MT48LC4M32B2P-6:G - 128Mb x32 SDRAM, 167MHz, 86-TSOP II | Micron
Référence : MT48LC4M32B2P-6:G ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.92 | $5,92 |
| 10 | $5.45 | $54,50 |
| 100 | $4.88 | $488,00 |
| 500 | $4.35 | $2 175,00 |
| 1 000 | $3.85 | $3 850,00 |
MT48LC4M32B2P-6:G Présentation
An SDRAM (Synchronous Dynamic Random Access Memory) is a volatile memory that synchronizes all address, data, and control signals to a master clock, allowing burst-oriented transfers at one word per clock cycle. SDRAM sits in the broader hierarchy: dynamic RAM -> volatile memory -> DRAM IC -> memory IC -> semiconductor. Compared with asynchronous DRAM, SDRAM enables higher throughput by overlapping bank precharge with row activation, hiding precharge cycles behind active accesses.
Key features of the MT48LC4M32B2P-6:G include LVTTL-compatible inputs and outputs, programmable CAS latency of 1, 2, or 3 clocks, burst length options of 1, 2, 4, 8, or full page, and sequential or interleaved burst type. The device supports auto precharge and auto refresh, with a 64 ms refresh window distributed across 4096 refresh cycles. An internal pipelined architecture achieves the 2n-prefetch operation while allowing the column address to change on every clock cycle for fully random access.
Typical applications include networking line cards, set-top box buffers, industrial control mainboards, mid-range graphics frame buffers, and embedded systems requiring high-density synchronous memory. The x32 organization reduces address-line count for wide data buses and pairs naturally with 32-bit processors and ASICs.
When designing with this SDRAM, ensure VDDQ decoupling uses 0.1 µF plus 10 µF bulk capacitors placed close to the supply pins, maintain proper trace impedance for clock and DQ lines, and verify tRCD/tRP timing budgets at the chosen CAS latency. The -6 speed grade corresponds to a 167 MHz clock (6 ns clock period).
This page synthesizes distributor pricing from DigiKey, drop-in alternatives from the Micron SDRAM family and cross-brand equivalents, and practical design notes not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MT48LC4M32B2P-6:G — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT48LC4M32B2P-7:G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT48LC4M32B2P-5:G
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MT48LC4M32B2P-6A:L
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT48LC4M32B2P-75:G
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4S643232F-UC60
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
HY57V643220DT-6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT48LC4M32B2P-6:G Valeurs maximales et caractéristiques électriques
| Type de mémoire | SDRAM (Synchronous DRAM) |
| Taille de mémoire | 128 Mbit (4 Meg x 32) |
| Organisation de la mémoire | 1M x 32 x 4 Banks |
| Fréquence d'horloge maximale | 167 MHz |
| Access Time | 5.5 ns |
| Type d'interface | Parallel |
| Supply Voltage (VDD/VDDQ) | 3.0 V to 3.6 V (3.3 V ±0.3 V) |
| Latence CAS | Programmable: 1, 2, or 3 |
| Burst Length | 1, 2, 4, 8, or Full Page |
| Burst Type | Sequential or Interleaved |
| Refresh | 4096 cycles / 64 ms |
| Température de fonctionnement | 0C to +70C (commercial, G suffix) |
| Boîtier / Format | 86-TSOP II |
| Type de montage | Surface Mount |
| Input / Output Compatibility | LVTTL |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de MT48LC4M32B2P-6:G
| Broche 1 | VDDQ — DQ power supply (3.3V) |
| Broche 2 | DQ0 — Data I/O bit 0 |
| Broche 3 | DQ1 — Data I/O bit 1 |
| Broche 4 | DQ2 — Data I/O bit 2 |
| Broche 5 | DQ3 — Data I/O bit 3 |
| Broche 6 | VDD — Power supply (3.3V) |
| Broche 7 | DQ4 — Data I/O bit 4 |
| Broche 8 | DQ5 — Data I/O bit 5 |
| Broche 9 | DQ6 — Data I/O bit 6 |
| Broche 10 | DQ7 — Data I/O bit 7 |
| Broche 11 | DQ8 — Data I/O bit 8 |
| Broche 12 | VSSQ — DQ ground |
| Broche 13 | DQ9 — Data I/O bit 9 |
| Broche 14 | DQ10 — Data I/O bit 10 |
| Broche 15 | DQ11 — Data I/O bit 11 |
| Broche 16 | DQ12 — Data I/O bit 12 |
| Broche 17 | DQ13 — Data I/O bit 13 |
| Broche 18 | VSS — Ground |
| Broche 19 | DQ14 — Data I/O bit 14 |
| Broche 20 | DQ15 — Data I/O bit 15 |
| Broche 21 | DQ16 — Data I/O bit 16 |
| Broche 22 | DQ17 — Data I/O bit 17 |
| Broche 23 | DQ18 — Data I/O bit 18 |
| Broche 24 | DQ19 — Data I/O bit 19 |
| Broche 25 | DQ20 — Data I/O bit 20 |
| Broche 26 | VDDQ — DQ power supply (3.3V) |
| Broche 27 | DQ21 — Data I/O bit 21 |
| Broche 28 | DQ22 — Data I/O bit 22 |
| Broche 29 | DQ23 — Data I/O bit 23 |
| Broche 30 | DQ24 — Data I/O bit 24 |
| Broche 31 | DQ25 — Data I/O bit 25 |
| Broche 32 | VSSQ — DQ ground |
| Broche 33 | DQ26 — Data I/O bit 26 |
| Broche 34 | DQ27 — Data I/O bit 27 |
| Broche 35 | DQ28 — Data I/O bit 28 |
| Broche 36 | DQ29 — Data I/O bit 29 |
| Broche 37 | DQ30 — Data I/O bit 30 |
| Broche 38 | DQ31 — Data I/O bit 31 |
| Broche 39 | VSS — Ground |
| Broche 40 | NC — Not connected (per datasheet) |
| Broche 41 | NC — Not connected (per datasheet) |
| Broche 42 | NC — Not connected (per datasheet) |
| Broche 43 | NC — Not connected (per datasheet) |
| Broche 44 | NC — Not connected (per datasheet) |
| Broche 45 | NC — Not connected (per datasheet) |
| Broche 46 | NC — Not connected (per datasheet) |
| Broche 47 | NC — Not connected (per datasheet) |
| Broche 48 | NC — Not connected (per datasheet) |
| Broche 49 | NC — Not connected (per datasheet) |
| Broche 50 | NC — Not connected (per datasheet) |
| Broche 51 | NC — Not connected (per datasheet) |
| Broche 52 | NC — Not connected (per datasheet) |
| Broche 53 | NC — Not connected (per datasheet) |
| Broche 54 | NC — Not connected (per datasheet) |
| Broche 55 | NC — Not connected (per datasheet) |
| Broche 56 | NC — Not connected (per datasheet) |
| Broche 57 | NC — Not connected (per datasheet) |
| Broche 58 | NC — Not connected (per datasheet) |
| Broche 59 | NC — Not connected (per datasheet) |
| Broche 60 | NC — Not connected (per datasheet) |
| Broche 61 | NC — Not connected (per datasheet) |
| Broche 62 | NC — Not connected (per datasheet) |
| Broche 63 | WE — Write enable (active low) |
| Broche 64 | CAS — Column address strobe (active low) |
| Broche 65 | RAS — Row address strobe (active low) |
| Broche 66 | CS — Chip select (active low) |
| Broche 67 | BA0 — Bank address 0 |
| Broche 68 | BA1 — Bank address 1 |
| Broche 69 | A10/AP — Address bit 10 / Auto precharge |
| Broche 70 | A0 — Address bit 0 |
| Broche 71 | A1 — Address bit 1 |
| Broche 72 | A2 — Address bit 2 |
| Broche 73 | A3 — Address bit 3 |
| Broche 74 | VDD — Power supply (3.3V) |
| Broche 75 | A4 — Address bit 4 |
| Broche 76 | A5 — Address bit 5 |
| Broche 77 | A6 — Address bit 6 |
| Broche 78 | A7 — Address bit 7 |
| Broche 79 | A8 — Address bit 8 |
| Broche 80 | A9 — Address bit 9 |
| Broche 81 | A11 — Address bit 11 |
| Broche 82 | A12 — Address bit 12 |
| Broche 83 | CKE — Clock enable |
| Broche 84 | CLK — Clock input |
| Broche 85 | DQM — Data mask (active high) |
| Broche 86 | VSS — Ground |
Applications typiques
MT48LC4M32B2P-6:G convient pour 6 applications: Networking Line Card Buffers, Set-Top Box Decoder Memory, Industrial Control Mainboards, Mid-Range Graphics Frame Buffers, Embedded System Main Memory, Legacy Printer and MFP Controllers.
Networking Line Card Buffers
The MT48LC4M32B2P-6:G serves as packet buffer memory on legacy networking line cards and routers. The x32 organization provides 4 M words per bank, allowing full 32-bit packet header and payload alignment with network processors. At 167 MHz the device delivers up to 667 MB/s per chip, sufficient for OC-3/OC-12-class interfaces. SDRAM's synchronous burst access hides precharge latency by overlapping bank operations, and the 4-bank architecture enables concurrent read/write across banks, doubling effective throughput in typical packet-processing workloads where one bank reads while another writes.
Recommandé
Set-Top Box Decoder Memory
The MT48LC4M32B2P-6:G provides the working memory for MPEG-2/H.264 decoder subsystems in set-top boxes. The 128 Mbit capacity holds multiple compressed video frames plus audio buffers, while the 167 MHz synchronous interface keeps pace with compressed bitstream rates of 20-40 Mbps. SDRAM's auto-refresh and self-refresh modes simplify power management during standby, and the LVTTL interface is compatible with the 3.3V I/O rails common in mid-2000s STB ASICs. The 86-TSOP II package's proven thermal profile supports fanless enclosure designs typical of consumer STB hardware.
Recommandé
Industrial Control Mainboards
The MT48LC4M32B2P-6:G is widely deployed on industrial control mainboards (PLCs, HMI panels, motion controllers) that pair 32-bit RISC or ARM processors with external SDRAM. The 128 Mbit x32 organization supports real-time operating system (RTOS) workloads, data logging buffers, and HMI frame buffers without bus contention. SDRAM's deterministic access time at 5.5 ns enables predictable interrupt latency required by IEC 61131-3 PLC programs. The commercial 0C to +70C grade suits factory-floor cabinets with controlled environments; for harsher installations, upgrade to the A:L industrial variant.
Recommandé
Mid-Range Graphics Frame Buffers
The MT48LC4M32B2P-6:G functions as frame buffer memory in mid-range graphics terminals, point-of-sale displays, and embedded LCD controllers. The x32 data bus matches the natural word size of most graphics LCD controllers, enabling single-clock pixel transfers at 167 MHz. 128 Mbit holds approximately 8 MB, sufficient for 1024x768x16-bit color displays with double-buffering for tear-free animation. SDRAM's burst modes (lengths 1, 2, 4, 8) align with horizontal scan-line DMA bursts typical in LCD controllers, and the 4-bank architecture allows simultaneous display refresh and graphics rendering.
Recommandé
Embedded System Main Memory
The MT48LC4M32B2P-6:G serves as the main system memory for embedded computing platforms built around 32-bit processors that lack internal SRAM sufficient for full Linux or Windows CE images. 128 Mbit holds a compressed kernel, root filesystem, and runtime heap. SDRAM's synchronous interface simplifies board design by eliminating the complex timing of asynchronous DRAM, and Micron's standard mode-register programming model is supported by virtually all 32-bit embedded processor toolchains. The 86-TSOP II package's low-profile height suits space-constrained embedded enclosures.
Recommandé
Legacy Printer and MFP Controllers
The MT48LC4M32B2P-6:G provides page buffer memory in legacy laser printers and multifunction peripherals (MFPs). The x32 organization matches the 32-bit bus width of typical printer ASICs, and the 167 MHz synchronous interface keeps pace with 600 DPI laser print engines that require rapid page raster transfers. 128 Mbit holds multiple full-page rasters at standard letter/A4 resolution, supporting simultaneous print-scan-copy workflows. SDRAM's low standby current in self-refresh mode suits energy-star compliance targets, and the proven 86-TSOP II package is supported by long-lifecycle industrial supply chains.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT48LC4M32B2P-6:G — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT48LC4M32B2P-7:G | MT48LC4M32B2P-5:G | MT48LC4M32B2P-6A:L | K4S643232F-UC60 | HY57V643220DT-6 |
|---|---|---|---|---|---|---|
| Package | 86-TSOP II | 86-TSOP II (same) | 86-TSOP II (same) | 86-TSOP II (same) | 86-TSOP II (same) | 86-TSOP II (same) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Density | 128 Mbit | 128 Mbit | 128 Mbit | 128 Mbit | 128 Mbit | 128 Mbit |
| Organization | 4M x 32 (4 banks) | 4M x 32 (4 banks) | 4M x 32 (4 banks) | 4M x 32 (4 banks) | 4M x 32 (4 banks) | 4M x 32 (4 banks) |
| Max Clock Frequency | 167 MHz | 143 MHz (-14%) | 200 MHz (+20%) | 167 MHz (same) | 166 MHz (-1%) | 166 MHz (-1%) |
| CAS Latency | CL=3 | CL=2 | CL=3 | CL=3 | CL=3 | CL=3 |
| Operating Temperature | 0C to +70C | 0C to +70C | 0C to +70C | -40C to +85C (industrial) | 0C to +70C | 0C to +70C |
| Supply Voltage | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V |
| Interface | LVTTL Parallel | LVTTL Parallel | LVTTL Parallel | LVTTL Parallel | LVTTL Parallel | LVTTL Parallel |
Principaux différenciateurs
- Higher peak bandwidth than -7:G speed grade (vs MT48LC4M32B2P-7:G)
- Commercial temperature range vs industrial -6A:L (vs MT48LC4M32B2P-6A:L)
- Micron brand pedigree with broad second-source availability (vs K4S643232F-UC60 (Samsung))
- Higher density than older 64Mb SDRAMs at same package (vs [DATA_NEEDED: older 64Mb x32 SDRAM alternatives])
Notes de conception
Decouple VDD and VDDQ with 0.1 µF ceramic capacitors placed within 5 mm of each supply pin, plus 10 µF bulk capacitors near the device. Per Micron reference designs, VDD and VDDQ should be tied to the same 3.3V rail with separate low-impedance planes. Add a ferrite bead between VDD and VDDQ if the SDRAM shares a rail with noisy digital logic. Bulk capacitance value may need to increase to 22 µF or more for read/write-heavy workloads where supply current peaks exceed 100 mA.
Route CLK as a 50 Ω controlled-impedance trace with series termination at the driver end to prevent reflections that violate setup/hold at 167 MHz. Keep DQ traces matched in length to within ±50 mils to avoid skew-induced timing violations. Per Micron SDRAM layout guidelines, separate VSS and VSSQ planes with a single-point connection at the SDRAM's ground pin to reduce simultaneous switching noise (SSN) on the data bus. Avoid routing DQ signals adjacent to clock or strobe traces to minimize crosstalk.
After power-up, the MT48LC4M32B2P-6:G requires a 100 µs minimum stable clock period before applying any command except DESELECT or NOP. The mode register must be programmed to set CAS latency, burst length, and burst type before issuing the first ACTIVATE command. Failing to precharge all banks before entering self-refresh causes data corruption on exit. Refresh must occur every 64 ms (4096 cycles); bursts of REF commands can interrupt normal operation but require all banks idle first.
At 167 MHz operation, signal integrity margins on the CLK, CKE, and control signals (CS, RAS, CAS, WE) must be verified with oscilloscope measurements at the SDRAM pins, not at the controller. Estimated: with 5 ns rise time and typical TSOP II lead inductance, setup/hold margins shrink by ~0.5 ns due to package parasitics. Add source-series termination (22-33 Ω) on CLK if reflections appear on the far-end waveform. For high-fanout designs driving multiple SDRAMs, use a clock buffer to limit loading.
Informations de conformité
RoHS compliant per DigiKey product listing. Not AEC-Q100 qualified - this is a commercial-grade SDRAM intended for consumer and industrial equipment; automotive applications should use AEC-Q100 qualified parts or implement additional screening.
