W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond
Référence : W25H02JVTBIM ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.85 | $38,50 |
| 100 | $3.42 | $342,00 |
| 500 | $3.05 | $1 525,00 |
| 1 000 | $2.71 | $2 710,00 |
| 5 000 | $2.38 | $11 900,00 |
W25H02JVTBIM Présentation
Background: A NOR Flash memory is a non-volatile storage technology that retains data without power and supports random access (execute-in-place / XIP), making it ideal for code storage and boot media. The QSPI NOR category, to which the W25H family belongs, uses a 4-wire SPI interface that effectively quadruples throughput versus legacy SPI. Within the memory hierarchy, QSPI NOR sits between SRAM (volatile, fast) and NAND Flash (non-volatile, block-oriented, slower random access), serving as fast boot ROM and parameter storage in embedded systems.
Key features of the W25H02JVTBIM include uniform 4 KB sector erase, JEDEC standard manufacturer (0xEF) and device ID, hardware and software write protection, individual block and chip erase capability, and a continuous program/erase endurance of 100,000 cycles per sector. The device includes a 256-byte Security Register with OTP lockable bits for unique device identification and parameter storage, and supports single 2.7V-3.6V operation for direct connection to 3.3V MCUs.
Architecture: Built on Winbond's proprietary NOR cell technology, the W25H02JVTBIM pairs a 32-bit shift register with an integrated command controller to manage page program (up to 256 bytes per page), sector/block/chip erase, and status register polling. The DTR mode samples data on both clock edges, doubling effective throughput at the same SCK frequency. The package pinout exposes /CS, SCK, IO0-IO3, /WP, /HOLD, VCC, and GND, enabling direct connection to modern MCU QSPI controllers.
Typical applications: the W25H02JVTBIM is well suited to network router firmware storage, IoT gateway boot and data logging, set-top box / smart TV boot media, industrial HMI panel image storage, and automotive infotainment reference code where execute-in-place is required. Its 2 Gb density supports full firmware images plus room for OTA staging and asset storage.
Design consideration: For systems upgrading from legacy SPI flash, verify that the host MCU's QSPI controller supports DTR mode to realize the full 50 MB/s throughput; otherwise the part still works in single-bit SPI mode. Ensure decoupling caps are placed as close as possible to VCC and GND, and follow Winbond's recommended PCB pad pattern for the 24-ball TFBGA.
Alternatives de remplacement direct pour W25H02JVTBIM — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec W25H02JVTBIM (même facteur de forme et même empreinte) — différant par Interface, Memory Type, Operating Temperature, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
W25Q02JVTBIM
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W25H02JVTBAM
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W25Q02JVTBAM
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W25Q02JVTBIQ
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT25QL02GCBB8E12-0AUT
✅ Remplacement direct✓ En stock
$7.65 / unité
Voir la fiche technique →W25H02JVTBIM Valeurs maximales et caractéristiques électriques
| Density | 2 Gbit (256M x 8) |
| Type de mémoire | Serial NOR Flash |
| Interface | SPI / Dual SPI / Quad SPI / QPI / DTR |
| Maximum Clock Rate | 133 MHz |
| Equivalent Throughput (Quad DTR) | 416 MHz (50 MB/s) |
| Access Time | 7.5 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V |
| Sector Size | 4 KB uniform |
| Block Size | 32 KB and 64 KB |
| Program/Erase Endurance | 100,000 cycles per sector |
| Data Retention | 20 years |
| Boîtier | 24-ball TFBGA (8x6 mm) |
| Température de fonctionnement | -40C to +85C |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
| JEDEC Manufacturer ID | 0xEF (Winbond) |
Configuration des broches de W25H02JVTBIM
| Broche A1 | /CS — Chip Select (active low) |
| Broche A2 | DO (IO1) — Serial Data Out / IO1 in Quad SPI mode |
| Broche A3 | /WP (IO2) — Write Protect (active low) / IO2 in Quad SPI mode |
| Broche A4 | VCC — Power supply (2.7V to 3.6V) |
| Broche A5 | GND — Ground |
| Broche A6 | /HOLD (IO3) — Hold (active low) / IO3 in Quad SPI mode |
| Broche B1 | SCK — Serial Clock |
| Broche B2 | DI (IO0) — Serial Data In / IO0 in Quad SPI mode |
| Broche B3 | NC — Not connected (per datasheet) |
| Broche B4 | VCC — Power supply |
| Broche B5 | GND — Ground |
| Broche B6 | NC — Not connected (per datasheet) |
| Broche C1 | GND — Ground |
| Broche C2 | NC — Not connected (per datasheet) |
| Broche C3 | NC — Not connected (per datasheet) |
| Broche C4 | VCC — Power supply |
| Broche C5 | GND — Ground |
| Broche C6 | GND — Ground |
| Broche D1 | NC — Not connected (per datasheet) |
| Broche D2 | NC — Not connected (per datasheet) |
| Broche D3 | GND — Ground |
| Broche D4 | NC — Not connected (per datasheet) |
| Broche D5 | NC — Not connected (per datasheet) |
| Broche D6 | GND — Ground |
Applications typiques
W25H02JVTBIM convient pour 6 applications: Networking Router Firmware Storage, IoT Gateway Boot and Asset Storage, Set-Top Box and Smart TV Boot Media, Industrial HMI Panel Image Storage, Automotive Infotainment Reference Code, Data Logger and Edge Sensor Storage.
Networking Router Firmware Storage
The W25H02JVTBIM's 2 Gbit density (256 MB) is ideal for networking routers running Linux or NetBSD, providing ample space for bootloader, kernel, rootfs, and persistent configuration. The 133 MHz DTR Quad SPI throughput (equivalent to 50 MB/s) keeps boot time under 1.5 seconds for a full firmware image, while execute-in-place (XIP) support lets the SoC run code directly from flash. Sector erase granularity of 4 KB matches typical UBI/JFFS2 partition schemes, simplifying OTA upgrade workflows. Designers typically pair this part with a quad-SPI-capable SoC such as a MediaTek MT7621 or Qualcomm IPQ series.
Recommandé
IoT Gateway Boot and Asset Storage
IoT gateways require reliable non-volatile storage for bootloader, application firmware, and configuration assets. The W25H02JVTBIM's 2 Gbit density supports dual-image OTA staging (active + backup) plus space for sensor calibration data and asset metadata. Its 100,000 program/erase cycles per sector and 20-year data retention suit long-life IoT deployments in industrial and outdoor settings. With Quad SPI throughput of 50 MB/s, OTA image writes complete in seconds, minimizing gateway downtime during firmware updates.
Recommandé
Set-Top Box and Smart TV Boot Media
Set-top boxes and smart TVs boot from NOR Flash to load the secure bootloader, kernel, and rootfs. The W25H02JVTBIM provides 256 MB of fast XIP storage with 50 MB/s DTR Quad SPI throughput, reducing cold-boot time and improving user experience. The 4 KB uniform sector erase enables fine-grained OTA updates of bootloader regions without disturbing the main image. Hardware write-protect (/WP) and HOLD (/HOLD) pins allow external pull-up configuration for safe field updates.
Recommandé
Industrial HMI Panel Image Storage
Industrial human-machine interface (HMI) panels store GUI bitmaps, fonts, and configuration in NOR Flash. The W25H02JVTBIM's industrial temperature range (-40C to +85C) and 2 Gbit density comfortably hold multilingual UI assets, historical alarm logs, and parameter sets. The single 3.3V supply simplifies interface to industrial-grade ARM SoCs without level shifters. Endurance of 100,000 cycles per sector supports frequent GUI updates in long-life factory deployments.
Recommandé
Automotive Infotainment Reference Code
The W25H02JVTBIM stores reference code and audio/video asset metadata for entry-level automotive infotainment head units. Its Quad SPI bandwidth supports fast boot of lightweight Linux systems within automotive cold-start budgets (<3 seconds). While not AEC-Q100 qualified itself, the part's industrial temperature range and Winbond's track record make it a common choice for non-safety-critical display and audio subsystems. Verify with Winbond for AEC-Q100 grade requirements where applicable.
Recommandé
Data Logger and Edge Sensor Storage
Edge data loggers in remote or battery-powered applications need non-volatile storage with predictable low-latency writes. The W25H02JVTBIM's 256-byte page program granularity, sector erase capability, and 100,000-cycle endurance suit long-term logging of sensor telemetry. The 2 Gbit density stores weeks of buffered data before network upload, and Quad SPI throughput enables rapid burst logging during transient events. Single 3.3V operation simplifies power tree design in battery-driven sensor nodes.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour W25H02JVTBIM — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | W25Q02JVTBIM | W25H02JVTBAM | W25Q02JVTBAM | W25Q02JVTBIQ | MT25QL02GCBB8E12 |
|---|---|---|---|---|---|---|
| Brand | Winbond | Winbond | Winbond | Winbond | Winbond | Micron Technology |
| Package | 24-TFBGA (8x6) | 24-TFBGA (8x6) - same | 24-TFBGA (8x6) - same | 24-TFBGA (8x6) - same | 24-TFBGA (8x6) - same | 24-TFBGA (8x6) - same |
| Density | 2 Gbit (256M x 8) | 2 Gbit | 2 Gbit | 2 Gbit | 2 Gbit | 2 Gbit |
| Maximum Clock Rate | 133 MHz DTR | 133 MHz DTR | 133 MHz DTR | 133 MHz DTR | 133 MHz DTR | 108 MHz SDR / 54 MHz DDR |
| Supply Voltage | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V |
| Program/Erase Endurance | 100,000 cycles/sector | 100,000 cycles/sector | 100,000 cycles/sector | 100,000 cycles/sector | 100,000 cycles/sector | 100,000 cycles/sector |
| Sector Size | 4 KB uniform | 4 KB uniform | 4 KB uniform | 4 KB uniform | 4 KB uniform | 4 KB uniform |
Principaux différenciateurs
- 133 MHz DTR Quad SPI throughput (50 MB/s) (vs MT25QL02GCBB8E12)
- 2 Gbit density in compact 24-TFBGA (8x6 mm) (vs MT25QL02GCBB8E12)
- Identical silicon to W25Q02JVTBIM (vs W25Q02JVTBIM)
Notes de conception
Use a 4-layer PCB with a dedicated ground plane for the TFBGA land pattern. Place a 0.1 uF decoupling capacitor within 3 mm of the VCC balls and a 4.7 uF bulk cap on the same supply trace. Per Winbond layout guidance, vias in the TFBGA land pads should be tented or filled-and-capped to prevent solder wicking during reflow.
Keep SCK, IO0, IO1, IO2, IO3 traces matched within 50 mil of each other and route them over a continuous ground plane to minimize crosstalk. For DTR operation at 133 MHz, characteristic impedance should be 50 ohms single-ended. Series termination of 22-33 ohms on SCK near the host MCU may be needed for board traces longer than 50 mm.
Do not assume that Quad SPI peripherals from different MCU vendors use identical command sequences; verify SFDP (JEDEC JESD216) compliance. The W25H02JVTBIM supports standard read commands (0x03, 0x0B, 0x3B, 0x6B, 0xBB, 0xEB) plus DTR variants; some legacy MCUs do not issue DTR commands and will fall back to single-bit SPI mode automatically. Always perform a power-on read of JEDEC ID (0x9F) before issuing application commands to confirm the part is responsive.
Active read current is approximately 25 mA at 133 MHz DTR and standby current is 15 uA typical. For battery-powered designs, leverage the Deep Power-Down (0xB9) command to reduce VCC current to ~1 uA when the host MCU is in sleep mode. Ensure VCC ramp-up time meets the datasheet requirement of <30 ms to avoid indeterminate power-on reset behavior.
Informations de conformité
RoHS compliant per Winbond product page. All Winbond Flash products are Halogen-Free and RoHS compliant. 'G' in 13th character denotes renewable-energy manufacturing (e.g., W25H02JVTBIMG vs W25H02JVTBIM); specs are identical.
