MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MPN： MT40A512M16TB-062E ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $76.57 | $76.57 |
| 10 | $72.5 | $725.00 |
| 100 | $68 | $6,800.00 |
| 500 | $64 | $32,000.00 |
| 1,000 | $60 | $60,000.00 |
MT40A512M16TB-062E 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and laptops, offering higher bandwidth and lower power consumption than previous generations. DDR4 operates at lower voltages (1.2V) and includes features like on-die termination (ODT) and write leveling to improve signal integrity at high speeds.
Key features include a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C. The device supports auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, and ZQ calibration. It operates over a temperature range of 0°C to +95°C for the standard version, with an industrial temperature range (-40°C to +95°C) available in the IT variant.
The MT40A512M16TB-062E uses Micron's advanced DRAM process technology, offering high density and reliability. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8 mm. The device is designed for high-speed operation with low power consumption, making it suitable for a wide range of computing and embedded applications.
Typical applications include servers, data centers, networking equipment, and high-performance computing systems. Its 8Gb density and x16 organization make it ideal for memory modules (DIMMs) and embedded systems requiring high capacity and bandwidth. The device is also used in industrial and automotive applications where reliability and temperature range are critical.
When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The ZQ pin requires a 240-ohm resistor to ground for calibration. Follow the DDR4 layout guidelines for signal integrity, including controlled impedance traces and proper termination.
直接替換替代品，適用於 MT40A512M16TB-062E — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MT40A512M16TB-062E （相同外形與佔位） — 差異在於 Package, Data Rate, CAS Latency, Supply Voltage, Operating Temperature.
快速比較工具 — 選擇替代零件進行並排比較：
MT40A512M16TB-062E:R
✓ 有庫存
$60 / 單位
查看資料表 →MT40A512M16LY-062E
✓ 有庫存
$6.65 / 單位
查看資料表 →K4A8G165WC-BCWE
✗ 缺貨
$38 / 單位
查看資料表 →AS4C512M16D4B-62BCNTR
聯絡詢價
查看資料表 →MT40A512M16TB-062E IT:R
📋 參考替代品（不在目錄中）
MT40A512M16TD-062E:R
📋 參考替代品（不在目錄中）
MT40A512M16TB-062E 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit |
| 組織 | 512M x 16 |
| 資料速率 | 1600 MHz (DDR4-3200) |
| Supply Voltage - VDD/VDDQ | 1.2V ±60mV |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV |
| tRCD | 19 ns |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| 工作溫度範圍 | 0°C to +95°C (standard), -40°C to +95°C (IT) |
| 封裝 | 96-FBGA (7.5x13 mm) |
| 安裝類型 | Surface Mount |
| 介面 | Parallel |
| 功能特色 | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| RoHS 狀態 | Compliant |
| REACH Status | Compliant |
MT40A512M16TB-062E 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | VSS — Ground |
| 腳位 B1 | VDDQ — Power supply for I/O |
| 腳位 B2 | DQ1 — Data input/output 1 |
| 腳位 B3 | VSSQ — Ground for I/O |
| 腳位 C1 | VPP — Word line power supply |
| 腳位 C2 | DQ2 — Data input/output 2 |
| 腳位 C3 | VSS — Ground |
| 腳位 D1 | VDD — Power supply |
| 腳位 D2 | DQ3 — Data input/output 3 |
| 腳位 D3 | VSSQ — Ground for I/O |
典型應用
MT40A512M16TB-062E 適用於 6 應用s: Server Memory Modules, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Automotive Infotainment.
Server Memory Modules
The MT40A512M16TB-062E is ideal for server DIMMs, providing high density and bandwidth. Its 8Gb capacity and 1600 MHz data rate enable 32GB RDIMMs with 25.6 GB/s per channel. The low 1.2V supply reduces power consumption in data centers, and the temperature-compensated refresh ensures reliability in high-temperature environments.
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Networking Equipment
In routers and switches, the MT40A512M16TB-062E provides fast packet buffering and forwarding tables. Its high bandwidth and low latency (tRCD 19 ns) support line-rate processing. The 96-FBGA package allows compact board designs, and the industrial temperature variant supports outdoor and harsh environments.
推薦
High-Performance Computing
For HPC systems, the MT40A512M16TB-062E delivers the memory bandwidth needed for scientific simulations and AI workloads. Its 1600 MHz data rate and 8Gb density enable large memory pools. The device's on-die termination and write leveling improve signal integrity at high speeds, ensuring reliable operation in multi-rank configurations.
推薦
Embedded Systems
The MT40A512M16TB-062E is suitable for embedded applications like industrial PCs and medical devices. Its 8Gb density in a small FBGA package saves board space. The wide temperature range (0°C to +95°C) and low power consumption make it ideal for fanless designs. The device supports auto self-refresh for low-power standby modes.
推薦
Data Center Storage
In storage controllers and NVMe SSDs, the MT40A512M16TB-062E provides caching and metadata storage. Its high bandwidth accelerates data access, and the low latency improves IOPS. The device's CRC and on-die ECC features enhance data integrity, critical for storage applications. The 1.2V supply reduces power in large storage arrays.
推薦
Automotive Infotainment
The MT40A512M16TB-062E supports automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. The industrial temperature variant (-40°C to +95°C) meets automotive requirements. Its low power consumption is beneficial for battery-powered vehicles, and the small package fits space-constrained head units.
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推薦產品摘要
工程參考資料，適用於 MT40A512M16TB-062E — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MT40A512M16TB-062E | MT40A512M16TB-062E IT | MT40A512M16LY-062E | K4A8G165WC-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | R: 96-FBGA (7.5x13) - same | R: 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same |
| Brand | Micron Technology | R: Micron Technology | R: Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 8 Gbit | R: 8 Gbit | R: 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | R: 512M x 16 | R: 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 1600 MHz | R: 1600 MHz | R: 1600 MHz | 1600 MHz | 1600 MHz |
| Supply Voltage | 1.2V | R: 1.2V | R: 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | R: 0°C to +95°C | R: -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| tRCD | 19 ns | R: 19 ns | R: 19 ns | 19 ns | 19 ns |
主要差異化特點
- Higher density per package (對比K4A8G165WC-BCWE)
- Industrial temperature option (對比MT40A512M16TB-062E)
- Proven reliability (對比AS4C512M16D4B-62BCN)
設計說明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the PCB layout follows DDR4 routing guidelines: controlled impedance (typically 40-50 ohms for single-ended, 80-100 ohms for differential), matched trace lengths, and proper termination.
The MT40A512M16TB-062E dissipates heat based on operating frequency and load. For high-temperature environments, ensure adequate airflow or heatsinking. The refresh rate automatically adjusts with temperature (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C), but exceeding the maximum temperature may cause data loss.
For high-speed operation at 1600 MHz, use on-die termination (ODT) settings as recommended in the datasheet. Implement write leveling and read/write training to compensate for skew. Keep the DQ, DQS, and address/command traces length-matched to within 0.5 mm to ensure reliable data capture.
合規資訊
RoHS and REACH compliant per distributor listings. AEC-Q100 not applicable for DRAM.
