1EDN7146GXTMA1 vs 2EDN7524GXTMA1 तुलना
विस्तृत दोनों ओर की तुलना 1EDN7146GXTMA1 द्वारा Infineon और 2EDN7524GXTMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | 1EDN7146GXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | Power MOSFET Drivers | Power MOSFET Drivers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Driver Type | High-side, single-channel | — |
| Number of Drivers | 1 | — |
| Logic Type | Non-Inverting | — |
| Input Type | TDI (Truly Differential Inductor) | — |
| Maximum Bootstrap Voltage (VB) | 200 V | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Source/Sink Drive Current | 500 mA / 500 mA | — |
| Gate Drive Voltage | Up to 11 V (typ) | — |
| Propagation Delay (typ) | 40 ns | — |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | — |
| UVLO (VCC) | Yes | — |
| UVLO (VB) | Yes | — |
| Bootstrap Diode | Integrated | — |
| ऑपरेटिंग तापमान | -40 C to +125 C | -40 C to +125 C |
| पैकेज | PG-VSON-10-4 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| RoHS स्थिति | Compliant | Compliant |
| MSL स्तर | 1 | [DATA_NEEDED: MSL level] |
| Product Type | — | Low-side gate driver IC |
| Number of Channels | — | 2 (dual) |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | — | -10 V to +20 V on logic pins |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| राइज़ टाइम | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| फॉल टाइम | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |