MT41K64M16TW-107 AAT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
Référence : MT41K64M16TW-107 AAT-J ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.2 | $22,00 |
| 100 | $1.95 | $195,00 |
| 500 | $1.72 | $860,00 |
| 1 000 | $1.58 | $1 580,00 |
MT41K64M16TW-107 AAT-J Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a synchronous dynamic random-access memory that transfers data on both clock edges, doubling effective bandwidth relative to SDR DRAM. Within the memory hierarchy, DRAM sits between CPU caches and storage, serving as main system memory or frame-buffer memory in processors, SoCs, FPGAs, and multimedia platforms.
Key features include the wide 64M x 16 organization that simplifies 16-bit memory buses, the 1.35 V low-voltage core that cuts dynamic power versus 1.5 V DDR3, a 933 MHz clock rate delivering up to 1866 MT/s of data rate, and the compact 96-FBGA (8x14) ball-grid package suited to dense multilayer PCBs. The 'A' grade prefix and 'AAT' temperature suffix denote automotive qualification for extended environmental stress.
Architecturally, the device uses an 8-internal-bank DDR3L core with standard burst-length-8 operation, on-die termination (ODT), and JEDEC-standard DDR3L command interface, allowing use with mainstream memory controllers from Texas Instruments, NXP, Xilinx/AMD, and STMicroelectronics.
Typical applications include automotive infotainment and instrument clusters, industrial programmable-logic and vision systems, and networking line-card buffer memory where AEC-Q100 qualification is mandatory.
Design consideration: DDR3L signal integrity requires length-matched, impedance-controlled routing (40-60 ohm traces), VTT termination, and careful fly-by address routing per Micron's DDR3 system design guidance.
This page synthesizes distributor pricing, drop-in same-footprint alternatives, and practical DDR3L layout notes not found on the manufacturer product page.
Alternatives de remplacement direct pour MT41K64M16TW-107 AAT-J — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT41K64M16TW-107 IT:J
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K64M16TW-107 AIT:J
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K64M16TW-107:J
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K128M16TW-107 AIT:J
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MT41K32M16TW-107 AIT:J
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MT41K64M16TW-107 AAT-J Spécifications
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 1 Gbit |
| Organisation de la mémoire | 64M x 16 |
| Interface | Parallel |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Tension d'alimentation | 1.35 V |
| Boîtier | 96-FBGA (8x14 mm) |
| Type de montage | Surface Mount |
| Qualification | Automotive, AEC-Q100 |
| Number of Internal Banks | 8 |
| Marking Code | D9SGH |
| Débit de données | 1866 MT/s |
| Package Dimensions Section | Per Micron datasheet (1Gb x8/x16 Automotive DDR3L SDRAM) |
Guide de configuration des broches du MT41K64M16TW-107 AAT-J per micron datasheet (1gb x8/x16 automotive ddr3l sdram)
Configuration des broches du MT41K64M16TW-107 AAT-J (boîtier per micron datasheet (1gb x8/x16 automotive ddr3l sdram)). La numérotation des broches, les fonctions et les schémas de connexion sont définis dans la fiche technique du fabricant. Consultez-la pour l'empreinte exacte et les directives de soudage.
Aucune donnée de brochage détaillée disponible pour MT41K64M16TW-107 AAT-J.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT41K64M16TW-107 AAT-J convient pour 6 applications: Automotive Infotainment, Instrument Cluster and Display, Industrial Vision and Machine Vision, Networking Buffer Memory, Embedded FPGA Processing Platforms, Telematics and ADAS Sensor Hubs.
Automotive Infotainment
The MT41K64M16TW-107 AAT:J provides AEC-Q100-qualified main memory for automotive infotainment head units and displays, where its 1.35 V operation reduces DRAM power in thermally constrained dash installations. Its 1866 MT/s data rate on a 16-bit bus delivers 3.7 GB/s peak bandwidth, sufficient for navigation rendering, audio streaming, and reverse-camera overlays in mid-tier SoCs. Placed on a fly-by-routed DDR3L bus with on-die termination, it maintains margins across the automotive temperature range. The automotive qualification paperwork simplifies compliance for tier-1 platforms.
Recommandé
Instrument Cluster and Display
Digital instrument clusters require frame-buffer memory with proven automotive reliability. The 64M x 16 organization of the MT41K64M16TW-107 AAT:J matches the x16 memory controllers of common cluster SoCs, and the 96-FBGA (8x14) package fits within the tight board space behind cluster displays. Its 20 ns access time and 933 MHz clock support the sustained write bandwidth needed for 60 fps graphics updates. AEC-Q100 qualification covers the extended temperature and vibration environment of the cockpit, while DDR3L's 1.35 V rail integrates with standard PMIC buck outputs.
Recommandé
Industrial Vision and Machine Vision
Industrial machine-vision cameras use DDR3L as line-buffer and frame-buffer memory between image sensors and processing blocks. The MT41K64M16TW-107 AAT:J's 1 Gbit density stores multiple high-resolution frames, and the 64M x 16 organization provides the wide data path FPGA image pipelines prefer. At 933 MHz, burst-8 transfers sustain sensor-dump bandwidth with headroom for concurrent processing. The automotive screening exceeds typical industrial temperature requirements, providing extra margin in factory environments with elevated ambient temperatures near lighting and processing electronics.
Recommandé
Networking Buffer Memory
Switches, routers, and gateways use DDR3L SDRAM for packet buffering, flow tables, and management-CPU memory. The MT41K64M16TW-107 AAT:J's 1866 MT/s data rate and 8-bank architecture enable interleaved accesses that keep line-rate pipelines fed, while the x16 organization reduces bus width requirements on compact networking SoCs. Its AEC-Q100 pedigree adds reliability screening useful in extended-temperature outdoor telecom enclosures. The 1.35 V operation helps meet the strict thermal budgets of fanless network appliances where every watt of DRAM power matters.
Recommandé
Embedded FPGA Processing Platforms
Zynq-class and soft-core FPGA platforms use x16 DDR3L SDRAM as processing-system main memory. The MT41K64M16TW-107 AAT:J connects directly to hardened DDR3L memory controllers in mainstream Xilinx/AMD and Microchip PolarFire-class devices, using the JEDEC-standard command interface, on-die termination, and burst-length-8 protocol. Its 933 MHz speed grade matches common controller maximums, and the automotive qualification suits industrial and transportation FPGA deployments. The 96-FBGA footprint supports short, length-matched trace routing on 6-8 layer boards for reliable SI margins.
Recommandé
Telematics and ADAS Sensor Hubs
Telematics control units and ADAS sensor hubs demand memory with automotive qualification and predictable latency for sensor fusion workloads. The MT41K64M16TW-107 AAT:J's 1 Gbit capacity handles radar/lidar point-cloud staging and GPS log buffering, while the 64M x 16 bus keeps memory controller pin count low on compact hub SoCs. AEC-Q100 screening addresses the harsh under-hood and mirror-mount thermal environments. DDR3L's 1.35 V core rail integrates cleanly with automotive PMICs, and the marking code D9SGH aids incoming-inspection traceability for tier-1 production lines.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT41K64M16TW-107 AAT-J — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT41K64M16TW-107 IT:J | MT41K64M16TW-107 AIT:J | MT41K64M16TW-107:J | MT41K128M16TW-107 AIT:J |
|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 2 Gbit |
| Organization | 64M x 16 | 64M x 16 | 64M x 16 | 64M x 16 | 128M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Qualification | Automotive AEC-Q100 (AAT) | Industrial (IT) | Automotive extended (AIT) | Standard grade | Automotive extended (AIT) |
Principaux différenciateurs
- AEC-Q100 automotive qualification at standard automotive temperature (vs MT41K64M16TW-107 IT:J)
- Extended-temperature automotive margin available in same footprint (vs MT41K64M16TW-107 AIT:J)
- Cost-optimized 1 Gbit density (vs MT41K128M16TW-107 AIT:J)
Notes de conception
DDR3L at 933 MHz requires controlled-impedance routing: keep DQ/DQS/DM traces at 40-60 ohm single-ended, match DQ to DQS skew within controller guidelines, and route address/command in fly-by topology with series termination to VTT. Use a solid unbroken reference plane under all DDR nets on a minimum 6-layer stackup. Micron's DDR3 system design guides and IBIS models (available from the product page) should drive the SI simulation before layout release.
The 1.35 V VDD rail must be decoupled with a distributed network of ceramic capacitors placed across the FBGA ball field per Micron's layout recommendation, plus a VTT termination rail sourced from a dedicated VTT termination regulator with sensing at the midpoint of the termination network. Budget VTT current as roughly half the simultaneous-switching DQ current - an estimated figure that depends on bus loading and should be confirmed with controller vendor power calculators. Never share VTT with the core 1.35 V plane.
Do not substitute the AAT:J with the standard -107:J in automotive programs without updating qualification documentation - the grades differ in screening even though silicon is identical. Also confirm ball-map compatibility before swapping in density variants (MT41K128M16/MT41K32M16): ball positions are consistent within the Micron x16 TW family, but controller address-space configuration and DQS ball locations for x8 variants are different. Always re-verify the exact ordering code suffix (AAT:J vs AIT:J) on incoming reels via marking D9SGH traceability.
Informations de conformité
Automotive AEC-Q100 qualification confirmed via Arrow and Jotrin listings. RoHS/REACH/lead-free status must be verified per ordering code on the Micron part-detail page.
