MT41K1G8RKB-107:P - 8Gb DDR3L SDRAM 1Gx8 933MHz | Micron
Référence : MT41K1G8RKB-107:P ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $16.2 | $162,00 |
| 100 | $13.4 | $1 340,00 |
| 500 | $11.85 | $5 925,00 |
| 1 000 | $10.5 | $10 500,00 |
MT41K1G8RKB-107:P Présentation
DDR3L SDRAM (Double Data Rate 3 Low-Voltage Synchronous DRAM) is a generation of synchronous DRAM that transfers data on both clock edges while operating from a reduced 1.35 V VDD/VDDQ supply (1.283 V to 1.45 V tolerant), cutting dynamic power roughly 20% versus the original 1.5 V DDR3. The 8 Gbit density sits in the middle of the DDR3L capacity ladder, sitting between mainstream 4 Gbit parts and the top-tier 16 Gbit densities; SDRAM is the broadest hypernym (volatile main memory -> DRAM -> SDRAM -> DDR3 -> DDR3L -> this 8 Gbit x 8 organization).
Key features include support for CAS latencies from CL5 up to CL13, on-die termination (ODT) for clean signal integrity, auto-precharge, auto/self-refresh, an asynchronous reset pin for in-system reset, data masking for partial-word writes, and a 1.5 V tolerant input design (the 'L' suffix indicates low-voltage operation). The 78-ball FBGA, with its 8 mm x 10.5 mm outline and 0.8 mm ball pitch, matches the JEDEC-standard 78-ball DDR3L x8 footprint used across nearly every modern compute SoC reference design.
The TwinDie topology places two 4 Gbit die within a single package so the controller can address an 8 Gbit, single-rank memory device as one logical entity; this effectively doubles the per-channel memory ceiling of a single-rank design without requiring a second DRAM site on the PCB.
Typical applications include embedded computing platforms, networking line cards, industrial single-board computers, FPGA-based prototyping boards, automotive infotainment compute modules, and point-of-sale terminals. The wide operating range (0 degC to +95 degC case) and industrial-grade moisture sensitivity make it well suited to long-life deployments.
When designing with this device, observe the read/write timing budget and keep the SSTL_15 differential clock trace length matched to within 5 ps to avoid command-address setup margin loss; place VREF decoupling within 100 mil of each VTT island.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MT41K1G8RKB-107:P — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT41K1G8RKB-107:N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K1G8RKB-107:P TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K1G8SN-107:A
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K2G8RFB-107:P
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
HGD38G08M18
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K1G8RKB-107:P Valeurs maximales et caractéristiques électriques
| Density | 8 Gbit |
| Organisation de la mémoire | 1G x 8 |
| Type de mémoire | DDR3L SDRAM (TwinDie) |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns (tCK @ -107) |
| Speed Grade | -107 (DDR3L-1866) |
| Data Width | 8 bit |
| Boîtier | 78-FBGA (8 mm x 10.5 mm, 0.8 mm pitch) |
| Voltage - Supply (VDD/VDDQ) | 1.283 V to 1.45 V (1.35 V typ) |
| Température de fonctionnement | 0 degC to +95 degC |
| Interface | Parallel / SSTL_15 |
| On-Die Termination (ODT) | Yes, dynamic |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask Function | Yes |
| Niveau MSL | 3 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant |
Guide de configuration des broches du MT41K1G8RKB-107:P 78-fbga (8 mm x 10.5 mm, 0.8 mm pitch)
Configuration des broches du MT41K1G8RKB-107:P (boîtier 78-fbga (8 mm x 10.5 mm, 0.8 mm pitch)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT41K1G8RKB-107:P.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT41K1G8RKB-107:P convient pour 6 applications: Embedded Computing Single-Board Computers, Networking Line Cards and Switching Fabrics, Industrial PC and IoT Gateways, Automotive Infotainment Compute Modules, FPGA-Based Prototyping Boards, Point-of-Sale and Retail Terminals.
Embedded Computing Single-Board Computers
The MT41K1G8RKB-107:P fits embedded SBC memory downlinks by delivering 8 Gbit per chip in the standard 78-FBGA x8 footprint that matches most ARM SoC reference designs. With a 933 MHz DDR3L-1866 data rate, single-rank TwinDie density and a 1.35 V typical supply, the part lets a single DRAM site reach 1 GB on the x8 channel without resorting to dual-rank layout. Its asynchronous reset pin eases PMC firmware reboot sequences and the on-die termination keeps signal integrity inside the small 8 mm x 10.5 mm BGA escape feasible on 4-layer FR4.
Recommandé
Networking Line Cards and Switching Fabrics
The MT41K1G8RKB-107:P serves as the local packet-buffer memory on 1U/2U switching line cards where each 8 Gbit device provides 1 GB of low-latency DDR3L in a single x8 channel. Its 20 ns tCK at -107 timing and dynamic ODT support the tight read/write turn-around budgets that line-card NPUs such as the BCM series demand. The 0 to 95 degC operating window tolerates closed-chassis chassis thermals where front-to-back airflow keeps the BGA case within spec, and the 78-FBGA industrial outline lets designers share the same PCB across 8G and 16G BOM variants.
Recommandé
Industrial PC and IoT Gateways
In industrial PCs and ruggedized IoT gateways, the MT41K1G8RKB-107:P provides 1 GB per channel of DDR3L storage with asynchronous reset support so a watchdog timer can reinitialize the DRAM without a full power cycle, which is critical for remote, hard-to-service installations. The 1.283 V to 1.45 V supply range tracks common POL converter outputs derived from 12 V or 24 V industrial buses, while dynamic ODT and write leveling on the part simplify the controller PHY bring-up on multi-layer boards. The 78-FBGA footprint also helps qualify the same layout for automotive infotainment variants in mixed-market OEMs.
Recommandé
Automotive Infotainment Compute Modules
The MT41K1G8RKB-107:P populates DDR3L channels on automotive infotainment compute modules where 1 GB of x8 memory per rank keeps the SoC comfortable for operating-system, navigation map, and rear-seat display buffers. The 1.35 V typical supply allows the AEC-Q100 PMIC to power both DRAM rails and SoC core in parallel, reducing bill-of-materials cost, while the asynchronous reset pin matches the watchdog reset scheme used by most automotive SoCs. Designers can keep the layout unchanged when scaling to the 16 Gbit MT41K2G8RFB-107:P density upgrade on shared DDR3L-1866 platforms.
Recommandé
FPGA-Based Prototyping Boards
FPGA prototyping kits that pair a high-logic-count device with DDR3L SODIMM or onboard memory often include the MT41K1G8RKB-107:P as the on-board 1 GB x8 reference DRAM. The 933 MHz DDR3L-1866 rate lets the FPGA PHY run at 933 MHz with 20 ns tCK, which is the native performance bin for most soft memory controllers generated with Xilinx MIG or Intel EMIF. Auto-precharge and the flexible CAS-latency range from CL5 to CL13 give FPGA firmware engineers the ability to switch controllers between performance and power-optimized builds without changing the BGA footprint on the carrier card.
Recommandé
Point-of-Sale and Retail Terminals
POS and retail terminals benefit from the MT41K1G8RKB-107:P's single-rank 8 Gbit density and 1.35 V supply, providing 1 GB of system memory for Linux, Windows IoT, or Android-based POS software in a compact 78-FBGA footprint. The asynchronous reset pin supports the security-wipe sequence many payment-card terminals must execute on tamper events, and on-die termination simplifies the controller bring-up for cost-optimized retail SoCs that omit external VTT termination. The same PCB supports a drop-in upgrade to the 16 Gbit MT41K2G8RFB-107:P when higher-resolution menu graphics and inventory databases demand more DRAM.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT41K1G8RKB-107:P — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT41K1G8RKB-107:N | MT41K1G8RKB-107:P TR | MT41K1G8SN-107:A | MT41K2G8RFB-107:P | HGD38G08M18 |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | HGCHIPS |
| Package | 78-FBGA (8x10.5 mm) | 78-FBGA (8x10.5 mm) - same | 78-FBGA (8x10.5 mm) - same | 78-FBGA (8x10.5 mm) - same | 78-FBGA (8x10.5 mm) - same | 78-FBGA (8x10.5 mm) - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 16 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 2G x 8 | 1G x 8 |
| Speed Grade | -107 (DDR3L-1866) | -107 (DDR3L-1866) | -107 (DDR3L-1866) | -107 (DDR3L-1866) | -107 (DDR3L-1866) | -107 (DDR3L-1866) |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) |
| Asynchronous Reset | Yes | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- TwinDie 8 Gbit density in a single 78-FBGA footprint (vs MT41K1G4RG-107:N)
- 1.35 V DDR3L low-voltage operation (vs MT41K1G8SN-107:A (industrial S-grades))
- Micron second-sourceable pin-compatible replacement (vs HGD38G08M18 (HGCHIPS))
Notes de conception
DDR3L TwinDie parts require the controller PHY to enable write-leveling and ZQ calibration at power-up. Skipping ZQ calibration causes the on-die termination resistors to drift across temperature, which manifests as intermittent data corruption on byte lanes. Per Micron design guide, run ZQ calibration at least once every 10 ms and after each self-refresh exit.
Match the SSTL_15 byte-lane traces within each DQ nibble to within 5 ps and route the differential CK/CK# pair on the same layer with length matching enforced to within 25 mil. VREFCA and VREFDQ must each be decoupled with a 0.1 uF X7R cap placed within 100 mil of the FBGA ball to keep the comparator threshold stable during write bursts.
At an ambient of 70 degC inside a sealed enclosure, an 8 Gbit TwinDie reads/writes loop typically dissipates 400 to 700 mW. Estimated: at 0.6 W into the 78-FBGA theta_JA of approximately 55 C/W on a 2-layer JEDEC test board, the junction-to-ambient rise is about 33 degC, leaving comfortable margin under the 95 degC case limit; using a 4-layer board drops theta_JA to about 25 C/W. Provide 1 oz copper fill on both top and bottom layers under the BGA.
Informations de conformité
RoHS compliant per Micron product page and DigiKey listing. Not AEC-Q100 qualified (industrial commercial grade); use an automotive-qualified Micron DDR3L variant for vehicular applications. Halogen-free status not explicitly listed in the provided verified data; flagged as 'unknown' per Data Authenticity Rule 2.
