MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MPN: MT40A512M16TB-062E ✓ نشطMT40A512M16TB-062E نظرة عامة
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and laptops, offering higher bandwidth and lower power consumption than previous generations. DDR4 operates at lower voltages (1.2V) and includes features like on-die termination (ODT) and write leveling to improve signal integrity at high speeds.
Key features include a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C. The device supports auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, and ZQ calibration. It operates over a temperature range of 0°C to +95°C for the standard version, with an industrial temperature range (-40°C to +95°C) available in the IT variant.
The MT40A512M16TB-062E uses Micron's advanced DRAM process technology, offering high density and reliability. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8 mm. The device is designed for high-speed operation with low power consumption, making it suitable for a wide range of computing and embedded applications.
Typical applications include servers, data centers, networking equipment, and high-performance computing systems. Its 8Gb density and x16 organization make it ideal for memory modules (DIMMs) and embedded systems requiring high capacity and bandwidth. The device is also used in industrial and automotive applications where reliability and temperature range are critical.
When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The ZQ pin requires a 240-ohm resistor to ground for calibration. Follow the DDR4 layout guidelines for signal integrity, including controlled impedance traces and proper termination.
بدائل مباشرة لـ MT40A512M16TB-062E — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع MT40A512M16TB-062E (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, CAS Latency, Supply Voltage, Operating Temperature.
MT40A512M16TB-062E:R
تواصل لمعرفة السعر
عرض ورقة البيانات ←MT40A512M16LY-062E
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G165WC-BCWE
تواصل لمعرفة السعر
عرض ورقة البيانات ←AS4C512M16D4B-62BCNTR
تواصل لمعرفة السعر
عرض ورقة البيانات ←MT40A512M16TB-062E IT:R
📋 بديل مرجعي (غير موجود في الكتالوج)
MT40A512M16TD-062E:R
📋 بديل مرجعي (غير موجود في الكتالوج)
MT40A512M16TB-062E الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| حجم الذاكرة | 8 Gbit |
| التنظيم | 512M x 16 |
| معدل البيانات | 1600 MHz (DDR4-3200) |
| Supply Voltage - VDD/VDDQ | 1.2V ±60mV |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV |
| tRCD | 19 ns |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| نطاق درجة حرارة التشغيل | 0°C to +95°C (standard), -40°C to +95°C (IT) |
| العلبة | 96-FBGA (7.5x13 mm) |
| نوع التركيب | Surface Mount |
| الواجهة | Parallel |
| الميزات | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| حالة RoHS | Compliant |
| REACH Status | Compliant |
تكوين أطراف MT40A512M16TB-062E
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | VSS — Ground |
| دبوس B1 | VDDQ — Power supply for I/O |
| دبوس B2 | DQ1 — Data input/output 1 |
| دبوس B3 | VSSQ — Ground for I/O |
| دبوس C1 | VPP — Word line power supply |
| دبوس C2 | DQ2 — Data input/output 2 |
| دبوس C3 | VSS — Ground |
| دبوس D1 | VDD — Power supply |
| دبوس D2 | DQ3 — Data input/output 3 |
| دبوس D3 | VSSQ — Ground for I/O |
التطبيقات النموذجية
MT40A512M16TB-062E مناسب لـ 6 التطبيقs: Server Memory Modules, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Automotive Infotainment.
Server Memory Modules
The MT40A512M16TB-062E is ideal for server DIMMs, providing high density and bandwidth. Its 8Gb capacity and 1600 MHz data rate enable 32GB RDIMMs with 25.6 GB/s per channel. The low 1.2V supply reduces power consumption in data centers, and the temperature-compensated refresh ensures reliability in high-temperature environments.
موصى به
Networking Equipment
In routers and switches, the MT40A512M16TB-062E provides fast packet buffering and forwarding tables. Its high bandwidth and low latency (tRCD 19 ns) support line-rate processing. The 96-FBGA package allows compact board designs, and the industrial temperature variant supports outdoor and harsh environments.
موصى به
High-Performance Computing
For HPC systems, the MT40A512M16TB-062E delivers the memory bandwidth needed for scientific simulations and AI workloads. Its 1600 MHz data rate and 8Gb density enable large memory pools. The device's on-die termination and write leveling improve signal integrity at high speeds, ensuring reliable operation in multi-rank configurations.
موصى به
Embedded Systems
The MT40A512M16TB-062E is suitable for embedded applications like industrial PCs and medical devices. Its 8Gb density in a small FBGA package saves board space. The wide temperature range (0°C to +95°C) and low power consumption make it ideal for fanless designs. The device supports auto self-refresh for low-power standby modes.
موصى به
Data Center Storage
In storage controllers and NVMe SSDs, the MT40A512M16TB-062E provides caching and metadata storage. Its high bandwidth accelerates data access, and the low latency improves IOPS. The device's CRC and on-die ECC features enhance data integrity, critical for storage applications. The 1.2V supply reduces power in large storage arrays.
موصى به
Automotive Infotainment
The MT40A512M16TB-062E supports automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. The industrial temperature variant (-40°C to +95°C) meets automotive requirements. Its low power consumption is beneficial for battery-powered vehicles, and the small package fits space-constrained head units.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ MT40A512M16TB-062E — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | MT40A512M16TB-062E | MT40A512M16TB-062E IT | MT40A512M16LY-062E | K4A8G165WC-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | R: 96-FBGA (7.5x13) - same | R: 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same |
| Brand | Micron Technology | R: Micron Technology | R: Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 8 Gbit | R: 8 Gbit | R: 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | R: 512M x 16 | R: 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 1600 MHz | R: 1600 MHz | R: 1600 MHz | 1600 MHz | 1600 MHz |
| Supply Voltage | 1.2V | R: 1.2V | R: 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | R: 0°C to +95°C | R: -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| tRCD | 19 ns | R: 19 ns | R: 19 ns | 19 ns | 19 ns |
أبرز الفروقات
- Higher density per package (مقابلK4A8G165WC-BCWE)
- Industrial temperature option (مقابلMT40A512M16TB-062E)
- Proven reliability (مقابلAS4C512M16D4B-62BCN)
ملاحظات التصميم
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the PCB layout follows DDR4 routing guidelines: controlled impedance (typically 40-50 ohms for single-ended, 80-100 ohms for differential), matched trace lengths, and proper termination.
The MT40A512M16TB-062E dissipates heat based on operating frequency and load. For high-temperature environments, ensure adequate airflow or heatsinking. The refresh rate automatically adjusts with temperature (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C), but exceeding the maximum temperature may cause data loss.
For high-speed operation at 1600 MHz, use on-die termination (ODT) settings as recommended in the datasheet. Implement write leveling and read/write training to compensate for skew. Keep the DQ, DQS, and address/command traces length-matched to within 0.5 mm to ensure reliable data capture.
معلومات الامتثال
RoHS and REACH compliant per distributor listings. AEC-Q100 not applicable for DRAM.
