MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MPN: MT40A512M16TB-062E ✓ פעילMT40A512M16TB-062E סקירה
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and laptops, offering higher bandwidth and lower power consumption than previous generations. DDR4 operates at lower voltages (1.2V) and includes features like on-die termination (ODT) and write leveling to improve signal integrity at high speeds.
Key features include a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C. The device supports auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, and ZQ calibration. It operates over a temperature range of 0°C to +95°C for the standard version, with an industrial temperature range (-40°C to +95°C) available in the IT variant.
The MT40A512M16TB-062E uses Micron's advanced DRAM process technology, offering high density and reliability. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8 mm. The device is designed for high-speed operation with low power consumption, making it suitable for a wide range of computing and embedded applications.
Typical applications include servers, data centers, networking equipment, and high-performance computing systems. Its 8Gb density and x16 organization make it ideal for memory modules (DIMMs) and embedded systems requiring high capacity and bandwidth. The device is also used in industrial and automotive applications where reliability and temperature range are critical.
When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The ZQ pin requires a 240-ohm resistor to ground for calibration. Follow the DDR4 layout guidelines for signal integrity, including controlled impedance traces and proper termination.
חלופות תחליף ישיר עבור MT40A512M16TB-062E — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם MT40A512M16TB-062E (אותו גורם צורה וטביעת רגל) — שונים ב Package, Data Rate, CAS Latency, Supply Voltage, Operating Temperature.
MT40A512M16TB-062E:R
צור קשר לקבלת מחיר
הצג גיליון נתונים ←MT40A512M16LY-062E
צור קשר לקבלת מחיר
הצג גיליון נתונים ←K4A8G165WC-BCWE
צור קשר לקבלת מחיר
הצג גיליון נתונים ←AS4C512M16D4B-62BCNTR
צור קשר לקבלת מחיר
הצג גיליון נתונים ←MT40A512M16TB-062E IT:R
📋 חלופה להתייחסות (לא בקטלוג)
MT40A512M16TD-062E:R
📋 חלופה להתייחסות (לא בקטלוג)
MT40A512M16TB-062E דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR4 SDRAM |
| גודל זיכרון | 8 Gbit |
| ארגון | 512M x 16 |
| קצב נתונים | 1600 MHz (DDR4-3200) |
| Supply Voltage - VDD/VDDQ | 1.2V ±60mV |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV |
| tRCD | 19 ns |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| טווח טמפרטורת פעולה | 0°C to +95°C (standard), -40°C to +95°C (IT) |
| מארז | 96-FBGA (7.5x13 mm) |
| סוג הרכבה | Surface Mount |
| ממשק | Parallel |
| תכונות | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| סטטוס RoHS | Compliant |
| REACH Status | Compliant |
תצורת פינים של MT40A512M16TB-062E
| פין A1 | VDD — Power supply |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | VSS — Ground |
| פין B1 | VDDQ — Power supply for I/O |
| פין B2 | DQ1 — Data input/output 1 |
| פין B3 | VSSQ — Ground for I/O |
| פין C1 | VPP — Word line power supply |
| פין C2 | DQ2 — Data input/output 2 |
| פין C3 | VSS — Ground |
| פין D1 | VDD — Power supply |
| פין D2 | DQ3 — Data input/output 3 |
| פין D3 | VSSQ — Ground for I/O |
יישומים טיפוסיים
MT40A512M16TB-062E מתאים עבור 6 יישוםs: Server Memory Modules, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Automotive Infotainment.
Server Memory Modules
The MT40A512M16TB-062E is ideal for server DIMMs, providing high density and bandwidth. Its 8Gb capacity and 1600 MHz data rate enable 32GB RDIMMs with 25.6 GB/s per channel. The low 1.2V supply reduces power consumption in data centers, and the temperature-compensated refresh ensures reliability in high-temperature environments.
מומלץ
Networking Equipment
In routers and switches, the MT40A512M16TB-062E provides fast packet buffering and forwarding tables. Its high bandwidth and low latency (tRCD 19 ns) support line-rate processing. The 96-FBGA package allows compact board designs, and the industrial temperature variant supports outdoor and harsh environments.
מומלץ
High-Performance Computing
For HPC systems, the MT40A512M16TB-062E delivers the memory bandwidth needed for scientific simulations and AI workloads. Its 1600 MHz data rate and 8Gb density enable large memory pools. The device's on-die termination and write leveling improve signal integrity at high speeds, ensuring reliable operation in multi-rank configurations.
מומלץ
Embedded Systems
The MT40A512M16TB-062E is suitable for embedded applications like industrial PCs and medical devices. Its 8Gb density in a small FBGA package saves board space. The wide temperature range (0°C to +95°C) and low power consumption make it ideal for fanless designs. The device supports auto self-refresh for low-power standby modes.
מומלץ
Data Center Storage
In storage controllers and NVMe SSDs, the MT40A512M16TB-062E provides caching and metadata storage. Its high bandwidth accelerates data access, and the low latency improves IOPS. The device's CRC and on-die ECC features enhance data integrity, critical for storage applications. The 1.2V supply reduces power in large storage arrays.
מומלץ
Automotive Infotainment
The MT40A512M16TB-062E supports automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. The industrial temperature variant (-40°C to +95°C) meets automotive requirements. Its low power consumption is beneficial for battery-powered vehicles, and the small package fits space-constrained head units.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור MT40A512M16TB-062E — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | MT40A512M16TB-062E | MT40A512M16TB-062E IT | MT40A512M16LY-062E | K4A8G165WC-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | R: 96-FBGA (7.5x13) - same | R: 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same |
| Brand | Micron Technology | R: Micron Technology | R: Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 8 Gbit | R: 8 Gbit | R: 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | R: 512M x 16 | R: 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 1600 MHz | R: 1600 MHz | R: 1600 MHz | 1600 MHz | 1600 MHz |
| Supply Voltage | 1.2V | R: 1.2V | R: 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | R: 0°C to +95°C | R: -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| tRCD | 19 ns | R: 19 ns | R: 19 ns | 19 ns | 19 ns |
מבדילים עיקריים
- Higher density per package (לעומתK4A8G165WC-BCWE)
- Industrial temperature option (לעומתMT40A512M16TB-062E)
- Proven reliability (לעומתAS4C512M16D4B-62BCN)
הערות תכנון
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the PCB layout follows DDR4 routing guidelines: controlled impedance (typically 40-50 ohms for single-ended, 80-100 ohms for differential), matched trace lengths, and proper termination.
The MT40A512M16TB-062E dissipates heat based on operating frequency and load. For high-temperature environments, ensure adequate airflow or heatsinking. The refresh rate automatically adjusts with temperature (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C), but exceeding the maximum temperature may cause data loss.
For high-speed operation at 1600 MHz, use on-die termination (ODT) settings as recommended in the datasheet. Implement write leveling and read/write training to compensate for skew. Keep the DQ, DQS, and address/command traces length-matched to within 0.5 mm to ensure reliable data capture.
מידע על תאימות
RoHS and REACH compliant per distributor listings. AEC-Q100 not applicable for DRAM.
