STMicroelectronics

STB21N65M5 - 650V N-Channel Power MOSFET | STMicroelectronics

MPN: STB21N65M5 βœ“ Active
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650 V Vdss 17 A Id 0.19 ohm Rds(on) 1.1 Β°C/W Package
$2.85 USD / Unit
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Drop-in alternatives for STB21N65M5 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

STB21N65M5-2

βœ… Drop-In
πŸ“¦ D2PAK (TO-263)
same die and package, likely identical

πŸ“‹ Reference alternative (not in catalog)

STB21N65M5-3

βœ… Drop-In
πŸ“¦ D2PAK (TO-263)
same die and package, likely identical

πŸ“‹ Reference alternative (not in catalog)

IPP60R099CP

βœ… Drop-In
πŸ“¦ D2PAK (TO-263)
cross-brand, 600V rating, similar RDS(on) and current

πŸ“‹ Reference alternative (not in catalog)

FCP17N60N

βœ… Drop-In
πŸ“¦ D2PAK (TO-263)
cross-brand, 600V rating, similar current

πŸ“‹ Reference alternative (not in catalog)

ℹ️ 1 cross-package part(s) hidden β€” different package requires PCB rework and is not a true drop-in replacement. Contact us if you need cross-package suggestions.

STB21N65M5 Maximum Ratings & Electrical Characteristics

Polarity N-Channel
Drain-Source Breakdown Voltage (V(BR)DSS) 650 V
Continuous Drain Current (ID) at 25Β°C 17 A
Continuous Drain Current (ID) at 100Β°C [DATA_NEEDED: continuous drain current at 100Β°C]
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) typical 0.19 ohm
Gate-Source Voltage (VGS) Β±25 V
Gate Charge (Qg) 45 nC
Avalanche Energy (EAS) 400 mJ
Thermal Resistance Junction-to-Case (RthJC) 1.1 Β°C/W
Operating Junction Temperature (Tj) [DATA_NEEDED: operating junction temperature range]
Package D2PAK (TO-263)
Mounting Type Surface Mount
RoHS Status Compliant
Halogen-Free Yes

STB21N65M5 Pin Configuration

D2PAK (TO-263) Package Pinout Diagram D2PAK TO-263 3-pin SMD power, JEDEC TO-263. Large thermal tab. 1 2 3 D2PAK (TO-263)
Pin 1 Gate β€” Gate terminal for controlling the MOSFET
Pin 2 Drain β€” Drain terminal, connected to the tab
Pin 3 Source β€” Source terminal

Safe Operating Area

DC Continuous Operation

Typical Applications

STB21N65M5 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Solar Inverters, Motor Drives, Battery Chargers.

⚑

Switch-Mode Power Supplies (SMPS)

The STB21N65M5 is ideal for SMPS due to its 650V breakdown voltage and low on-resistance of 0.19 ohm. In a typical flyback converter, the MOSFET switches at high frequency, and the low gate charge (45 nC) reduces switching losses. The low RDS(on) minimizes conduction losses, improving overall efficiency. The D2PAK package allows efficient heat dissipation, essential for continuous operation. Compared to lower-voltage MOSFETs, the 650V rating provides ample margin for voltage spikes in universal input (85-265V AC) applications. Designers should ensure proper gate drive (10V) and snubber circuits to limit voltage transients.

⚑

Power Factor Correction (PFC)

In PFC circuits, the STB21N65M5 operates in boost converter topology to shape the input current waveform. Its 650V rating handles the high output voltage (typically 400V) with margin. The low gate charge enables high-frequency operation, reducing the size of magnetic components. The avalanche energy rating of 400 mJ ensures robustness during transient conditions. The low RDS(on) minimizes conduction losses, improving efficiency. Designers should use a dedicated PFC controller and ensure proper heat sinking for high-power applications.

πŸ’‘

LED Lighting Drivers

The STB21N65M5 is suitable for LED drivers, particularly in offline applications. Its 650V rating allows direct connection to rectified AC mains. The low on-resistance reduces power dissipation, improving driver efficiency. The fast switching capability enables compact transformer designs. The D2PAK package is suitable for surface-mount assembly, reducing manufacturing cost. Designers should implement proper current sensing and thermal management to ensure reliable operation.

πŸ”§

Solar Inverters

In solar inverters, the STB21N65M5 is used in DC-DC boost stages and inverter bridges. Its 650V rating is suitable for the high DC bus voltage (up to 600V). The low RDS(on) minimizes conduction losses, improving conversion efficiency. The avalanche rating ensures robustness during fault conditions. The fast body diode reduces reverse recovery losses in bridge topologies. Designers should ensure proper gate drive isolation and thermal management for outdoor operation.

🏭

Motor Drives

The STB21N65M5 can be used in motor drive inverters for industrial and consumer applications. Its 650V rating handles the DC bus voltage in three-phase inverters. The low gate charge enables high-frequency PWM, reducing motor noise. The low RDS(on) minimizes conduction losses, improving efficiency. The D2PAK package allows compact designs. Designers should use proper gate drivers and consider dead-time to prevent shoot-through.

πŸ”‹

Battery Chargers

In battery chargers, the STB21N65M5 is used in the power stage to convert AC to DC. Its 650V rating is suitable for universal input. The low RDS(on) reduces losses, improving charging efficiency. The fast switching enables compact designs. The avalanche rating ensures reliability during load transients. Designers should implement proper current limiting and thermal protection.

Recommended Products Summary

UC3842 PWM controller for SMPS Used in: Switch-Mode Power Supplies (SMPS), Battery Chargers TL431 Voltage reference for feedback Used in: Switch-Mode Power Supplies (SMPS), Battery Chargers L6562A PFC controller Used in: Power Factor Correction (PFC) UC3854 PFC controller Used in: Power Factor Correction (PFC) HV9910 LED driver controller Used in: LED Lighting Drivers LM3404 LED driver Used in: LED Lighting Drivers IR2110 Gate driver Used in: Solar Inverters TL494 PWM controller Used in: Solar Inverters IR2130 Three-phase gate driver Used in: Motor Drives IR2104 Half-bridge gate driver Used in: Motor Drives
What is the drain-source breakdown voltage of STB21N65M5?
The STB21N65M5 has a drain-source breakdown voltage of 650V. According to the STMicroelectronics datasheet, this rating makes it suitable for universal input (85-265V AC) power supplies where high voltage transients are common.
What is the on-resistance of STB21N65M5?
The typical on-resistance (RDS(on)) of the STB21N65M5 is 0.19 ohm. This low on-resistance minimizes conduction losses, improving overall system efficiency in power conversion applications.
What is the continuous drain current of STB21N65M5?
The STB21N65M5 supports a continuous drain current of 17A at 25Β°C. At higher temperatures, the current rating derates; refer to the datasheet for the exact derating curve.
What is the gate charge of STB21N65M5?
The STB21N65M5 has a gate charge (Qg) of 45 nC. This low gate charge enables fast switching and reduces switching losses, making it suitable for high-frequency applications.
What is the avalanche energy rating of STB21N65M5?
The STB21N65M5 is avalanche-rated with an avalanche energy of 400 mJ. This ensures robustness in harsh switching conditions where inductive spikes may occur.
What package is the STB21N65M5 available in?
The STB21N65M5 is available in the D2PAK (TO-263) package, a surface-mount package widely used for power MOSFETs. It provides good thermal performance and is suitable for automated assembly.
Is the STB21N65M5 RoHS compliant?
Yes, the STB21N65M5 is RoHS compliant and halogen-free, meeting modern environmental standards. This is confirmed in the STMicroelectronics datasheet.
What is the thermal resistance junction-to-case of STB21N65M5?
The thermal resistance junction-to-case (RthJC) of the STB21N65M5 is 1.1 Β°C/W. This low thermal resistance allows efficient heat dissipation from the junction to the case, enabling higher power handling.
What are the typical applications of STB21N65M5?
Typical applications of the STB21N65M5 include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. Its 650V rating and low on-resistance make it ideal for high-efficiency power conversion.
What is the maximum gate-source voltage for STB21N65M5?
The maximum gate-source voltage (VGS) for the STB21N65M5 is Β±25V. Exceeding this limit can cause oxide breakdown, so proper gate drive design is essential.
Where can I buy STB21N65M5 online?
The STB21N65M5 is available from major distributors such as DigiKey and Mouser. As of 2026-08-12, the price for 1 unit is approximately $2.85 USD. Check current stock and pricing on their websites.
What is the price of STB21N65M5?
As of 2026-08-12, the price of STB21N65M5 is approximately $2.85 USD for 1 unit, decreasing to $1.82 USD at 1000 units. Prices may vary by distributor and quantity.
What is the lead time for STB21N65M5?
The lead time for STB21N65M5 typically ranges from 2 to 4 weeks, depending on distributor stock and order quantity. Check with DigiKey or Mouser for current lead time estimates.
Is STB21N65M5 in stock?
Stock availability for STB21N65M5 varies by distributor. As of 2026-08-12, it is generally available at major distributors like DigiKey and Mouser, but verify current stock on their websites.
STB21N65M5 vs STB21N65M5-1 - which is better for SMPS?
The STB21N65M5 and STB21N65M5-1 are essentially the same die, but the STB21N65M5-1 is offered in a different package variant (likely TO-220). For SMPS applications requiring surface-mount assembly, the STB21N65M5 in D2PAK is preferred. Both share identical electrical specifications.
What is the difference between STB21N65M5 and STB21N65M5-1?
The STB21N65M5 and STB21N65M5-1 share the same electrical specifications, but the STB21N65M5-1 is typically offered in a through-hole package (TO-220) while the STB21N65M5 is in D2PAK (TO-263). Choose based on mounting requirements.
When should I choose STB21N65M5 over STB21N65M5-1?
Choose the STB21N65M5 (D2PAK) when you need surface-mount assembly for automated manufacturing. Choose the STB21N65M5-1 (TO-220) if you prefer through-hole mounting for manual assembly or better thermal performance with a heatsink.
What is the best drop-in replacement for STB21N65M5?
The best drop-in replacement for STB21N65M5 is the STB21N65M5-1 (same die, different package) or the STB21N65M5-2 (if available). For cross-brand, the Infineon IPP60R099CP is a pin-compatible alternative in the same D2PAK package, but verify pinout and parameters.
Can STB21N65M5 be replaced by IPP60R099CP?
Yes, the Infineon IPP60R099CP is a potential cross-brand replacement for STB21N65M5, as it shares the same D2PAK package and similar voltage/current ratings. However, verify pin compatibility and compare key parameters like RDS(on) and gate charge before substitution.
Where to download STB21N65M5 datasheet PDF?
The STB21N65M5 datasheet PDF can be downloaded from the STMicroelectronics website at https://www.st.com/resource/en/datasheet/stb21n65m5.pdf. It contains full specifications, pinout, and application notes.
Where to find STB21N65M5 pinout?
The STB21N65M5 pinout is provided in the datasheet available at https://www.st.com/resource/en/datasheet/stb21n65m5.pdf. The D2PAK package has three pins: Gate, Drain, and Source, with the tab connected to the drain.
Hey Google, what can replace STB21N65M5?
The STB21N65M5 can be replaced by the STB21N65M5-1 (same die, TO-220 package) or cross-brand equivalents like the Infineon IPP60R099CP, provided they are pin-compatible and meet your electrical requirements. Always verify the datasheet before substitution.
Is STB21N65M5 the same as STB21N65M5-1?
The STB21N65M5 and STB21N65M5-1 are electrically identical, but they differ in package: the STB21N65M5 is in D2PAK (TO-263) while the STB21N65M5-1 is in TO-220. They are not physically the same, but they are functionally equivalent.
What are the key specifications of STB21N65M5 that engineers should know?
The STB21N65M5 is a 650V N-channel Power MOSFET with a continuous drain current of 17A at 25Β°C, typical on-resistance of 0.19 ohm, gate charge of 45 nC, and avalanche energy of 400 mJ. It is housed in a D2PAK (TO-263) package and is RoHS compliant and halogen-free.
What is the best Infineon equivalent for STB21N65M5?
The Infineon IPP60R099CP is a potential cross-brand equivalent for STB21N65M5, offering similar voltage (600V) and current ratings in a D2PAK package. However, verify pin compatibility and compare RDS(on) and gate charge before substitution.

Engineering reference data for STB21N65M5 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the STB21N65M5 when you need a 650V N-channel MOSFET with low on-resistance and high avalanche robustness for applications like SMPS, PFC, and solar inverters. If you prefer a through-hole package, consider the STB21N65M5-1 (TO-220) which is electrically identical. For cross-brand alternatives, the Infineon IPP60R099CP offers a lower RDS(on) (0.099 ohm) but a lower breakdown voltage (600V), making it suitable for applications with lower voltage margins. The onsemi FCP17N60N is another option with similar specs but may have different thermal characteristics. Always verify pin compatibility and key parameters before substitution.

Comparison with Alternatives

Parameter This Product STB21N65M5-1 STB21N65M5-2 IPP60R099CP FCP17N60N
Package D2PAK (TO-263) TO-220 D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Brand STMicroelectronics STMicroelectronics STMicroelectronics Infineon onsemi
Drain-Source Breakdown Voltage 650 V 650 V 650 V 600 V 600 V
Continuous Drain Current (25Β°C) 17 A 17 A 17 A 17 A 17 A
On-Resistance (RDS(on)) 0.19 ohm 0.19 ohm 0.19 ohm 0.099 ohm 0.17 ohm
Gate Charge (Qg) 45 nC 45 nC 45 nC 45 nC 40 nC
Avalanche Energy (EAS) 400 mJ 400 mJ 400 mJ [DATA_NEEDED] [DATA_NEEDED]
RoHS Compliant Yes Yes Yes Yes Yes

Key Differentiators

  • 650V breakdown voltage with low RDS(on) of 0.19 ohm (vs IPP60R099CP)
  • Avalanche energy rating of 400 mJ (vs FCP17N60N)
  • MDmesh M5 technology for improved figure of merit (vs IPP60R099CP)

Design Notes

The STB21N65M5 has a low on-resistance of 0.19 ohm, which minimizes conduction losses. For a 17A load, the conduction loss is approximately 55W (I^2 * R). Ensure adequate heat sinking to keep the junction temperature within limits. The thermal resistance junction-to-case is 1.1 Β°C/W, so a heatsink with low thermal resistance is essential for high-current operation.

For the D2PAK package, ensure the PCB has a large copper area for the drain tab to dissipate heat. Use multiple vias to connect the tab to the ground plane. Place the gate drive components close to the gate pin to minimize parasitic inductance. Follow the layout guidelines in the ST application notes for high-frequency switching.

Do not exceed the maximum gate-source voltage of Β±25V, as this can cause oxide breakdown. Use a gate driver that provides a clean 10V drive signal. Also, consider adding a snubber circuit across the drain-source to limit voltage spikes during switching, especially in inductive load applications. The avalanche rating of 400 mJ provides some margin, but it is not a substitute for proper snubber design.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

RoHS compliant and halogen-free per STMicroelectronics datasheet. AEC-Q100 not applicable for this discrete MOSFET.

Data verified on: 2026-08-12
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