fashion to sustain high throughput.
Key features include 16 internal banks in 4 groups of 4 (x8 configuration), an 8n-bit prefetch architecture, on-die internal adjustable VREFDQ generation, and a 1.2V pseudo open-drain I/O interface. VDD = VDDQ = 1.2V with a tolerance of plus/minus 60mV, while VPP = 2.5V (-125mV, +250mV) supplies the DRAM cell array. Programmable data strobe preambles, data strobe preamble training, and command/address latency (CAL) support robust high-speed signaling.
The part implements temperature-aware refresh: an 8192-cycle refresh at a 64ms interval for -40C to +85C, 32ms above 85C to 95C, and reduced intervals beyond that, preserving data integrity across the full automotive temperature range. The -083E speed grade corresponds to the industry DDR4-2400 bin, delivering 2400 MT/s per data pin, or 19.2 Gb/s aggregate bandwidth on the x8 interface.
Typical applications include automotive ADAS domain controllers, telematics and infotainment units, industrial networking equipment, and test-and-measurement systems where wide-temperature DRAM is required. The WE (wide-temperature) suffix and -IT automotive screening make it suitable for designs targeting AEC-aligned qualification flows.
Design consideration: the 78-ball FBGA requires controlled-impedance fly-by routing on the command/address bus and length-matched data strobe pairs; follow Micron's DDR4 point-to-point layout guidelines and enable write leveling in the memory controller.
This page synthesizes distributor pricing, verified speed-grade alternatives, and design guidance not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MT40A1G8WE-083E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT40A1G8WE-083E AIT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G8WE-083E AAT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G8WE-083E IT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G8WE-083E:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G8WE-083E:G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4A8G085WE-BCRC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G8WE-083E Spécifications
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gbit |
| Organisation de la mémoire | 1 Gb x 8 (x8) |
| Internal Banks | 16 banks (4 groups of 4, x8) |
| Speed Grade | -083E (DDR4-2400) |
| Débit de données | 2400 MT/s |
| Clock Frequency | 1.2 GHz |
| VDD / VDDQ | 1.2 V +/- 60 mV |
| VPP | 2.5 V (-125 mV, +250 mV) |
| I/O Interface | 1.2 V pseudo open-drain |
| Prefetch Architecture | 8n-bit |
| Refresh | 8192-cycle; 64 ms at -40C to +85C; 32 ms at >85C to 95C |
| Température de fonctionnement | -40C to +95C |
| Boîtier | 78-ball FBGA (8 x 12 mm) |
| Type de montage | Surface Mount |
| VREFDQ | On-die internal adjustable generation |
| Caractéristiques | Programmable data strobe preambles, DQS preamble training, command/address latency (CAL) |
| Grade | Automotive / Industrial (IT, wide temperature WE) |
Guide de configuration des broches du MT40A1G8WE-083E 78-ball fbga (8 x 12 mm)
Configuration des broches du MT40A1G8WE-083E (boîtier 78-ball fbga (8 x 12 mm)). La numérotation des broches, les fonctions et les schémas de connexion sont définis dans la fiche technique du fabricant. Consultez-la pour l'empreinte exacte et les directives de soudage.
Aucune donnée de brochage détaillée disponible pour MT40A1G8WE-083E.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT40A1G8WE-083E convient pour 6 applications: Automotive ADAS Domain Controllers, Automotive Infotainment and Cluster, Telematics Control Units (TCU), Industrial Networking and PLC, Test and Measurement Instruments, Edge AI Inference Modules.
Automotive ADAS Domain Controllers
ADAS domain controllers fuse camera, radar, and lidar streams and need main memory with guaranteed wide-temperature behavior. The MT40A1G8WE-083E fits because its -40C to +95C range and WE designation cover under-hood and enclosed-controller thermal profiles, while the DDR4-2400 (2400 MT/s) x8 interface supplies 19.2 Gb/s per device for sensor-frame buffering. In a typical design, one to four devices attach to the ADAS SoC's DDR4 controller in point-to-point fly-by topology with ODT tuning; the on-die adjustable VREFDQ simplifies the reference network. The temperature-dependent refresh (64ms below +85C, 32ms above) maintains retention without controller intervention, and the AIT screening option satisfies automotive quality flows.
Recommandé
Automotive Infotainment and Cluster
Digital cockpits and instrument clusters run graphically rich operating systems that demand responsive main memory at elevated temperatures from sunlight-loaded dashboards. The MT40A1G8WE-083E's 8Gb density accommodates frame buffers and OS working sets, and its 16-bank, 8n-bit prefetch architecture sustains the mixed random/sequential traffic typical of GPU-accelerated UIs. The 1.2V VDD/VDDQ rail cuts dynamic power versus DDR3, reducing heat inside sealed cluster housings. Designers typically pair two or four devices on a 32-bit or 64-bit DDR4 channel; the programmable DQS preamble and command/address latency features ease timing closure on long PCB runs. Wide-temperature screening prevents the retention degradation seen in commercial-grade DRAM above +85C.
Recommandé
Telematics Control Units (TCU)
Telematics control units manage cellular connectivity, GNSS positioning, and secure OTA-update staging, operating in engine-bay-adjacent temperatures. The MT40A1G8WE-083E suits this role with its -40C to +95C rating, 8Gb capacity for dual-bank OTA staging, and low 1.2V I/O swing that contains EMI in RF-sensitive layouts. Its DDR4-2400 bandwidth handles LTE/5G modem packet buffering concurrently with application code. Because TCUs experience frequent thermal cycling, the die-level wide-temperature qualification and adaptive refresh are essential to data integrity across the vehicle life. Typically a single x8 device hangs on the TCU SoC with VPP fed from a dedicated 2.5V LDO, and the AIT grade supports the customer's automotive quality documentation package.
Recommandé
Industrial Networking and PLC
Industrial switches, PLCs, and edge gateways run from 24V cabinets where ambient temperatures reach +85C to +95C near heat sources. The MT40A1G8WE-083E provides 8Gb of main memory with a guaranteed wide-temperature envelope, 2400 MT/s throughput for packet buffering and protocol stacks, and 16 internal banks that sustain the bank-interleaved access patterns of TCP/IP offload engines. The 1.2V core power also lowers cabinet cooling budgets compared to DDR3L designs. Engineers value that the same footprint supports IT and AIT screening, letting one PCB layout serve both industrial and automotive product lines. On-die VREFDQ removes an external precision divider, reducing BOM tolerance risk in long-lifetime industrial builds.
Recommandé
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with deterministic bandwidth. The MT40A1G8WE-083E contributes 8Gb per device, and multiple devices ganged across 64-bit DDR4 channels deliver the sustained streaming rates needed to move ADC samples from acquisition front ends into memory. The DDR4-2400 speed grade with programmable strobe preambles and write-leveling support simplifies controller calibration across a wide instrument temperature range (-40C to +95C), including benchtop units placed near heat-dissipating acquisition boards. The pseudo open-drain 1.2V I/O reduces simultaneous-switching noise, protecting analog front-end accuracy. Wide-temperature qualification also extends chamber-test capability of the instrument itself.
Recommandé
Edge AI Inference Modules
Edge AI accelerator modules and smart cameras run convolutional inference on streaming video, needing both bandwidth and temperature margin in sealed outdoor housings. The MT40A1G8WE-083E offers 19.2 Gb/s of x8 bandwidth at DDR4-2400 with 8Gb capacity for activation buffers and model workloads, and its -40C to +95C range survives solar-heated enclosures. The 16-bank structure lets the SoC overlap weight-fetch and feature-map traffic, sustaining near-peak effective bandwidth with proper bank interleaving. The 1.2V rail aligns with modern edge-SoC power trees, and the on-die VREFDQ eases multi-device routing. AIT screening options allow the same BOM to serve both industrial and automotive-deployed AI modules.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT40A1G8WE-083E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT40A1G8WE-083E AIT:B | MT40A1G8WE-083E AAT:B | MT40A1G8WE-083E IT:B | K4A8G085WE-BCRC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA (8 x 12 mm) | 78-ball FBGA (8 x 12 mm) - same | 78-ball FBGA (8 x 12 mm) - same | 78-ball FBGA (8 x 12 mm) - same | 78-ball FBGA - same footprint class, verify ball map |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Density / Organization | 8Gb, 1Gb x 8 | 8Gb, 1Gb x 8 | 8Gb, 1Gb x 8 | 8Gb, 1Gb x 8 | 8Gb, 1Gb x 8 |
| Speed Grade | DDR4-2400 (-083E) | DDR4-2400 (-083E) | DDR4-2400 (-083E) | DDR4-2400 (-083E) | DDR4-2400-class |
| Screening / Grade | Automotive/Industrial (WE, -IT) | Automotive (AIT) | Automotive (AAT) | Industrial (IT) | Automotive grade (BC series) |
| VDD / VDDQ / VPP | 1.2V / 1.2V / 2.5V | 1.2V / 1.2V / 2.5V | 1.2V / 1.2V / 2.5V | 1.2V / 1.2V / 2.5V | 1.2V / 1.2V / 2.5V (DDR4 standard) |
Principaux différenciateurs
- Wide-temperature automotive envelope (vs MT40A1G8PM-083E:A)
- Automotive screening tier available in the same footprint (vs MT40A1G8WE-083E IT:B)
- On-die adjustable VREFDQ generation (vs K4A8G085WE-BCRC)
Notes de conception
Route the DDR4 command/address bus in fly-by topology with on-die termination (ODT) enabled, and length-match each DQS_t/DQS_c strobe pair to its byte lane within the tolerance stated in Micron's DDR4 point-to-point design guide. The 78-ball FBGA places VREFDQ generation on-die, so no external divider is needed, but keep the region under the package a solid ground plane. Use per-ball 0402 decoupling plus bulk capacitance on VDD, VDDQ, and the 2.5V VPP rail; VPP is DC-only but must stay within -125mV/+250mV of 2.5V at all times, including power-up sequencing.
Supply three rails: VDD = 1.2V +/- 60mV, VDDQ = 1.2V +/- 60mV (filter VDDQ separately from VDD to isolate I/O switching noise from the core), and VPP = 2.5V. Estimated: a single x8 device at DDR4-2400 with 30% row-active duty draws roughly 300-500 mA from VDDQ (input values: 2400 MT/s, 8 DQ, pseudo open-drain termination), so size the PMIC per device count plus 30% margin. Micron's power calculators (TN-40-07 family documentation) provide exact ICC figures per speed bin - use them before finalizing the regulator budget.
Do not run the -083E grade above 2400 MT/s - it is not characterized for DDR4-2666. Observe refresh scaling: the 8192-cycle refresh is 64ms only up to +85C; above +85C to +95C it is 32ms, and the controller must configure tREFI accordingly or data will be lost. Also respect power-up initialization: VPP must ramp before or with VDD/VDDQ, and the full mode-register initialization sequence must complete before the first refresh command. Qualifying a cross-brand swap requires verifying the ball map, power-up sequence, and MR defaults against the vendor datasheet - they are not guaranteed identical across vendors.
Informations de conformité
Current-production Micron DDR4 SDRAM is offered in lead-free, RoHS-compliant options per distributor listings (DigiKey, Mouser). AEC-Q100 applicability and REACH status should be confirmed on the Micron part detail page compliance certificate for the exact suffix; the WE/AIT designation indicates automotive-class screening rather than a published AEC-Q100 certificate in the retrieved data.
