IMLT40R011M2HXTMA1 vs IMLT65R040M2HXTMA1 तुलना
विस्तृत दोनों ओर की तुलना IMLT40R011M2HXTMA1 द्वारा Infineon और IMLT65R040M2HXTMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IMLT40R011M2HXTMA1 - 400V 11mΩ SiC MOSFET CoolSiC G2 | Infineon
IMLT40R011M2HXTMA1 ✓ सक्रियInfineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IMLT40R011M2HXTMA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC MOSFET 400V G2 | CoolSiC™ G2 (2nd generation SiC trench) |
| ट्रांज़िस्टर प्रकार | N-Channel SiC MOSFET | — |
| Drain-Source Voltage (VDS) | 400 V | 650 V |
| Continuous Drain Current (ID, Tc) | 144 A | — |
| Power Dissipation (PD, Tc) | 429 W | — |
| On-State Resistance (RDS(on)) | 11 mΩ (typ) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (benchmark) | — |
| Recommended Gate Drive Voltage | 0 V to 18 V | — |
| Technology | Silicon Carbide (SiC) Gen-2 | Silicon Carbide (SiC) N-channel MOSFET |
| Body Diode | Commutation-robust fast body diode, low Qrr | — |
| Avalanche Rating | 100% avalanche tested | — |
| पैकेज | PG-HDSOP-16-8 (surface mount, top-side cooled) | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Interconnection Technology | XT (best-in-class thermal performance) | — |
| Operating Mode | Enhancement mode | — |
| Target Topologies | 2- and 3-level hard- and soft-switching | — |
| Target Applications | AI server PSU, SMPS, motor drives | — |
| RoHS स्थिति | Compliant | — |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| ऑपरेटिंग जंक्शन तापमान | — | -55 °C to +150 °C |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |