TJ60S06M3L - P-Ch 60V 60A 11.2mΩ U-MOSVI MOSFET | Toshiba
Référence : TJ60S06M3L ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.85 | $8,50 |
| 100 | $0.72 | $72,00 |
| 500 | $0.61 | $305,00 |
| 1 000 | $0.54 | $540,00 |
TJ60S06M3L Présentation
A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor used for switching and amplifying signals in power electronics. P-channel MOSFETs specifically conduct when a negative gate-source voltage is applied, making them ideal for high-side switching where one terminal sits at the load supply. The TJ60S06M3L belongs to the U-MOSVI generation, which Toshiba's datasheet describes as offering low on-resistance, low leakage, and a -3.0 V enhancement-mode threshold for low-voltage gate drive compatibility.
Key electrical characteristics include RDS(ON) of 11.2 mΩ (typ.) at VGS = -10 V, a low drain leakage IDSS of -10 µA (max) at VDS = -40 V, and an enhancement-mode threshold Vth of -3.0 V measured at VDS = -1 mA. The 7760 pF typical input capacitance (consistent with the Mouser datasheet snippet) reflects a die optimized for low gate charge rather than ultra-fast switching. The DPAK+ package provides a tab that acts as the drain connection and the primary thermal path, supporting sustained 60 A operation with proper heatsinking.
Architecturally, this part uses Toshiba's U-MOSVI trench cell structure, which reduces cell pitch to lower on-resistance per unit area while keeping the Miller plateau modest. The result is a P-channel die that competes with similarly rated N-channel parts in 60 V class, but in a package commonly chosen for high-side load switching. The automotive-grade LJ suffix (AEC-Q101 qualified) is also available, designated TJ60S06M3L,LXHQ.
Typical applications include high-side load switches in automotive ECUs, motor driver H-bridges, DC-DC converter high-side switches, and switching voltage regulators. Its low RDS(ON) reduces conduction loss in continuous-current paths such as reverse-battery protection circuits. Design considerations include keeping the gate-source loop area small to minimize ringing at turn-on, and ensuring the source-pin PCB copper area is sufficient to carry the full 60 A without excessive voltage drop.
Alternatives de remplacement direct pour TJ60S06M3L — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec TJ60S06M3L (même facteur de forme et même empreinte) — différant par Input Capacitance (Ciss), Package, Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
TJ60S06M3L,LXHQ
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
TJ60S06M3L(T6L1,NQ
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
TJ60S06M3L
✅ Remplacement direct✓ En stock
$0.54 / unité
Voir la fiche technique →Toshiba 60V P-ch DPAK+ family equivalents
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
TJ60S06M3L Valeurs maximales et caractéristiques électriques
| Polarity | P-Channel |
| Technology | U-MOSVI (Trench MOSFET) |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -60 A (Tc) |
| Power Dissipation (PD) | 100 W (Tc) |
| On-State Resistance (RDS(on)) | 11.2 mΩ (typ.) at VGS = -10 V |
| Gate-Source Threshold Voltage (Vth) | -3.0 V (typ.) at VDS = -1 mA |
| Drain Leakage Current (IDSS) | -10 µA (max) at VDS = -40 V |
| Input Capacitance (Ciss) | 7760 pF (typ.) |
| Boîtier | DPAK+ (TO-252-3 surface-mount) |
| Type de montage | Surface Mount |
| Lead-Free / RoHS | RoHS compliant |
| Automotive Grade | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) |
| Manufacturer | Toshiba Electronic Devices & Storage |
| Cell Technology | Trench (enhancement mode) |
Configuration des broches de TJ60S06M3L
| Broche 1 | Gate — Gate control input; drive to -10 V for full enhancement |
| Broche 2 | Drain (or Source depending on datasheet convention) — Drain/output terminal (verify with Toshiba datasheet for DPAK+ pin assignment) |
| Broche 3 | Source (or Drain) — Source/input terminal (verify with Toshiba datasheet) |
| Broche Tab | Drain — Tab acts as the drain terminal and thermal pad; must be soldered for heatsinking |
Zone de fonctionnement sûr (TJ60S06M3L)
Applications typiques
TJ60S06M3L convient pour 6 applications: Automotive High-Side Load Switch, Motor Driver H-Bridge / Reverse-Battery Protection, DC-DC Converter High-Side Switch, Switching Voltage Regulator, Power OR-ing / Redundant Power Path, Battery Management / Reverse Polarity Protection.
Automotive High-Side Load Switch
The TJ60S06M3L's P-channel configuration and -60A continuous drain current make it ideal for automotive high-side switching where the source pin sits at the battery rail and the drain connects to the load. With RDS(on) of 11.2 mΩ at VGS = -10 V, conduction loss is minimized for sustained loads such as headlamp drivers, seat heaters, or body control modules. The AEC-Q101 qualified LJ variant (TJ60S06M3L,LXHQ) ensures reliability across automotive temperature ranges. The DPAK+ tab provides a low-thermal-resistance heatsink interface.
Recommandé
Motor Driver H-Bridge / Reverse-Battery Protection
In H-bridge motor driver topologies and reverse-battery protection circuits, the TJ60S06M3L serves as the high-side P-channel switch whose source connects to the battery and drain feeds the motor or downstream load. The -3.0 V gate threshold enables direct drive from 5 V microcontrollers with a simple gate resistor, eliminating the need for a charge pump. The 100 W power dissipation capability supports sustained motor stall currents with proper heatsinking.
Recommandé
DC-DC Converter High-Side Switch
The TJ60S06M3L is well-suited as the high-side P-channel switch in buck and buck-boost converters where the input rail must be switched to the LC filter. The 11.2 mΩ RDS(on) limits conduction loss across the converter, while the -60 V drain-source rating provides ample margin for 12 V and 24 V input rails with inductive transients. The 7760 pF input capacitance trades switching speed for lower gate charge, enabling efficient operation at switching frequencies of 100 kHz to 1 MHz.
Recommandé
Switching Voltage Regulator
In discrete switching regulator implementations, the TJ60S06M3L functions as the main switching element on the high-side rail. Its low RDS(on) reduces I²R losses that would otherwise degrade regulator efficiency at high output currents, while the enhancement-mode -3.0 V threshold allows simple gate drive from common logic-level controller outputs. The AEC-Q101 grade enables direct deployment in automotive power supply modules.
Recommandé
Power OR-ing / Redundant Power Path
The TJ60S06M3L can implement power OR-ing between two supply sources in redundant power systems, where its -60 V rating and 60 A current handling cover telecom, server, and industrial 24 V battery-backed rails. The P-channel orientation permits source-side common-cathode connection with minimal drive complexity. The Toshiba U-MOSVI process ensures low leakage when reverse-biased, preventing cross-conduction between sources.
Recommandé
Battery Management / Reverse Polarity Protection
Placed between the battery positive terminal and downstream electronics, the TJ60S06M3L provides reverse-polarity and over-current protection by turning off when the gate is pulled low. The low RDS(on) ensures minimal voltage drop during normal operation, preserving battery runtime in 12 V and 24 V systems. The 60 V VDS rating comfortably covers load-dump transients in automotive environments when supplemented with a TVS clamp.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour TJ60S06M3L — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | TJ60S06M3L,LXHQ | TJ60S06M3L(T6L1,NQ | Toshiba 60V P-ch DPAK+ family equivalents |
|---|---|---|---|---|
| Brand | Toshiba | Toshiba | Toshiba | Toshiba |
| Package | DPAK+ (TO-252-3) | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V | -60 V | -60 V |
| Continuous Drain Current (ID) | -60 A | -60 A | -60 A | -60 A |
| On-State Resistance RDS(on) | 11.2 mΩ (typ.) at VGS = -10 V | 11.2 mΩ | 11.2 mΩ | 11.2 mΩ (typ.) |
| Gate Threshold Voltage (Vth) | -3.0 V | -3.0 V | -3.0 V | -3.0 V |
| Automotive Grade (AEC-Q101) | No (standard base part) | Yes (AEC-Q101 qualified) | No (standard) | Varies by suffix |
| Power Dissipation (Tc) | 100 W | 100 W | 100 W | 100 W |
| Input Capacitance (Ciss) | 7760 pF (typ.) | 7760 pF | 7760 pF | 7760 pF |
Principaux différenciateurs
- P-channel high-side switching eliminates charge pump / bootstrap (vs N-channel 60V MOSFETs in DPAK)
- Automotive-grade AEC-Q101 option available in same package (vs Industrial-only P-channel 60V MOSFETs)
- U-MOSVI process delivers 11.2 mΩ in DPAK+ (vs Older planar P-channel MOSFETs in DPAK)
Notes de conception
Estimated: at 60 A continuous drain current and RDS(on) of 11.2 mΩ, conduction loss is approximately 60² × 0.0112 = 40.3 W. With a DPAK+ thermal resistance of approximately 1.5 C/W (RθJC) and the tab bonded to a minimum 1 square inch of copper on a 2 oz PCB, total RθJA may be around 25-35 C/W. Junction temperature rise would be roughly 40.3 W × 30 C/W ≈ 1209 C above ambient, confirming that a dedicated heatsink or substantial copper thermal management is essential for continuous full-current operation. For pulsed loads at typical duty cycles of 20-50%, the part will operate within thermal limits with PCB-only cooling.
P-channel MOSFETs are particularly sensitive to gate-source ringing because the source is not at a fixed potential. Minimize gate-source loop inductance by routing the gate drive trace directly over a solid ground or return plane. Keep the gate resistor (typically 10-100 Ω) close to the gate pin. The DPAK+ tab must be soldered to a continuous copper pour that serves both as the drain connection and the primary thermal path.
Do not assume the RDS(on) value listed in the headline specifications is achievable at all VGS levels - the TJ60S06M3L's datasheet curves show RDS(on) rising sharply as VGS approaches the -3.0 V threshold. For 5 V or 3.3 V logic-level gate drive, ensure the controller can pull the gate to at least -6 V to -8 V relative to source. Also be aware that the 4.8 mΩ figure mentioned in one excerpt reflects a higher VGS or pulsed condition; trust the typical 11.2 mΩ at -10 V for conservative thermal design.
Informations de conformité
RoHS compliant per Toshiba product page. AEC-Q101 qualified for LJ suffix variant (TJ60S06M3L,LXHQ); base part is not automotive-qualified.
