W9864G6JH-6 - 64Mb SDRAM 4Mx16 166MHz TSOP-54 | Winbond
Référence : W9864G6JH6 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.55 | $15,50 |
| 100 | $1.18 | $118,00 |
| 500 | $0.95 | $475,00 |
| 1 000 | $0.78 | $780,00 |
| 3 000 | $0.59 | $1 770,00 |
W9864G6JH6 Présentation
An SDRAM (Synchronous Dynamic Random Access Memory) is a class of volatile DRAM that synchronizes all timing with the system clock, replacing older asynchronous DRAM and enabling pipelined burst operations. It sits in the memory hierarchy between cache and mass storage, offering higher density than SRAM at lower cost, and is a member of the broader semiconductor memory family that includes SRAM, NOR flash, and NAND flash. SDRAM parts are organized as banks, rows, and columns; commands (RAS, CAS, READ, WRITE, PRECHARGE, REFRESH) are latched on the rising clock edge.
Key features of the W9864G6JH-6 include programmable CAS latency of 2 or 3, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh power-down modes, LVTTL-compatible I/O, and LVCMOS-compatible address/command inputs. The TSOP-II 54-pin, 0.4-inch-wide, 0.65 mm-pitch package is the industry-standard JEDEC footprint for x16 SDRAM, allowing PCB reuse across densities and vendors. Power dissipation is low because the device enters self-refresh during idle periods and supports a power-down mode that disables the clock when no operation is in progress.
Architecturally, the W9864G6JH-6 uses four internal banks that allow concurrent row activation while another bank is being read or written, effectively doubling the throughput compared with single-bank DRAM of similar speed grade. The -6 speed suffix indicates a 166 MHz CAS-3 grade, which the Winbond datasheet specifies as 5 ns tRAC / 5 ns tAC / 2 ns tOH. The LVCMOS/LVTTL interface is fully compliant with 3.3 V logic levels used by PCI, MPEG, and embedded MCU/ASIC hosts.
Typical applications include set-top box video buffers, set-top box MPEG transport stream buffers, networking line cards, industrial controllers, printers, and any embedded system that needs a low-density, low-cost synchronous DRAM. In modern designs the part is most often chosen for legacy or cost-sensitive platforms that have not yet migrated to DDR/DDR2/LPDDR. When designing with the W9864G6JH-6, place a 0.1 uF decoupling capacitor close to each VDD pin and provide a 22 ohm series resistor on the clock line to damp overshoot; respect the JEDEC refresh interval of 15.6 us at 0-70 C to retain data.
Alternatives de remplacement direct pour W9864G6JH6 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
W9864G6JH-6I
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W9864G6KH-6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W9812G6JH-6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W9864G2JH-6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AS4C4M16S1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IS42S16400F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W9864G6JH6 Valeurs maximales et caractéristiques électriques
| Type de mémoire | Synchronous DRAM (SDRAM) |
| Density | 64 Mbit (4M x 16) |
| Organisation de la mémoire | 1M word x 4 banks x 16 bits |
| Operating Voltage | 3.0 V to 3.6 V |
| Clock Frequency (Max) | 166 MHz |
| Access Time | 5 ns |
| Data Bandwidth | Up to 200 M words/sec |
| Number of Banks | 4 |
| Type d'interface | Parallel LVTTL/LVCMOS |
| Latence CAS | Programmable 2 or 3 |
| Burst Length | 1, 2, 4, 8 or full page |
| Refresh Interval | 15.6 us (commercial) |
| Operating Temperature (Commercial) | 0 C to +70 C |
| Operating Temperature (Industrial -6I) | -40 C to +85 C |
| Boîtier | 54-pin TSOP-II, 0.65 mm pitch |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
Configuration des broches de W9864G6JH6
| Broche 1 | VDD — Power supply (3.3V) |
| Broche 2 | DQ0 — Data I/O line 0 |
| Broche 3 | DQ1 — Data I/O line 1 |
| Broche 4 | DQ2 — Data I/O line 2 |
| Broche 5 | DQ3 — Data I/O line 3 |
| Broche 6 | VDD — Power supply (3.3V) |
| Broche 7 | DQ4 — Data I/O line 4 |
| Broche 8 | DQ5 — Data I/O line 5 |
| Broche 9 | DQ6 — Data I/O line 6 |
| Broche 10 | DQ7 — Data I/O line 7 |
| Broche 11 | DQ16 — NC - not connected (per datasheet) |
| Broche 12 | VSS — Ground |
| Broche 13 | DQ17 — NC - not connected (per datasheet) |
| Broche 14 | DQ8 — Data I/O line 8 |
| Broche 15 | DQ9 — Data I/O line 9 |
| Broche 16 | DQ10 — Data I/O line 10 |
| Broche 17 | DQ11 — Data I/O line 11 |
| Broche 18 | VSS — Ground |
| Broche 19 | DQ12 — Data I/O line 12 |
| Broche 20 | DQ13 — Data I/O line 13 |
| Broche 21 | DQ14 — Data I/O line 14 |
| Broche 22 | DQ15 — Data I/O line 15 |
| Broche 23 | VDD — Power supply (3.3V) |
| Broche 24 | VSS — Ground |
| Broche 25 | DQML — Lower byte data mask (DQ0-DQ7) |
| Broche 26 | DQMH — Upper byte data mask (DQ8-DQ15) |
| Broche 27 | WE — Write enable (active low) |
| Broche 28 | CAS — Column address strobe (active low) |
| Broche 29 | RAS — Row address strobe (active low) |
| Broche 30 | CS — Chip select (active low) |
| Broche 31 | A11 — Address input 11 |
| Broche 32 | A10 — Address input 10 |
| Broche 33 | A0 — Address input 0 |
| Broche 34 | A1 — Address input 1 |
| Broche 35 | A2 — Address input 2 |
| Broche 36 | A3 — Address input 3 |
| Broche 37 | VDD — Power supply (3.3V) |
| Broche 38 | VSS — Ground |
| Broche 39 | A4 — Address input 4 |
| Broche 40 | A5 — Address input 5 |
| Broche 41 | A6 — Address input 6 |
| Broche 42 | A7 — Address input 7 |
| Broche 43 | A8 — Address input 8 |
| Broche 44 | A9 — Address input 9 |
| Broche 45 | BA0 — Bank select address 0 |
| Broche 46 | BA1 — Bank select address 1 |
| Broche 47 | CKE — Clock enable |
| Broche 48 | CLK — System clock input |
| Broche 49 | UDQM — Upper data mask (alias DQMH) |
| Broche 50 | NC — Not connected (per datasheet) |
| Broche 51 | NC — Not connected (per datasheet) |
| Broche 52 | LDQM — Lower data mask (alias DQML) |
| Broche 53 | NC — Not connected (per datasheet) |
| Broche 54 | VSS — Ground |
Applications typiques
W9864G6JH6 convient pour 6 applications: Set-Top Box MPEG Buffer, Networking Line Card Memory, Industrial Control Panel, Laser Printer Page Buffer, Embedded Multimedia Player, Legacy POS Terminal.
Set-Top Box MPEG Buffer
The W9864G6JH-6 is well-suited for set-top box MPEG transport stream buffering, where its 64 Mbit density provides adequate headroom for de-multiplexing, decoding, and re-multiplexing operations. The 4-bank architecture enables simultaneous read/write of compressed video frames while maintaining reference buffers for the decoder. The 166 MHz clock rate delivers a peak bandwidth of approximately 200 M words/sec on the 16-bit data bus, which comfortably handles multi-stream HD bitrates. The 3.3 V LVTTL interface integrates directly with typical STB MPEG decoder ASICs that lack DDR controllers. The TSOP-II footprint simplifies PCB layout in space-constrained chassis, and Winbond's long product history in the consumer STB market ensures mature driver and firmware support.
Recommandé
Networking Line Card Memory
In networking line cards and access switches, the W9864G6JH-6 serves as packet buffer memory for low-to-mid port count systems. The 64 Mbit capacity buffers several thousand Ethernet frames, which is sufficient for edge routers and small switches operating at gigabit rates. The 4-bank x16 organization allows one bank to receive packets while another bank empties to the CPU, providing natural flow-control buffering. The 5 ns access time at 166 MHz keeps latency low for cut-through forwarding designs. The industrial -6I variant operates from -40 C to +85 C, supporting outdoor cabinet installations. Compared with SSRAM, SDRAM provides higher density at lower cost per bit, which is critical when port count drives BOM.
Recommandé
Industrial Control Panel
Industrial control panels benefit from the W9864G6JH-6 as scratch RAM for HMI display buffers, runtime data logs, and protocol stacks. The wide operating temperature range of the -6I variant (-40 C to +85 C) handles factory floor conditions including enclosed cabinets near motors or heaters. The 64 Mbit density easily holds bitmap framebuffers for QVGA/WVGA displays plus application variables. The mature 3.3 V SDRAM interface is supported by most industrial MCU families, including NXP, Microchip PIC32, and Renesas RX, simplifying firmware migration. Self-refresh mode keeps idle power low, important for energy-conscious installations.
Recommandé
Laser Printer Page Buffer
The W9864G6JH-6 functions as a page buffer in laser printers and multifunction devices, where it holds rasterized page data before transfer to the print engine. The 16-bit data bus allows fast parallel writes from the printer controller during rasterization, while reads deliver band data to the laser driver at print-engine rates. At 166 MHz the device easily keeps pace with 30+ ppm print engines. The 4-bank architecture supports concurrent rasterization and engine read-out without contention. The TSOP-II 54-pin package fits within the compact printer controller board where DDR parts would not be cost-effective.
Recommandé
Embedded Multimedia Player
Embedded multimedia players and portable DVD/Media players use the W9864G6JH-6 to buffer decoded audio/video frames. The 64 Mbit capacity holds several seconds of compressed audio or one full video frame buffer plus reference frames. The 4-bank organization allows simultaneous read of decoded frames and write of incoming compressed data. The low standby current via self-refresh extends battery life in portable form factors. The TSOP-II package is thin enough to fit into slim player chassis. The commercial temperature grade is acceptable for indoor consumer products.
Recommandé
Legacy POS Terminal
Point-of-sale (POS) terminals and electronic cash registers often use the W9864G6JH-6 as main memory for transaction logging and display buffers. The 64 Mbit density is sufficient to hold thousands of transaction records, vendor databases, and signature capture data. The 3.3 V SDRAM interface matches the embedded CPUs used in legacy POS designs, avoiding the need for level shifters. The TSOP-II 54-pin package is widely supported by long-life embedded CPU SKUs. Industrial temperature variants allow POS terminals to operate in semi-outdoor environments such as restaurant patios and gas station kiosks.
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Récapitulatif des produits recommandés
Données de référence d'ingénierie pour W9864G6JH6 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | W9864G6JH-6I | W9864G6KH-6 | W9812G6JH-6 | AS4C4M16S1 | IS42S16400F |
|---|---|---|---|---|---|---|
| Brand | Winbond | Winbond | Winbond | Winbond | Alliance Memory | ISSI |
| Package | 54-TSOP II | 54-TSOP II | 54-TSOP II | 54-TSOP II | 54-TSOP II | 54-TSOP II |
| Density | 64 Mb | 64 Mb | 64 Mb | 128 Mb | 64 Mb | 64 Mb |
| Organization | 4M x 16 | 4M x 16 | 4M x 16 | 8M x 16 | 4M x 16 | 4M x 16 |
| Clock Frequency (Max) | 166 MHz | 166 MHz | 166 MHz | 166 MHz | 166 MHz | 166 MHz |
| Operating Voltage | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V |
| Operating Temperature | 0 C to +70 C | -40 C to +85 C | 0 C to +70 C | 0 C to +70 C | 0 C to +70 C | -40 C to +85 C |
| Number of Banks | 4 | 4 | 4 | 4 | 4 | 4 |
| Lifecycle Status | Obsolete (EOL) | Active (limited) | Active | Active | Active | Active |
Principaux différenciateurs
- JEDEC-standard TSOP-II 54-pin footprint (vs AS4C4M16S1)
- 64 Mb density at low cost (vs W9812G6JH-6)
- Industrial temperature variant available (vs IS42S16400F)
Notes de conception
Provide separate 3.3 V analog and digital supplies if your system also powers analog circuits from the same rail. Place a 0.1 uF decoupling capacitor close to every VDD pin and a 22 ohm series termination resistor on the CLK line to damp overshoot. The W9864G6JH-6 draws peak current during ACTIVE-PRECHARGE bursts; ensure the regulator can supply at least 200 mA peak per device.
Use matched-impedance (50 ohm) traces for CLK, control signals (RAS, CAS, WE, CS), and address/data lines to prevent ringing on a 54-pin TSOP-II layout. Keep trace lengths matched within 0.5 inch for all command/address signals to the SDRAM. Provide a continuous ground plane under the SDRAM and route VDD in a power plane to minimize supply bounce. For best results, follow the JEDEC TSOP-II SDRAM layout guideline.
Do not leave the CKE pin floating; tie it to a controlled GPIO so the device can enter self-refresh. Honor the JEDEC refresh interval of 15.6 us at commercial temperature and 7.8 us at industrial temperature, otherwise stored data will be corrupted. After power-up, follow the documented initialization sequence (PRECHARGE -> AUTO REFRESH x2 -> MODE REGISTER SET) before any read/write command.
Informations de conformité
RoHS compliant per FindIC and Jotrin listings. Not AEC-Q100 qualified; industrial -6I variant offers extended temperature range but is not automotive-qualified.
