IMLT40R011M2HXTMA1 vs IMLT65R040M2HXTMA1 Perbandingan
Perbandingan bersamaan detil IMLT40R011M2HXTMA1 dari Infineon dan IMLT65R040M2HXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IMLT40R011M2HXTMA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC MOSFET 400V G2 | CoolSiC™ G2 (2nd generation SiC trench) |
| Tipe Transistor | N-Channel SiC MOSFET | — |
| Drain-Source Voltage (VDS) | 400 V | 650 V |
| Continuous Drain Current (ID, Tc) | 144 A | — |
| Power Dissipation (PD, Tc) | 429 W | — |
| On-State Resistance (RDS(on)) | 11 mΩ (typ) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (benchmark) | — |
| Recommended Gate Drive Voltage | 0 V to 18 V | — |
| Technology | Silicon Carbide (SiC) Gen-2 | Silicon Carbide (SiC) N-channel MOSFET |
| Body Diode | Commutation-robust fast body diode, low Qrr | — |
| Avalanche Rating | 100% avalanche tested | — |
| Paket | PG-HDSOP-16-8 (surface mount, top-side cooled) | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Interconnection Technology | XT (best-in-class thermal performance) | — |
| Operating Mode | Enhancement mode | — |
| Target Topologies | 2- and 3-level hard- and soft-switching | — |
| Target Applications | AI server PSU, SMPS, motor drives | — |
| Status RoHS | Compliant | — |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| Suhu Hubung Kerja | — | -55 °C to +150 °C |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |